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ITO conductive film for touch sensor, preparation method of ITO conductive film and application of ITO conductive film to touch screen

A technology of touch sensor and conductive film, which is applied in the direction of cable/conductor manufacturing, conductive layer on insulating carrier, instrument, etc. It can solve the problems of abnormal response of sensors in the visible area, uneven etching of ITO layer, and residue of crystalline ITO, etc. Achieve the effect of avoiding short circuit between wires, uniform surface and good conductivity

Pending Publication Date: 2022-01-28
惠州市天誉科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When making the lead area (PIN pin) of the touch screen sensor and the transparent conductive pattern in the visible area, it is easy to cause the phenomenon that the ITO layer cannot be uniformly etched, and there are crystalline ITO residues, resulting in abnormal response of the sensor in the visible area or short circuit between leads.

Method used

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  • ITO conductive film for touch sensor, preparation method of ITO conductive film and application of ITO conductive film to touch screen
  • ITO conductive film for touch sensor, preparation method of ITO conductive film and application of ITO conductive film to touch screen
  • ITO conductive film for touch sensor, preparation method of ITO conductive film and application of ITO conductive film to touch screen

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] A kind of ITO conductive film for touch sensor, such as figure 1 As shown, it includes a substrate layer 5, and also includes an adhesive layer 4, a crystallization transition layer 3, an easy crystallization layer 2 and a metal conductive layer 1 sequentially deposited on the surface of the substrate layer 5; the crystallization transition layer 3 is in a crystalline state The first ITO layer, the easily crystallizable layer 2 is an amorphous second ITO layer.

[0038]Wherein, the material of the substrate layer 5 is PET with a thickness of 125 μm, and the bonding layer 4 is SiO with a thickness of 15 nm. 2 layer, the thickness of the first ITO layer is 5nm, the thickness of the second ITO layer is 20nm; the metal conductive layer 1 is a Cu layer with a thickness of 300nm.

[0039] The preparation method of the ITO conductive thin film for the touch sensor, the steps are to deposit the bonding layer 4, the first ITO layer 3, the second ITO2 layer and the metal conduct...

Embodiment 2

[0045] An ITO conductive film for a touch sensor, comprising a substrate layer, and further comprising an adhesive layer, a crystallization transition layer, an easy crystallization layer and a metal conductive layer deposited on the surface of the substrate layer in sequence; the crystallization transition layer is in a crystalline state The first ITO layer, the easy-to-crystallize layer is an amorphous second ITO layer.

[0046] Wherein, the material of the substrate layer is PET with a thickness of 125 μm, and the bonding layer is Si with a thickness of 15 nm. 3 N 4 layer, the thickness of the first ITO layer is 5 nm, the thickness of the second ITO layer is 20 nm; the metal conductive layer is an Ag layer with a thickness of 300 nm.

[0047] The preparation method of the ITO conductive film for the touch sensor comprises the steps of sequentially depositing a bonding layer, a first ITO layer, a second ITO layer and a metal conductive layer on the surface of the substrate ...

Embodiment 3

[0053] An ITO conductive film for a touch sensor, comprising a substrate layer, and further comprising an adhesive layer, a crystallization transition layer, an easy crystallization layer and a metal conductive layer deposited on the surface of the substrate layer in sequence; the crystallization transition layer is in a crystalline state The first ITO layer, the easy-to-crystallize layer is an amorphous second ITO layer.

[0054] Wherein, the material of the substrate layer is PMMA with a thickness of 125 μm, and the bonding layer is SiO with a thickness of 50 nm. 2 layer, the thickness of the first ITO layer is 10 nm, the thickness of the second ITO layer is 10 nm; the metal conductive layer is a Cu layer with a thickness of 300 nm.

[0055] The preparation method of the ITO conductive film for the touch sensor comprises the steps of sequentially depositing a bonding layer, a first ITO layer, a second ITO layer and a metal conductive layer on the surface of the substrate lay...

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Abstract

The invention belongs to the technical field of touch sensors. An ITO conductive film for the touch sensor comprises a base material layer, and further comprises a bonding layer, a crystallization transition layer, an easy crystallization layer and a metal conductive layer which are sequentially deposited on the surface of the base material layer; and the crystallization transition layer is a first ITO layer in a crystalline state, and the easy crystallization layer is a second ITO layer in a non-crystalline state. The ITO conductive film is good in toughness, high in light transmittance, small in resistance, high in carrier mobility and good in conductivity.

Description

technical field [0001] The invention belongs to the technical field of touch sensors, and in particular relates to an ITO conductive film for a touch sensor, a preparation method thereof, and a touch screen application. Background technique [0002] Indium tin oxide (ITO) conductive thin film has been used in liquid crystal display (LCD), organic electroluminescent display (OLED), It is widely used as transparent electrodes in optoelectronic devices such as e-books, solar cells, and photoelectric sensors. The traditional ITO conductive film is prepared by depositing the ITO conductive layer by high-temperature magnetron sputtering on the base of hard glass. Due to the hard and brittle nature of the glass itself, it is difficult to bend freely, and there are processing and Difficulties in handling, thus unable to meet the requirements of the rapid development of optoelectronic display technology in the direction of large-scale and flexible. [0003] The advantage of the ful...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B5/14H01B13/00G06F3/041
CPCH01B5/14H01B13/00G06F3/041G06F2203/04103G06F2203/04104
Inventor 华建军
Owner 惠州市天誉科技有限公司
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