Crystal pulling furnace for pulling single crystal silicon rod
A single crystal silicon rod and crystal pulling furnace technology, which is applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve problems such as slip dislocation, silicon wafer cross-contamination crystal lattice, and low heat treatment efficiency of silicon wafers. Achieve the effect of improving efficiency and avoiding cross contamination
Pending Publication Date: 2021-12-31
XIAN ESWIN MATERIAL TECH CO LTD
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Problems solved by technology
[0006] In order to solve the above technical problems, the embodiment of the present invention expects to provide a crystal pulling furnace for pulling single crystal silicon rods, which solves the problem of low heat treatment efficiency of silicon wafers, avoids the problem of cross contamination during the heat treatment of silicon wafers and the Possible lattice slip dislocation problems caused by contact with the wafer boat
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Embodiment Construction
[0016] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention.
[0017] see figure 1 , which shows one implementation of a conventional crystal puller. Such as figure 1 As shown, the crystal pulling furnace 1 includes: a furnace chamber surrounded by a shell 2 , a crucible 10 disposed in the furnace chamber, a graphite heater 20 , a crucible rotating mechanism 30 and a crucible carrying device 40 . The crucible 10 is carried by the crucible supporting device 40 , and the crucible rotating mechanism 30 is located below the crucible supporting device 40 , and is used to drive the crucible 10 to rotate around its own axis along the direction R.
[0018] When using the crystal pulling furnace 1 to pull a single crystal silicon rod, first, put the high-purity polycrystalline silicon raw material into the crucible 10, and the crucible 10 is con...
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An embodiment of the invention discloses a crystal pulling furnace for pulling a silicon single crystal rod, and the crystal pulling furnace comprises a heater defining a heat treatment chamber, wherein the heater is arranged in the crystal pulling furnace such that the silicon single crystal rod can enter the heat treatment chamber by moving along a crystal pulling direction. According to the crystal pulling furnace disclosed by the embodiment of the invention, the silicon single crystal rod is continuously subjected to heat treatment in the crystal pulling furnace after being pulled, and the heat treatment chamber is arranged in the crystal pulling furnace, so the silicon rod does not need to be transferred and conveyed, and the whole silicon single crystal rod can be subjected to heat treatment in the crystal pulling furnace, so the heat treatment efficiency is greatly improved; in addition, due to the fact that heat treatment is carried out on the silicon single crystal rod instead of the wafer, the problems of cross contamination in the wafer heat treatment process and crystal lattice slippage and dislocation possibly caused by contact between the wafer and the wafer boat are avoided.
Description
technical field [0001] The invention relates to the field of semiconductor silicon wafer production, in particular to a crystal pulling furnace for pulling single crystal silicon rods. Background technique [0002] Silicon wafers used to produce semiconductor electronic components such as integrated circuits are mainly manufactured by slicing single crystal silicon rods drawn by the Czochralski method. The Czochralski method involves melting polysilicon in a crucible made of quartz to obtain a silicon melt, immersing a single crystal seed in the silicon melt, and continuously lifting the seed to move away from the surface of the silicon melt, whereby during the movement A single crystal silicon rod grows at the phase interface. [0003] In the above-mentioned production process, it is very advantageous to provide such a silicon wafer: the silicon wafer has a crystal defect-free region (Denuded Zone, DZ) extending from the front side to the body and a denuded zone adjacent t...
Claims
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IPC IPC(8): C30B33/02C30B29/06C30B15/14C30B15/30C30B15/20
CPCC30B33/02C30B29/06C30B15/14C30B15/30C30B15/20
Inventor 徐鹏张婉婉
Owner XIAN ESWIN MATERIAL TECH CO LTD