Silicon metal oxide encapsulation film comprising metal or metal oxide in thin film, and manufacturing method therefor
An oxide, silicon metal technology, applied in the field of silicon oxide packaging film and its preparation, can solve the problems of reduced flexibility, reduced electrical characteristics and flexibility, shortened life, etc., to achieve improved productivity, shortened process time, and high film growth. rate effect
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[0066] In the preparation method of an embodiment of the present invention, the silicon metal oxide represented by the above chemical formula 1 can be prepared by allowing the metal precursor and the silicon precursor to enter the reactor at the same time.
[0067] The above-mentioned silicon precursor is an organoaminosilane compound containing a Si-N bond, preferably (C1-C10) alkylaminosilane, more preferably (C1-C6) alkylaminosilane, even more preferably, (C1-C3)Alkylaminosilanes. The alkyl group in the present invention may be linear or branched. And, the alkylaminosilane of the present invention includes trialkylaminosilane, dialkylaminosilane or monoalkylaminosilane, preferably, can be two (C1-C6) alkylaminosilane, more preferably, can be Di(C1-C3)alkylaminosilanes. And, the above-mentioned metal precursor is an organometallic compound comprising one or more metals selected from Group IB to Group VB and Group IIIA to Group IVA of the Periodic Table of Elements, prefera...
Embodiment 1
[0091] Example 1. Preparation of Silicon Metal Oxide Encapsulation Film by Plasma Enhanced Atomic Layer Deposition
[0092] In order to form a silicon metal oxide encapsulation film in a conventional plasma-enhanced atomic layer deposition method using the known plasma-enhanced atomic layer deposition method, diisopropylaminosilane was used as the silicon precursor, and cyclopentylaminosilane was used as the metal precursor. Dienyl tris(dimethylamino)zirconium, with 1.84×10 -4 Add silicon precursor at a rate of 9.09×10 Mol / sec -7 A zirconium precursor was added at a rate of Mol / second to prepare a silicon-zirconium oxide encapsulation film and perform film formation evaluation. Plasma and nitrous oxide (N 2 O) is used as a reaction gas, and argon as an inert gas is used for purging purposes. The number of deposition times is 136 cycles, and the specific deposition method of the silicon metal oxide packaging film is shown in Table 1.
[0093]As shown in Table 2, the thickne...
Embodiment 2
[0094] Example 2. Preparation of Silicon Metal Oxide Encapsulation Film by Plasma Enhanced Atomic Layer Deposition
[0095] In order to form a silicon metal oxide encapsulation film in a conventional plasma-enhanced atomic layer deposition apparatus using a known plasma-enhanced atomic layer deposition method, diisopropylaminosilane was used as a silicon precursor, and cyclopentylaminosilane was used as a metal precursor. Dienyl tris(dimethylamino)zirconium, with 1.84×10 -4 Add silicon precursor at a rate of 1.82×10 Mol / sec -6 A zirconium precursor was added at a rate of Mol / second to prepare a silicon-zirconium oxide encapsulation film and perform film formation evaluation. Plasma and nitrous oxide (N 2 O) is used as a reaction gas, and argon as an inert gas is used for purging purposes. The number of deposition times is 116 cycles, and the specific deposition method of the silicon metal oxide packaging film is shown in Table 1.
[0096] The deposited packaging film was a...
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