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Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device

A manufacturing method, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as unestablished manufacturing methods

Pending Publication Date: 2021-12-24
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] On the other hand, the technology of directly forming a nitride semiconductor layer on a diamond substrate by heteroepitaxial growth is still under study, and its manufacturing method has not yet been established.

Method used

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  • Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device
  • Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device
  • Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device

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Embodiment approach 1

[0039] figure 1 This is a cross-sectional view showing the configuration of the semiconductor substrate 100 manufactured by the semiconductor substrate manufacturing method according to Embodiment 1 of the present invention. figure 1 The semiconductor substrate 100 shown in has a nitride semiconductor layer 2 formed on a support substrate 10 having high thermal conductivity such as a diamond substrate, for example. The nitride semiconductor layer 2 is a semiconductor layer formed by heteroepitaxial growth on a growth substrate different from the support substrate 10 , and is transferred onto the support substrate 10 while maintaining the crystal plane during the heteroepitaxial growth. Therefore, a high-quality nitride semiconductor element can be formed on the nitride semiconductor layer 2 .

[0040] Next, for the method of manufacturing the semiconductor substrate 100, cross-sectional views sequentially showing the manufacturing steps, that is, are used. Figure 2 to Figur...

Embodiment approach 2

[0066] Figure 9 This is a cross-sectional view showing the configuration of a semiconductor device 200 manufactured by the method of manufacturing a semiconductor device according to Embodiment 2 of the present invention.

[0067] Figure 9 A semiconductor device 200 shown in , for example, includes a nitride semiconductor element 11 formed on a nitride semiconductor layer 2 formed on a support substrate 10 having high thermal conductivity such as a diamond substrate. Examples of the nitride semiconductor element 11 include a high electric field mobility transistor (HEMT) and the like. should be explained, Figure 9 It is a schematic diagram, and the drain, source, gate voltage, etc. of the HEMT provided on the nitride semiconductor layer 2 of the semiconductor substrate 100 are not shown in detail, as a configuration provided on the surface of the nitride semiconductor layer 2 , are generally shown as a block-shaped configuration.

[0068] The nitride semiconductor layer...

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Abstract

The present invention relates to a method for manufacturing a semiconductor substrate, comprising: a step (a) of preparing an epitaxial substrate having a nitride semiconductor layer formed on a first major surface of a growth substrate and a first support substrate, forming a resin adhesive layer between the first major surface of the growth substrate and a first major surface of the first support substrate, and bonding the epitaxial substrate to the first support substrate; a step (b) of reducing the thickness of a second major surface of the growth substrate after step (a); a step (c) of forming a first protective thin film layer on the second major surface of the thinned growth substrate to side surfaces of the resin adhesive layer after step (b); a step (d) of forming a second protective thin film layer on a second major surface of the first support substrate to the side surfaces of the resin adhesive layer after step (b); a step (e) of removing the thinned growth substrate after steps (c) and (d); a step (f) of bonding a second support substrate onto the nitride semiconductor layer after step (e); and a step (g) of removing the first support substrate and the resin adhesive layer after step (f).

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor substrate, and more particularly to a method of manufacturing a semiconductor substrate on which a nitride semiconductor layer is formed. Background technique [0002] As a high-output semiconductor element, a field effect transistor using a nitride semiconductor such as a high electron mobility transistor (HEMT: high electron mobility transistor) is known. When such a semiconductor element operates at a high output, its operating characteristics and reliability are significantly degraded due to temperature rise. Therefore, in order to suppress the temperature rise of the semiconductor element, a configuration in which a material with high heat dissipation property is provided near the heat generating portion to dissipate heat is often adopted. In particular, diamond is a material having the largest thermal conductivity among solid substances, and has properties preferable as a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/304H01L21/338H01L29/778H01L29/812
CPCC30B33/06C30B29/403H01L21/02002H01L21/7806H01L23/3171H01L21/568H01L23/3185C30B25/18C30B29/406C30B33/00H01L21/02389H01L21/0254H01L21/0262H01L21/4803H01L23/3732H01L29/2003
Inventor 桧座秀一西村邦彦藤川正洋滝口雄贵柳生荣治
Owner MITSUBISHI ELECTRIC CORP