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Quantum dot light-emitting diode and preparation method thereof

A quantum dot light-emitting and diode technology, which is applied in the manufacture of semiconductor/solid-state devices, organic semiconductor devices, electric solid-state devices, etc. Lifetime, effect of increasing electron and hole injection balance, reducing leakage current

Pending Publication Date: 2022-01-18
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of this application is to provide a quantum dot light-emitting diode and its preparation method, aiming to solve the problem that the luminous efficiency and service life of the existing quantum dot light-emitting diode need to be improved

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  • Quantum dot light-emitting diode and preparation method thereof
  • Quantum dot light-emitting diode and preparation method thereof
  • Quantum dot light-emitting diode and preparation method thereof

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preparation example Construction

[0045] Such as image 3 As shown, the second aspect of the embodiment of the present application provides a method for preparing a quantum dot light-emitting diode, comprising the following steps:

[0046] S01. Provide a halogen salt solution containing at least one of potassium chloride, sodium chloride, and potassium bromide, and a cathode substrate;

[0047] S02. Prepare a quantum dot luminescent layer on the surface of the cathode substrate;

[0048] S03. Depositing a halogen salt solution on the surface of the quantum dot luminescent layer away from the cathode substrate, heat treatment, and preparing a hole blocking layer;

[0049] S04. Depositing a hole transport material on the surface of the hole blocking layer away from the quantum dot light-emitting layer to prepare a hole transport layer;

[0050] S05. Prepare an anode on the surface of the hole transport layer facing away from the hole blocking layer.

[0051] The preparation method of the quantum dot light-emi...

Embodiment 1

[0062] A method for preparing a quantum dot light-emitting diode, comprising the following steps:

[0063] ITO cathode on transparent substrate;

[0064] Dissolve ZnO nanoparticles in ethanol or n-butanol to prepare a ZnO nanoparticle solution with a concentration of 20mg / ml, spin-coat the ZnO nanoparticle solution on ITO, and heat at 80°C for 30 minutes to prepare an electron transport layer ;

[0065] Dissolve InP / ZnSe / ZnS core-shell quantum dots in toluene or n-hexane to prepare a quantum dot solution with a concentration of 20 mg / ml, and spin-coat the quantum dot solution on the electron transport layer to prepare a quantum dot light-emitting layer;

[0066] Sodium chloride (NaCl) was dissolved in glycerin to prepare a sodium chloride solution, and the quantum dot luminescent layer was spin-coated with a concentration of 1.0 mg / ml sodium chloride solution, and heat-treated at 100°C for 5 minutes to prepare a hole blocking layer;

[0067] Spin-coat TFB with a concentratio...

Embodiment 2

[0071] A method for preparing a quantum dot light-emitting diode, comprising the following steps:

[0072] ITO cathode on transparent substrate;

[0073] Dissolving ZnO nanoparticles in ethanol or n-butanol to configure ZnO nanoparticle ink with a concentration of 10mg / ml, printing ZnO nanoparticle ink on ITO, and heating at 100°C for 30 minutes to prepare an electron transport layer;

[0074] Dissolve InP / ZnSe / ZnS core-shell quantum dots in toluene or n-hexane to configure quantum dot ink with a concentration of 10 mg / ml, and print quantum dot ink on the electron transport layer to prepare a quantum dot light-emitting layer;

[0075] Potassium chloride (KCl) was dissolved in glycerin to configure a potassium chloride solution, and the concentration of 1.5 mg / ml potassium chloride solution was spin-coated on the quantum dot light-emitting layer, and heat-treated at 90°C for 5 minutes to prepare a hole blocking layer;

[0076] Spin-coat TFB with a concentration of 8 mg / ml on t...

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Abstract

The invention relates to the technical field of display, and provides a quantum dot light-emitting diode, and the diode comprises a cathode and an anode which are oppositely arranged, a quantum dot light-emitting layer arranged between the cathode and the anode, a hole transport layer arranged between the anode and the quantum dot light-emitting layer, and a hole blocking layer which is arranged between the hole transmission layer and the quantum dot light-emitting layer; wherein the material of the hole blocking layer is selected from at least one of potassium chloride and sodium chloride. At least one of potassium chloride, sodium chloride and potassium bromide is adopted as the material of the hole blocking layer, so that the electron and hole injection balance of the quantum dot light-emitting diode is increased, the leakage current of a device is effectively reduced, and the luminous efficiency and the service life of the quantum dot light-emitting diode are improved.

Description

technical field [0001] The invention belongs to the field of display technology, in particular to a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Because quantum dots (Semiconductor quantum dots, QDs) have the advantages of narrow luminous line width, adjustable luminous wavelength, high luminous color saturation, and wide luminous color gamut, plus the advantages of long theoretical life of inorganic nanocrystals and good device stability, etc., Quantum dot light emitting diodes (Quantum Dot Light Emitting Diodes, QLED) with quantum dots as the luminescent center have become a promising light source for next-generation displays and solid-state lighting. [0003] In order to promote the development of QLED devices, people have continuously improved the performance of QLED devices by changing the material of the charge transport layer and optimizing the device structure. At present, the external quantum efficiency of red QLE...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/54H01L51/50H01L51/56
CPCH10K71/12H10K50/115H10K50/18H10K2102/00H10K71/00
Inventor 徐威
Owner TCL CORPORATION
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