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Cleaning composition for semiconductor substrates

A cleaning composition, a technology for the composition, applied in the field of cleaning compositions, dipropylene glycol, dimethylacetamide, sulfolane, and sulfoxide, can solve problems such as limitations, environmental problems, and reduced photoresist removal performance, and achieve Excellent cleaning performance, low toxicity effect

Pending Publication Date: 2022-02-01
VERSUM MATERIALS US LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to its potentially explosive properties, the use of HA has caused serious environmental concerns, and as a result, some end users have imposed severe restrictions on the use of HA
Problems in the art with HA-free compositions typically exhibit reduced photoresist removal performance

Method used

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  • Cleaning composition for semiconductor substrates
  • Cleaning composition for semiconductor substrates
  • Cleaning composition for semiconductor substrates

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0067] The following examples are provided for the purpose of further illustrating the present invention and are not intended to limit the present invention.

[0068] General procedure for preparing cleaning compositions

[0069] All compositions that were the subject of this example were prepared by mixing 500 g of material in a 600 mL beaker with a Teflon-coated stir bar and stored in plastic bottles. The liquid components may be added in any order before the solid components.

[0070] Substrate Composition

[0071] The substrates used in this embodiment are Al metal lines and Al pads. The Al metal line or Al pad substrate consists of one or more of the following layers patterned and etched by reactive ion etching (RIE): AlN, W, TiN, Al, TiN, Ti metallurgy. Photoresist was not removed by oxygen plasma ashing. No ashing step was used, and the compositions evaluated herein were used to clean photoresists without any undesired etching of contacted materials. The photor...

Embodiment 2

[0097] Example 2: Catechol as a Corrosion Inhibitor

[0098] Table 3 shows that catechol can act as a co-inhibitor for both Al-Cu and W corrosion.

[0099] Table 6. Effect of Catechol Concentration

[0100]

[0101]

Embodiment 3

[0102] Example 3: Optimization of Corrosion Inhibitors

[0103] Table 7 shows that at an initial catechol concentration of 2% by weight, increasing the concentration of citric acid decreased the metal etch rate for both Al-Cu and W.

[0104] Table 7. Effect of citric acid concentration in the presence of catechol

[0105]

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PUM

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Abstract

Compositions and methods useful for removing residue and photoresist from a semiconductor substrate are provided. The compositions comprise: from about 5 to about 60% by wt. of water; from about 10 to about 90% by wt. of a water-miscible organic solvent; from about 5 to about 90% by wt. of at least one alkanolamine; from about 0.05 to about 20% by wt. of at least one polyfunctional organic acid; and from about 0.1 to about 10% by wt. of at least one phenol-type corrosion inhibitor, wherein the composition is substantially free of hydroxylamine.

Description

Background technique [0001] The present invention provides cleaning compositions useful in a variety of applications including, for example, the removal of unwanted resist films, post-etch and post-ash residues on semiconductor substrates. In particular, the present invention provides cleaning compositions particularly suitable for removing photoresists, etch residues and anti-reflective coatings (ARCs) which are free of hydroxylamine and exhibit compatibility with materials such as aluminum-copper alloys, aluminum nitride, Excellent compatibility with tungsten, alumina and / or other materials such as Al, Ti, TiN, Ta, TaN or silicides (eg tungsten silicides) or dielectrics. [0002] The background of the invention will be described in connection with its use in cleaning applications involving the manufacture of integrated circuits. However, it should be understood that the use of the present invention has broader applicability as described below. [0003] In the manufacture o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C11D1/00C11D3/20C11D3/28C11D3/30C11D3/32C11D3/33C11D3/34C11D3/36C11D3/44C11D3/60B08B3/08
CPCC11D1/00C11D3/28C11D3/3454C11D3/2068C11D3/2044C11D3/2051C11D3/2058C11D3/32C11D3/30C11D3/2079C11D3/2082C11D3/2086C11D3/33C11D3/43C11D3/361B08B3/08C11D2111/22G03F7/425G03F7/426C11D7/5004C11D7/3218C11D7/265C11D3/0073C11D7/3281C11D7/34C11D7/3263C11D7/263C11D7/261H01L21/02052
Inventor 王莉莉吴爱萍孙来生李翊嘉曹远美
Owner VERSUM MATERIALS US LLC