Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor structure and forming method thereof

A technology of semiconductor and gate structure, applied in the field of semiconductor structure and its formation, can solve the problem that the performance of insulated gate bipolar transistor needs to be improved, and achieves the improvement of carrier concentration, increase of turn-off loss, and reduction of on-resistance. Effect

Pending Publication Date: 2022-01-11
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the performance of existing IGBTs needs to be improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] As mentioned in the background, the performance of the IGBTs in the prior art still needs to be improved.

[0028] figure 1 It is a schematic diagram of the structure of an insulated gate bipolar transistor.

[0029] Please refer to figure 1 , the insulated gate bipolar transistor includes: an N-type substrate 100 having an opposite top surface 101 and a bottom surface 102; a P-type column structure 110 located in the N-type substrate 100, the top surface 101 The surface of the P-type column structure 110 is exposed, and the N-type substrate 100 and the P-type column structure 110 form a super junction structure (Super Junction), so as to improve the IGBT when the IGBT is turned off. The withstand voltage capability of the transistor; the N-type epitaxial layer 120 located on the top surface 101 and the surface of the P-type column structure 110; the P-type body region 130 located in the N-type epitaxial layer 120; the N-type source region located in the P-type body r...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Depthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a semiconductor structure and a forming method thereof, and the semiconductor structure comprises a substrate doped with first ions; a deep groove structure positioned in the substrate; a barrier doping region located at the top of the substrate and the deep trench structure; a first epitaxial layer positioned on the barrier doping region; a body region located in the first epitaxial layer, wherein at least part of the body region is further located above the deep trench structure; a source region located in the body region, wherein the body region exposes part of the surface of the source region; a gate structure located in the first epitaxial layer, wherein the gate structure is further located above the substrate adjacent to the deep trench structure, and the gate structure is in contact with the body region and the exposed part of the surface of the source region; and a collector region which is located at the bottom of the substrate, the second surface exposes the surface of the collector region, wherein the collector region and the bottom of the deep groove structure are separated by the substrate. Through the semiconductor structure, the performance of the insulated gate bipolar transistor is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] In medium and high power switching power supply devices, the insulated gate bipolar transistor (Insulated Gate Bipolartransistor, referred to as IGBT) has been widely used in modern power electronics technology due to its simple control and drive circuit, high operating frequency and large capacity. more and more widely used. [0003] The insulated gate bipolar transistor is a device composed of a MOSFET and a bipolar transistor. Its input is a MOSFET and its output is a PNP transistor. Therefore, it can be regarded as a Darlington transistor with a MOS input. It combines the advantages of these two devices, not only has the advantages of high input impedance, simple and fast driving of MOSFET devices, but also has the advantages of low conduction voltage drop and large capacity of bipol...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L29/06H01L29/739H01L21/331
CPCH01L29/0607H01L29/7393H01L29/66325H01L29/7397H01L29/0634H01L29/1095H01L29/66348H01L21/26513
Inventor 潘嘉孙鹏姚一平杨继业邢军军陈冲黄璇张同博
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP