Bipolar pulse magnetron sputtering system and method for improving flow and energy of deposited ions

Abstract

The invention provides a bipolar pulse magnetron sputtering system and a method for improving flow and energy ofdeposited ion. The magnetron sputtering system comprises a vacuum chamber and power supply equipment; the vacuum chamber comprises a sputtering target and an auxiliary anode; the power supplyequipment comprises a bipolar pulse magnetron sputtering power supply, a current one-way conduction component and an auxiliary anode power supply, wherien the sputtering target is connected with the pulse output end of the bipolar pulse magnetron sputtering power supply; (i) the current one-way conduction component is connected in series between the auxiliary anode and the pulse output end of the bipolar pulse magnetron sputtering power supply, and positive pulse voltage is applied to the auxiliary anode by utilizing the one-way conduction characteristic, or (ii) the auxiliary anode is connected with the voltage output terminal of another auxiliary anode power supply, so that the auxiliary anode is used for optimizing ion diffusion and enhancing ion energy, and the deposited ion energy is improved. According to the method, ion diffusion can be effectively optimized, and the energy and flow of deposited ions are improved.

Description

technical field [0001] The present invention relates to equipment and methods for magnetron sputtering. Background technique [0002] Since the advent of magnetron sputtering, the research on it has been increasing year by year, and has attracted the attention of scholars at home and abroad. This technology is widely used in the field of thin film preparation due to its low-temperature deposition, smooth surface, and no particle defects. ), resulting in poor controllability and difficulty in optimizing the quality and performance of the deposited film. In response to this problem, foreign scholars have developed a high-power pulsed magnetron sputtering technology. The peak power during the discharge process can exceed 2 orders of magnitude of ordinary magnetron sputtering, reaching 10kw / cm2, and the electron density around the target can reach 1019 / m3, and the ionization rate of the sputtered material can reach more than 90%, which makes this technology attract great atten...

AI Technical Summary

Problems solved by technology

However, although high-power pulsed magnetron sputtering has significant advantages in increasing the ionization rate of deposited particles, the higher negative voltage will cause the sputtered target atoms to ionize into ions and then be attracted back by the negative voltage of the target. The deposition rate of high-power pulsed magnetron sputtering is significantly lower than that of traditional DC magnetron sputtering, which has also become a barrier to the industrial promotion of the technology itself

Moreover, the energy of ions in the high-power pulsed magnetron sputtering discharge is between 1 and 5eV, so the application on insulating substrates still cannot meet people's needs.

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