Self-supporting metal tungsten film and preparation method and application thereof
A metal tungsten, self-supporting technology, applied in metal material coating process, cable/conductor manufacturing, ion implantation plating, etc., to achieve low cost, single composition, and avoid the effect of sacrificing the substrate
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[0039] The present application proposes a method for preparing a self-supporting metal tungsten film, which includes the following steps: depositing a tungsten film on the surface of a substrate by DC magnetron sputtering, and cooling to separate the tungsten film from the substrate.
[0040] DC magnetron sputtering conditions include: sputtering pressure > 0 and ≤ 1Pa, sputtering power 50-90W, sputtering time 1-4h, argon gas flow 20-40sccm, target base distance 5.5-6.5cm , the rotation speed of the substrate is 6-8r / min, and the temperature of the substrate is 200-600°C.
[0041] For reference, the sputtering gas pressure can be 0.1Pa, 0.2Pa, 0.3Pa, 0.4Pa, 0.5Pa, 0.6Pa, 0.7Pa, 0.8Pa, 0.9Pa or 1.0Pa, etc., or it can be >0 and ≤1Pa any other value.
[0042] The sputtering power can be 50W, 60W, 70W, 80W or 90W, etc., or any other value within the range of 50-90W.
[0043] The sputtering time can be 1h, 1.5h, 2h, 2.5h, 3h, 3.5h or 4h, etc., or any other value within the range ...
Embodiment 1
[0074] This embodiment provides a self-supporting metal tungsten film, the preparation process of which is as follows:
[0075] (1) Substrate cleaning and target installation: Firstly, the monocrystalline silicon substrate (length 50mm×width 50mm) polished on one side with (001) crystal plane was placed in anhydrous ethanol solution and deionized water in sequence for ultrasonic cleaning for 30 Minutes, after being dried in an oven at 70°C for 1.5 hours, put it on the magnetron sputtering substrate holder and fix it on the rotating sample stage in the equipment cavity. The metal tungsten target (purity 99.9%) is correctly installed on the magnetron sputtering DC power supply.
[0076] (2) Vacuumize and heat up: After the sample is fixed, close the chamber door and air valve, turn on the mechanical pump, open the flapper valve, wait for the air pressure to drop to 10Pa, turn on the molecular pump, and wait for the air pressure to drop to 5×10 -4 After Pa, set the temperature c...
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