Film electrode, preparation method and application thereof

A thin-film electrode and electrode layer technology, which is applied in cable/conductor manufacturing, equipment for manufacturing conductive/semiconductive layers, circuits, etc., can solve problems such as expensive equipment, poor shadow elimination effect, and low product yield, and achieve High production efficiency, high yield, good anti-aging effect

Pending Publication Date: 2021-12-17
湖南兴威新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above-mentioned process is not only expensive in equipment, but also has low product yield and production efficienc

Method used

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  • Film electrode, preparation method and application thereof
  • Film electrode, preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] Hydrolyze ethyl orthosilicate in ethanol to obtain silica sol. Divide the silica sol into two parts, of which the silica sol I is used to prepare insulating glue, and the silica sol II is used to dope metal ions.

[0050] S1 Dissolve polyimide in ethanol, add the silica sol I and dry at 50°C to obtain nano-insulation glue; wherein, the mass ratio of silica sol I and polyimide is 1:200. The nano metal silver wire is mixed with the nano insulating glue in butanol to obtain the nano metal wire ink. The mass ratio of nanometer metal silver wire, butanol and insulating glue is 1:100:5.

[0051] S2 Hydrolyze ethyl orthosilicate in water to obtain silica sol II, then add sodium chloride to silica sol II, and age at 180°C for 8 hours to obtain conductive ink; among them, ethyl orthosilicate, water, chloride The mass ratio of sodium and butanol is 1:5:1:200.

[0052] S3 laying the nano metal wire ink on the surface of the base layer by spraying;

[0053] S4 screen printing t...

Embodiment 2

[0057] Hydrolyze ethyl orthosilicate in ethanol to obtain silica sol. Divide the silica sol into two parts, of which the silica sol I is used to prepare insulating glue, and the silica sol II is used to dope metal ions.

[0058] S1 Dissolve polybenzoxazine in ethanol, add the silica sol I and dry at 50°C to obtain nano-insulation glue; wherein, the mass ratio of silica sol I to polyimide is 1:250. The nano metal gold wire and the nano insulating glue are mixed in butanol to obtain the nano metal wire ink. The mass ratio of nanometer metal silver wire, butanol and insulating glue is 1:150:8.

[0059] S2 Hydrolyze ethyl orthosilicate in water to obtain silica sol II, then add aluminum chloride to silica sol II, and age at 180°C for 12 hours to obtain conductive ink; among them, ethyl orthosilicate, water, chloride The mass ratio of aluminum and butanol is 1:20:5:400.

[0060] S3 laying the nano metal wire ink on the surface of the base layer by spraying;

[0061] S4 screen p...

Embodiment 3

[0065] Hydrolyze ethyl orthosilicate in ethanol to obtain silica sol. Divide the silica sol into two parts, of which the silica sol I is used to prepare insulating glue, and the silica sol II is used to dope metal ions.

[0066] S1 Dissolve polysiloxane in ethanol, add the silica sol I and dry at 50°C to obtain nano-insulation glue; wherein, the mass ratio of silica sol I to polyimide is 1:300. The nano metal copper wire and the nano insulating glue are mixed in butanol to obtain the nano metal wire ink. The mass ratio of nanometer metal silver wire, butanol and insulating glue is 1:200:20.

[0067] S2 Hydrolyze ethyl orthosilicate in water to obtain silica sol II, then dope copper chloride into silica sol II, and age at 180°C for 20 hours to obtain conductive ink; among them, ethyl orthosilicate, water, chloride The mass ratio of copper and butanol is 1:5:1:200.

[0068] S3 laying the nano metal wire ink on the surface of the base layer by spraying;

[0069] S4 screen pri...

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PUM

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Abstract

The invention provides a film electrode, which comprises a base layer, wherein an electrode layer is arranged on the surface of the base layer and is divided into a conductive area and an insulating area, nanometer metal wires are distributed in the electrode layer, the surfaces of the nanometer metal wires are coated with an insulating glue, and in the electrode layer corresponding to the conductive area, a gap between the nanometal wires is also filled with a nano silicon oxide doped with metal ions. The invention also provides a preparation method and application of the film electrode. The film electrode provided by the invention is simple in process, low in cost and good in conductive pattern shadow elimination effect. The preparation method of the film electrode provided by the invention is simple, high in production efficiency and high in yield. According to the invention, the appearance of the conductive area and the appearance of the non-conductive area in the film electrode are almost the same; and when the film electrode is applied to a touch screen and a display screen, the shadow eliminating effect is good, the anti-aging performance is good, the b value is low, and the display effect of the display screen can be improved.

Description

technical field [0001] The invention relates to a thin film electrode of nanometer metal wires, a preparation method and application thereof, and belongs to the field of thin film electrodes. Background technique [0002] Transparent conductive film (TCF for short), also known as transparent electrode, is widely used in touch screens, solar cells, liquid crystal tablets, electronic curtains, heating films, LED displays and other fields. Most of the metal wire conductive transparent electrodes prepared on the market first prepare a complete conductive transparent film, and then remove the areas that do not need to conduct electricity by laser etching or yellow photoetching, thereby leaving behind the conductive metal wire transparent film. Conductive pattern. The above-mentioned process is not only expensive in equipment, but also has low product yield and production efficiency, and at the same time, the shadow elimination effect between the circuit patterns on the prepared ...

Claims

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Application Information

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IPC IPC(8): H01B5/14H01B13/00G06F3/041G09F9/30H01L31/0224
CPCH01B5/14H01B13/0026H01B13/0016G06F3/041G09F9/30H01L31/022425
Inventor 邹翠张蓉王云周宇恒
Owner 湖南兴威新材料有限公司
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