Semiconductor integrated circuit and memory

Abstract

The embodiment of the invention relates to a semiconductor integrated circuit and a memory. The semiconductor integrated circuit comprises a first data line connected with a bit line through a column selection module, and a first complementary data line, a second data line and a reference data line which are connected with a complementary bit line through the column selection module, the reference data line is used for providing a reference signal; the semiconductor integrated circuit further includes: a local read-write conversion module which responds to a read-write control signal and transmits data between the first data line and the second data line and data between the first complementary data line and the second data line during read-write operation; and an amplification module which is used for receiving the data signal of the second data line and the reference signal and amplifying the data signal of the second data line, wherein the reference signal is used as a reference for amplifying the data signal of the second data line. According to the embodiment of the invention, the electrical performance of the semiconductor integrated circuit can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor integrated circuit and a memory. Background technique [0002] Dynamic Random Access Memory (Dynamic Random Access Memory, DRAM) is a semiconductor storage device commonly used in computers, and is composed of many repeated storage units. Each memory cell usually includes a capacitor and a transistor. The gate of the transistor is connected to the word line, the drain is connected to the bit line, and the source is connected to the capacitor. The voltage signal on the word line can control the opening or closing of the transistor, and then through the bit line Read the data information stored in the capacitor, or write the data information into the capacitor through the bit line for storage. [0003] DRAM can be divided into Double Data Rate (DDR) DRAM, GDDR (Graphics Double Data Rate) DRAM, and Low Power Double Data Rate (LPDDR) DRAM. As DRAM is applied ...

AI Technical Summary

Problems solved by technology

[0004] However, the read and write performance of current DRAM still needs to be improved.

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