Silicon micro-resonance pressure sensor based on electrostatic excitation piezoresistive detection

Abstract

The invention discloses a silicon micro-resonance pressure sensor based on electrostatic excitation piezoresistive detection. The sensor adopts a secondary sensitive structure compounded by a pressure sensitive film and a resonator, and the resonator is in-plane parallel reverse vibration. The resonator is connected with the pressure sensitive film through an anchor point, when external pressure acts on the pressure sensitive film and enables the pressure sensitive film to deform, the deformation is transmitted to the resonator through a silicon island on the pressure sensitive film and the anchor point, the internal stress of a resonant beam on the resonator is changed, and therefore the natural resonant frequency of the resonator is changed. A piezoresistor is arranged on the vibration pickup beam and used for completing pickup of resonant frequency, and then piezoresistive signal output is achieved through a first snakelike beam connected with the coupling beam.

Description

technical field [0001] The invention belongs to the technical field of micro-nano sensors, and in particular relates to a silicon micro-resonance pressure sensor chip based on electrostatic excitation piezoresistive detection. Background technique [0002] Silicon microresonant pressure sensor does not need analog-to-digital conversion because of its quasi-digital output, and its accuracy is mainly affected by the mechanical characteristics of the mechanical structure. Therefore, it has strong anti-interference ability and stable performance. It is currently the most accurate pressure sensor. It is also the focus of scientific research institutions and universities in various countries. Silicon microresonant pressure sensors are widely used in important fields such as aerospace, biomedicine, deep-sea exploration, meteorological monitoring, military equipment, and industrial process control. [0003] Research on silicon microresonant pressure sensors in China started relativ...

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Problems solved by technology

[0003] Research on silicon microresonant pressure sensors in China started relatively late. At present, silicon microresonant sensors developed by various scientific research institutions and universities have a small range, generally around 300KPa, and widely exist in the large-range research of silicon microresonant pressure sensors. The shortcomings of poor linearity and low sensitivity cannot meet the application in high-pressure fields such as deep sea and chemical industry.

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