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W-containing low-activation high-entropy alloy and preparation method thereof

A high-entropy alloy and low-activation technology, applied in metal material coating process, ion implantation plating, coating, etc., can solve unsatisfactory problems, achieve good uniformity, wide material applicability, and excellent application prospects Effect

Active Publication Date: 2021-12-28
NANJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, low-activation steel has the advantages of anti-oxidation, corrosion resistance, good machinability, and easy processing and forming. Service Environment Requirements

Method used

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  • W-containing low-activation high-entropy alloy and preparation method thereof
  • W-containing low-activation high-entropy alloy and preparation method thereof
  • W-containing low-activation high-entropy alloy and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Embodiment 1: The preparation steps of TiVCr / W nano multilayer structure film are as follows:

[0027] Step 1: Choose a single-sided polished single-crystal silicon wafer as the coating substrate, clean the substrate and dry it for use, and vacuum 4×10 -4 Pa, the working pressure is 1.0Pa, and the target is pre-sputtered under the condition of high-purity Ar gas.

[0028] Step 2: The sputtering power of the TiVCr target is set to 230W.

[0029] Step 3: Set the sputtering power of the W target to 90W, and deposit the W layer.

[0030] Step 4: Repeat steps 2 and 3 to alternately deposit TiVCr layers and W layers, with a single layer thickness of 10 nm, to obtain a nano-multilayer structure TiVCr / W high-entropy alloy film with a total thickness of 1 μm. figure 1 It is a schematic diagram of a nano-multilayer structure high-entropy alloy film. The hardness is about 12.3GPa.

Embodiment 2

[0031] Embodiment 2: The preparation steps of TiVCr / W nano multilayer structure film are as follows:

[0032] Step 1: Choose a single-sided polished single-crystal silicon wafer as the coating substrate, clean the substrate and dry it for use, and vacuum 4×10 -4 Pa, the working pressure is 1.0Pa, and the target is pre-sputtered under the condition of high-purity Ar gas.

[0033] Step 2: The sputtering power of the TiVCr target is set to 230W.

[0034] Step 3: Set the sputtering power of the W target to 90W, and deposit the W layer.

[0035] Step 4: Repeat steps 2 and 3 to alternately deposit TiVCr layers and W layers, with a single layer thickness of 100 nm, to obtain a nano-multilayer structure TiVCr / W high-entropy alloy film with a total thickness of 1 μm. The W layer presents a mixed structure of β-W and α-W, such as figure 2 shown. The hardness is about 9.3GPa.

Embodiment 3

[0036] Embodiment 3: (TiVCr) 90 W 5 / W nanometer multilayer structure film preparation steps are as follows:

[0037] Step 1: Choose a single-sided polished single-crystal silicon wafer as the coating substrate, clean the substrate and dry it for use, and vacuum 4×10 -4 Pa, the working pressure is 1.0Pa, and the target is pre-sputtered under the condition of high-purity Ar gas.

[0038] Step 2: The sputtering power of the TiVCr target is set to 230W, the sputtering power of the W target is set to 20W, and the TiVCrW high-entropy alloy thin film is deposited by co-sputtering.

[0039] Step 3: Set the sputtering power of the W target to 90W, and deposit the W layer.

[0040] Step 4: Repeat steps 2 and 3 to alternately deposit TiVCrW layers and W layers, with a single layer thickness of 2 nm, to obtain a nano-multilayer structure TiVCrW / W high-entropy alloy film with a total thickness of 1 μm. The hardness is about 11.9GPa, and it has both thermal stability and radiation resi...

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Abstract

The invention discloses a W-containing low-activation high-entropy alloy film and a preparation method thereof. The W-containing low-activation high-entropy alloy film is characterized in that a (TiVCr)<100-x>W<x> high-entropy alloy and a single-phase W layer are deposited through co-sputtering and alternate sputtering, a (TiVCr)<100-x>W<x> / W nano-multilayer structure with different single-layer thicknesses is formed, different W contents are doped in the (TiVCr)<100-x>W<x> layer, alpha-W and beta-W can be adjusted in the W single layer through the layer thickness, and through combination of different phases, interface strengthening and solid solution strengthening, a W-containing low-activation high-entropy alloy material with excellent mechanical and physical properties is obtained. The method is easy to operate, good in repeatability, clean and free of pollution, the prepared film is smooth in surface and uniform in film thickness and has the performance advantages of being low in activation, high in thermal stability, resistant to irradiation damage and the like, compared with a TiVCr single-phase film, the performance is remarkably improved, and the good application prospect is achieved.

Description

technical field [0001] The invention belongs to the field of metal thin film materials and their preparation, in particular to a W-containing low-activation high-entropy alloy thin film and its preparation method Background technique [0002] High-entropy alloys are multi-principal alloys composed of four or more elements in equiatomic or near-atomic ratios, which can form a single face-centered cubic (FCC), body-centered cubic (BCC) or hexagonal close-packed (HCP) structure. Due to the high mixing entropy, high-entropy alloys have four major effects: high-entropy effect, slow diffusion effect, lattice distortion effect, and cocktail effect. These four effects make high-entropy alloys have more excellent properties than other alloys, such as outstanding high-temperature strength, good wear resistance, good corrosion resistance, and excellent radiation resistance. At present, BCC structure high-entropy alloys are mostly refractory high-entropy alloys composed of high-meltin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/16C22C30/00
CPCC23C14/352C23C14/165C22C30/00C22C27/04C22C27/06
Inventor 操振华张子鉴陈家豪韩茜婷马涵
Owner NANJING UNIV OF TECH