Photoelectric synapse device based on organic-inorganic heterojunction, and preparation method and application thereof
A technology of synapse device and heterojunction, applied in the field of photoelectric synapse device and its preparation, can solve the problems of poor reliability, limited photoelectric synapse function, small wavelength response range, etc., achieve low power consumption, simple and economical preparation method , the effect of high sensitivity
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Embodiment 1
[0037] A preparation method based on an organic-inorganic heterojunction photoelectric synapse device, comprising the following steps:
[0038] (1) Conductive substrate treatment: The ITO bottom electrode was ultrasonically treated with deionized water, ethanol, and isopropanol for 15 minutes, and dried with nitrogen; then oxygen plasma treatment was performed.
[0039] (2) Preparation of oxide layer: Spin-coat zinc acetate dihydrate solution with a concentration of 20mg / mL on the bottom electrode at a speed of 3000r / min as a seed crystal, and treat it in an oven at 180°C for 30min. The above substrate was placed in a solution with deionized water, hexamethylenetetramine and zinc nitrate hexahydrate at a ratio of 25mL: 25mg: 50mg, reacted at 95°C for 3h, and finally washed with deionized water to prepare ZnO nanoarrays.
[0040] (3) Polymer layer preparation: The monomer 5,10,15,20-tetrakis(4-aminophenyl)porphyrin with a concentration of 0.05mol / mL and the monomer 2,5- Mix t...
Embodiment 2
[0043] A preparation method based on an organic-inorganic heterojunction photoelectric synapse device, comprising the following steps
[0044](1) Conductive substrate treatment: The ITO bottom electrode was ultrasonically treated with deionized water, ethanol, and isopropanol for 15 minutes, and dried with nitrogen; then oxygen plasma treatment was performed.
[0045] (2) Oxide layer preparation: Spin-coat zinc acetate dihydrate solution with a concentration of 10 mg / mL on the bottom electrode as a seed crystal at a speed of 3000 r / min, and treat it in an oven at 180 °C for 30 min. The above substrate was placed in a solution with deionized water, hexamethylenetetramine and zinc nitrate hexahydrate at a ratio of 25mL: 25mg: 50mg, reacted at 95°C for 3h, and finally washed with deionized water to prepare ZnO nanoarrays.
[0046] (3) Polymer layer preparation: The monomer 5,10,15,20-tetrakis(4-aminophenyl)porphyrin with a concentration of 0.05mol / mL and the monomer 2,5- Mix th...
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