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WO<3-x>-WS2 one-dimensional-two-dimensional heterojunction as well as preparation method and application thereof

A two-dimensional heterojunction, wo3-x-ws2 technology, applied in chemical instruments and methods, tungsten oxide/tungsten hydroxide, tungsten compounds, etc., can solve difficult to meet application requirements, one-dimensional or two-dimensional structural performance single and other issues, to achieve the effect of excellent photodetection performance

Pending Publication Date: 2022-02-08
四川恒瑞天成科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, one-dimensional or two-dimensional structural performance is difficult to meet a wide range of application requirements

Method used

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  • WO&lt;3-x&gt;-WS2 one-dimensional-two-dimensional heterojunction as well as preparation method and application thereof
  • WO&lt;3-x&gt;-WS2 one-dimensional-two-dimensional heterojunction as well as preparation method and application thereof
  • WO&lt;3-x&gt;-WS2 one-dimensional-two-dimensional heterojunction as well as preparation method and application thereof

Examples

Experimental program
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preparation example Construction

[0027] Such as figure 1 As shown, a WO 3-x -WS 2 A method for preparing a one-dimensional-two-dimensional heterojunction, comprising the following steps:

[0028] Step 1: Place 10mg-3g ammonium metatungstate and 1mg-300mg sulfur powder in the heating zone of the chemical vapor deposition reaction chamber; a furnace plug is set between the ammonium metatungstate and the sulfur powder; The gap above the plug and the pipe wall passes through.

[0029] Step 2: Confirm that the entire cavity is well sealed, vacuumize to less than 0.01MPa, fill it with argon to normal pressure and repeat this process three times to strictly control the concentration of oxygen in the cavity.

[0030] Step 3: Under protective atmosphere conditions, heat up to 400-700°C at a rate of 10-30°C / min, then heat up to 1100-1500°C at a rate of 10°C / min, keep warm for 20-40min, and cool to room temperature with the furnace During this period, continue to fill with argon at a rate of 10-60 sccm, and set it o...

Embodiment 1

[0032] A kind of WO 3-x -WS 2 A method for preparing a one-dimensional-two-dimensional heterojunction, comprising the following steps:

[0033] Step 1: 1g of ammonium metatungstate and 50mg of sulfur powder are placed in the heating zone of the chemical vapor deposition reaction chamber; a furnace plug is arranged between the ammonium metatungstate and the sulfur powder; void through.

[0034] Step 2: Confirm that the entire cavity is well sealed, vacuumize to less than 0.01MPa, fill it with argon to normal pressure and repeat this process three times to strictly control the concentration of oxygen in the cavity.

[0035] Step 3: Under protective atmosphere conditions, raise the temperature to 600°C at a rate of 15°C / min, then raise the temperature to 1450°C at a rate of 10°C / min, keep the temperature for 40min, and cool to room temperature with the furnace, during this period, continue to use 50sccm Fill with argon gas at a high rate, and set it on the substrate on the sid...

Embodiment 2

[0037] A kind of WO 3-x -WS 2 A method for preparing a one-dimensional-two-dimensional heterojunction, comprising the following steps:

[0038] Step 1: Place 300mg of ammonium metatungstate and 15mg of sulfur powder in the heating zone of the chemical vapor deposition reaction chamber; a furnace plug is set between the ammonium metatungstate and the sulfur powder; the sulfur element is carried along the top of the furnace plug and the tube wall through the gap.

[0039] Step 2: Confirm that the entire cavity is well sealed, vacuumize to less than 0.01MPa, fill it with argon to normal pressure and repeat this process three times to strictly control the concentration of oxygen in the cavity.

[0040] Step 3: Under protective atmosphere conditions, raise the temperature to 600°C at a rate of 15°C / min, then raise the temperature to 1450°C at a rate of 10°C / min, keep the temperature for 40min, and cool to room temperature with the furnace, during this period, continue to use 50sc...

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Abstract

The invention discloses a WO<3-x>-WS2 one-dimensional-two-dimensional heterojunction as well as a preparation method and application thereof. The preparation method comprises the following steps that: 1, ammonium metatungstate and sulfur powder are put in a heating area of a chemical vapor deposition reaction cavity, and a furnace plug is arranged between the ammonium metatungstate and the sulfur powder; 2, the reaction cavity is filled with a protective atmosphere; and 3, under the condition of the protective atmosphere, the temperature is increased to 400-700 DEG C at the rate of 10-30 DEG C / min, then the temperature is increased to 1100-1500 DEG C at the rate of 10 DEG C / min, heat preservation is conducted for 20-40 min, the product is cooled to room temperature along with the furnace, and the needed heterostructure is obtained on a substrate arranged on one side of ammonium metatungstate. According to the invention, a WO<3-x>-WS2 one-dimensional-two-dimensional heterostructure is constructed by a one-step chemical vapor deposition growth method with a simple preparation process, and WO<3-x> one-dimensional nanowires with the height of about 7.1 nm are grown on single-layer WS2 two-dimensional nanosheets; and the heterojunction has excellent photoelectric detection performance.

Description

technical field [0001] The invention relates to a semiconductor heterogeneous nanostructure, in particular to a WO 3-x -WS 2 One-dimensional-two-dimensional heterojunction, preparation method and application. Background technique [0002] At present, the heterojunction nanostructure not only has important scientific significance for the basic theoretical research of crystal growth, but also has practical application value in the field of micro-nano electronics. Most of the currently common heterojunctions are one-dimensional or two-dimensional structures. However, one-dimensional or two-dimensional structures with a single performance are difficult to meet a wide range of application requirements. Heterojunction nanomaterials have novel properties determined by their material composition, shape, size, and heterogeneous interface between different components. [0003] The preparation methods of heterojunction mainly include chemical vapor deposition, laser ablation, templ...

Claims

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Application Information

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IPC IPC(8): C01G41/02C01G41/00
CPCC01G41/02C01G41/00C01P2004/04C01P2002/85C01P2004/01C01P2006/60
Inventor 欧建臻陈冠羽周辉胡心一陈柯宇余昊李中程银芬任白玉
Owner 四川恒瑞天成科技有限公司
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