Wet etching method and distributed parameter circuit layout

A wet etching and etchant technology, which is used in the manufacture of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problems of the influence of the electromagnetic field of the layout, unqualified product appearance, etc., and achieves fast etching speed and shortened etching time. , the effect of thorough etching

Pending Publication Date: 2022-01-18
福建毫米电子有限公司
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These small metal dots not only lead to unqualified product appearance, but also affect the electromagnetic field in the layout

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wet etching method and distributed parameter circuit layout
  • Wet etching method and distributed parameter circuit layout

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] Such as figure 1 As shown, there are metal film residues in the circles of the number "9" and the number "6". This is because the chemical reaction of metal corrosion usually produces bubbles. On the surface of the corrosion area, a layer of bubble protection layer is formed, especially in the circle where the bubbles are more conducive to adhesion, it is easier to form a bubble protection layer, and the bubble protection layer isolates the metal film layer from the corrosion solution, which eventually leads to incomplete corrosion. use as figure 2 The wet etching method shown can avoid the above phenomenon. This wet etching method is used to etch the metal film layer on the surface of the substrate. The substrate is a ceramic substrate, and the metal film layer is generally made of good conductors such as copper or gold. However, the good conductor metal has poor adhesion on the substrate and cannot meet the reliability requirements. Therefore, an intermediate transi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a wet etching method and a distribution parameter circuit layout. The method comprises the following steps: A, sequentially carrying out the gluing, drying, exposure, development and hardening of a substrate, and enabling the surface of a metal film layer to be reserved to form a protection layer; B, heating a first corrosive liquid to enable the temperature of the first corrosive liquid to be 35-50 DEG C, immersing the substrate into the first corrosive liquid, and taking out the substrate after the metal film layer which does not need to be reserved is completely corroded; C, immersing the substrate into a second corrosive liquid, taking out the substrate when bubbles are gathered on the surface of an adhesion layer, blowing off the bubbles on the surface of the substrate by using pure nitrogen, and continuously immersing the substrate into the second corrosive liquid; and D, soaking the substrate in a third solution to dissolve the protective layer, washing away the third solution left on the surface of the substrate with clear water, and drying the substrate. According to the wet etching method, etching of the metal film layer can be more thorough, and residues are avoided, so the percent of pass of distributed parameter circuit layout etching is improved.

Description

technical field [0001] The invention relates to a wet etching method and a distributed parameter circuit layout. Background technique [0002] With the full rollout of 5G communications, the application of millimeter waves and submillimeter waves is becoming more and more extensive. This requires higher precision of the microwave components in the corresponding communication system. The miniaturization, high integration and high precision of microwave components have become the current technical trend and trend of the microwave industry. [0003] Under DC operation and low frequency operation, the working electromagnetic wavelength is much larger than the component size, all parameters in the circuit are concentrated at each point in space, and the signals between each point are transmitted instantaneously, which is the lumped parameter circuit. As the operating frequency increases, the transmission of the signal is the propagation of the electric field and the magnetic fie...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3213
CPCH01L21/32134H01L21/32139
Inventor 苏祺益潘甲东林碧海严勇黄星凡张烽
Owner 福建毫米电子有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap