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High-stability fast-erasing patterned polymer memory and preparation method thereof

A patterning and memory technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as memory device failure, instability, and obstacles to the practical application of polymer memory technology, and achieve erasing and writing speeds Fast, easy to obtain raw materials, simple and economical preparation method

Active Publication Date: 2021-01-22
NANJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the reliability of conventional polymer memory largely depends on the structural stability of the storage medium, its instability at extreme temperatures often leads to failure of the memory device
But so far, the reported polymer memory has not been able to meet the above requirements at the same time, which has caused great obstacles to the practical application of polymer memory technology.

Method used

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  • High-stability fast-erasing patterned polymer memory and preparation method thereof
  • High-stability fast-erasing patterned polymer memory and preparation method thereof
  • High-stability fast-erasing patterned polymer memory and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0047] A preparation method of a highly stable flash write patterned polymer memory, comprising the following steps:

[0048] (1) Conductive substrate treatment: The ITO substrate was ultrasonicated for 15 minutes with deionized water, ethanol, and isopropanol, respectively, and dried with nitrogen gas.

[0049] (2) 4,4'-bis(9-carbazole)biphenyl was dissolved in chlorobenzene to obtain a 0.1mol / L solution, and it was spin-coated on the ITO substrate at a speed of 2500r / min, and then Put it in the water vapor condition of 80% humidity environment for 30 minutes, take it out, then add a square mask on the monomer film, and finally place it under the light source for reaction, control the reaction temperature at 50°C, and the reaction time for 2 hours After the reaction, the sample is cleaned to obtain a square patterned polymer with surface holes grown on the ITO substrate, which is a storage medium layer with a thickness of 25nm, and the diameter and depth of the surface holes ar...

Embodiment 2

[0057] A preparation method of a highly stable flash write patterned polymer memory, comprising the following steps:

[0058] (1) Conductive substrate treatment: The ITO substrate was ultrasonicated for 15 minutes with deionized water, ethanol, and isopropanol, respectively, and dried with nitrogen gas.

[0059] (2) Dissolve 1,3,5-tri(9H-carbazol-9-yl)benzene in dichloromethane to obtain a 0.5mol / L solution, and spin-coat it on the ITO substrate at a speed of 3000r / min Then place it in the water vapor condition of 50% humidity environment for 60min and then take it out, then add a circular mask on the monomer film, and finally put it under the light source for reaction, control the reaction temperature to 75 ℃, the reaction time is 1.5 hours, after the reaction, the sample is cleaned to obtain a circular patterned polymer with surface holes grown on the ITO substrate, which is a storage medium layer with a thickness of 20nm, and the diameter and depth of the surface holes are ...

Embodiment 3

[0065] A preparation method of a highly stable flash write patterned polymer memory, comprising the following steps:

[0066] (1) Conductive substrate treatment: The ITO substrate was ultrasonicated for 15 minutes with deionized water, ethanol, and isopropanol, respectively, and dried with nitrogen gas.

[0067] (2) Dissolve benzotrithiophene in toluene to obtain a 1mol / L solution, and spin-coat it on an ITO substrate at a speed of 4000r / min, and then place it in a water vapor condition in a 30% humidity environment Take it out after standing for 90 minutes, then add an elliptical mask on the monomer film, and finally place it under a light source for reaction, control the reaction temperature at 25°C, and the reaction time for 3 hours. After the reaction, wash the sample to obtain growth The elliptical polymer with surface holes on the ITO substrate is a storage medium layer with a thickness of 30nm, and the diameter and depth of the surface holes are 150nm and 6nm respective...

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Abstract

The invention relates to the technical field of organic electronic devices and information storage, in particular to a high-stability fast-erasing patterned polymer memory and a preparation method thereof. The memory comprises a conductive substrate, a storage medium layer and a top electrode, the storage medium layer comprises a patterned conjugated microporous polymer with holes in the surface,and the polymer is prepared by adopting a specific method. The preparation method is simple and economical, the raw materials are easy to obtain, arbitrary patterning can be directly formed, good ultraviolet radiation and environmental stability are achieved, and the memory is high in erasing and writing speed and reaches the nanosecond level.

Description

technical field [0001] The invention relates to the technical field of organic electronic devices and information storage, in particular to a high-stability flash patterned polymer memory and a preparation method thereof. Background technique [0002] With the continuous development of microelectronics technology, the information technology industry has become an important pillar of economic development. As one of the most basic components of electronic equipment, memory is an important part of modern information technology. As the requirements for computer operating speed and mass data storage are getting higher and higher, people hope to obtain storage devices with excellent performance, low price, good stability, and high storage density to meet the corresponding needs. In recent years, a type of memory based on the change of device resistance has attracted extensive attention because of its advantages such as simple device structure, low power consumption, high enduranc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/05H01L51/40
CPCH10K71/16H10K10/20Y02D10/00
Inventor 刘举庆尹宇航刘正东黄维
Owner NANJING UNIV OF TECH
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