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Three-dimensional trench gate charge storage type IGBT and manufacturing method thereof

A technology of charge storage and charge storage layer, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc. It can solve the problems of poor short-circuit safety working ability of IGBT, increase of device switching loss, and degradation of device breakdown voltage. Achieve the effects of eliminating adverse effects, reducing switching losses, and improving breakdown voltage and reliability

Pending Publication Date: 2021-12-24
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the charge storage layer can degrade the breakdown voltage of the device
For trench IGBTs, as the feature size of semiconductor devices becomes smaller and smaller, in order to improve the integration and current handling capacity of the chip, the distance between the trenches is continuously reduced. However, as the channel density increases, Large, the gate capacitance, especially the Miller capacitance, will increase significantly, reducing the switching speed of the device and increasing the switching loss of the device
In addition, a large channel density will also lead to an increase in the saturation current, making the short-circuit safe working ability of the IGBT worse.

Method used

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  • Three-dimensional trench gate charge storage type IGBT and manufacturing method thereof
  • Three-dimensional trench gate charge storage type IGBT and manufacturing method thereof
  • Three-dimensional trench gate charge storage type IGBT and manufacturing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0084] A three-dimensional trench gate charge storage type IGBT provided by the present invention defines the three-dimensional direction of the device with a three-dimensional Cartesian coordinate system: the direction from the N+ emitter region 3 to the gate electrode 71 of the device is defined as the X-axis direction, and the direction from the P The direction of the type collector region 10 pointing to the collector metal 11 is the Y-axis direction, and the direction perpendicular to the X-axis and Y-axis is the Z-axis direction;

[0085] Its semi-cellular structure and the cross-section along AB line, CD line, EF line and GH line are as follows figure 2 , image 3 , Figure 4 , Figure 5 and Figure 6 as shown,

[0086] It includes a collector metal 11, a P-type collector region 10, an N-type field stop layer 9, and an N-drift region 8 that are sequentially stacked from bottom to top along the Y-axis direction; a P-type buried layer 12 located above the N-drift regio...

Embodiment 2

[0091] A three-dimensional trench gate charge storage type IGBT provided in this embodiment defines the three-dimensional direction of the device in a three-dimensional Cartesian coordinate system: define the direction of the device from the N+ emitter region 3 to the gate electrode 71 as the X-axis direction, from The direction of the P-type collector region 10 pointing to the collector metal 11 is the Y-axis direction, and the direction perpendicular to the X-axis and Y-axis is the Z-axis direction;

[0092] Its semi-cellular structure and the section along the AB line, CD line, EF line, GH line and IJ line are as follows Figure 7 , Figure 8 , Figure 9 , Figure 10 , Figure 11 and Figure 12 as shown,

[0093] It includes a back collector metal 11, a P-type collector region 10, an N-type field stop layer 9, and an N-drift region 8 that are stacked sequentially from bottom to top along the Y-axis direction; Layer 12, the P-type buried layer 12 is discontinuous along...

Embodiment 3

[0098] A three-dimensional trench gate charge storage type IGBT provided by the present invention defines the three-dimensional direction of the device with a three-dimensional Cartesian coordinate system: the direction from the N+ emitter region 3 to the gate electrode 71 of the device is defined as the X-axis direction, and the direction from the P The direction of the type collector region 10 pointing to the collector metal 11 is the Y-axis direction, and the direction perpendicular to the X-axis and Y-axis is the Z-axis direction;

[0099] Its semi-cellular structure and the cross-section along AB line, CD line, EF line and GH line are as follows Figure 13 , Figure 14 , Figure 15 , Figure 16 and Figure 17 as shown,

[0100]Including back collector metal 11, P-type collector region 10, N-type field stop layer 9, N-drift region 8 stacked sequentially from bottom to top along the Y-axis direction; P-type buried layer located above N-drift region 8 12. The P-type bur...

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Abstract

The invention relates to a three-dimensional trench gate charge storage type IGBT and a manufacturing method thereof. According to the present invention, a P-type buried layer and a separated gate electrode equipotential with emitter metal are introduced on the basis of a traditional trench gate charge storage type IGBT, and the adverse effect of an N-type charge storage layer on the breakdown characteristic of a device is eliminated through charge compensation, so that the compromise relationship between the forward conduction voltage drop Vceon and the turn-off loss Eoff can be improved; due to the reduction of the channel density and the advanced saturation of an NMOS channel, the saturation current density of the device is reduced, and a short-circuit safe working area (SCSOA) of the device is improved; and meanwhile, the clamping of a PMOS can effectively reduce the gate capacitance and the gate charge, so that the switching speed of the device is improved, and the switching loss of the device and the requirement for the capability of a gate drive circuit are reduced. As the distance between the PMOS and NMOS channels is shortened, the clamping effect of the PMOS and the current uniformity in a chip can be improved, and a wider reverse bias safe working area (RBSOA) can be obtained.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and relates to an insulated gate bipolar transistor (IGBT), in particular to a three-dimensional trench gate charge storage type IGBT and a manufacturing method thereof. Background technique [0002] As a new generation of power electronic devices, insulated gate bipolar transistor (IGBT) combines the advantages of field effect transistor (MOSFET) and bipolar juncture transistor (BJT), and has the advantages of easy driving of MOSFET, low input impedance and fast switching speed. , and at the same time, it has the advantages of high on-state current density, low on-state voltage, low loss and good stability of BJT. Therefore, it is widely used in various fields of transportation, communication, household appliances and aerospace, and has become one of the core electronic components in modern power electronic circuits. The use of IGBT has greatly improved the performance of po...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/423H01L29/739H01L21/28H01L21/331
CPCH01L29/7398H01L29/7397H01L29/66348H01L29/0684H01L29/0623H01L29/401H01L29/42312H01L29/0696
Inventor 张金平朱镕镕陈子珣张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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