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Square sheet semiconductor pulse power switch and preparation method thereof

A pulse power switch and semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of weak voltage tolerance and low tolerance of RBDT current rise rate, and achieve increased Area, improved voltage tolerance, uniform spacing settings

Active Publication Date: 2022-02-01
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0007] Aiming at the defects of the prior art, the object of the present invention is a square chip semiconductor pulse power switch and its preparation method, which aims to solve the problems of low current rise rate tolerance and weak voltage tolerance of RBDT in the prior art

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  • Square sheet semiconductor pulse power switch and preparation method thereof
  • Square sheet semiconductor pulse power switch and preparation method thereof
  • Square sheet semiconductor pulse power switch and preparation method thereof

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Embodiment Construction

[0042] In order to make the object, technical solution and advantages of the present invention more clear, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0043]A reverse blocking double-terminal solid-state thyristor (Reverse Blocking Diode Thyristor, RBDT) is a semiconductor closed switch with two ends in a pnpn structure. The RBDT device was originally called a reverse switching rectifier (Reverse SwitchingRectifier, RSR). The RBDT device has a similar structure to another semiconductor device - the thyristor. Both are pnpn four-layer structures, and both can be prepared by diffusion technology. However, the two work in different ways. The RBDT device only has a cathode and an anode. During the triggering process of the RBDT device, a trigger ...

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Abstract

The invention discloses a square semiconductor pulse power switch and a preparation method thereof. The method comprises the steps that: (1), after an n-type Si chip is cleaned, a first groove is formed in one side of the periphery of the Si chip through laser, and the shape of the first groove is square; (2) doping treatment is performed on the Si chip with the first groove, and a pnpn structure is formed; (3) a second groove is etched in the inner edge of the periphery of the anode of the pnpn structure; (4) a third groove is etched on the outer edge of the periphery of the anode of the pnpn structure, the width of the third groove is larger than that of the second groove, and the depth of the third groove is larger than that of the second groove; (5) the slotted Si chip is protected; and (6) the Si chip is cut into a square with a preset size according to needs, so that the square semiconductor pulse power switch can be obtained. According to the square sheet semiconductor pulse power switch and the preparation method thereof of the invention, an n base region is prolonged, the concentration of the n base region is reduced, meanwhile, the second groove and the third groove are formed in the anode, and the cross section of the bottom end of each groove is arc-shaped, so that the terminal electric field distribution can be improved, and the voltage endurance capability of the RBDT is improved.

Description

technical field [0001] The invention belongs to the technical field of pulse power, and more specifically relates to a square chip semiconductor pulse power switch and a preparation method thereof. Background technique [0002] Pulse power technology was born in the 1960s. It is an electrophysical technology that stores energy at a lower power and then converts it into pulsed electromagnetic energy at a much higher power and releases it to a specific load. It is also a kind of electrical energy. transform technology. Modern pulse power technology is widely used in electromagnetic emission, light source, environmental protection, material, biology, medical treatment and other fields. Similar to a generation of power electronic devices determining a generation of power electronic circuits, the pulse power switch is also the bottleneck of the entire pulse power system. The level that the switch can achieve directly affects key indicators such as pulse amplitude, rise time, and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/268H01L21/225
CPCH01L21/268H01L21/2251Y02P70/50
Inventor 梁琳卿正恒
Owner HUAZHONG UNIV OF SCI & TECH
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