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N-type double-sided cadmium telluride solar cell

A solar cell and cadmium telluride technology, which is applied in the field of solar photovoltaic power generation, can solve the problems of back surface barrier, poor light absorption effect, and poor comprehensive performance of n-type CdTe solar cells, and achieves improved light absorption efficiency, improved performance, and improved performance. The effect of facilitating electron transport

Active Publication Date: 2022-02-15
LESHAN VOCATIONAL & TECHN COLLEGE
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  • Description
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Problems solved by technology

[0008] The invention provides an n-type double-sided cadmium telluride solar cell, which aims to solve the problem of poor light absorption effect of the n-type CdTe solar cell in the prior art, resulting in poor comprehensive performance of the n-type CdTe solar cell
[0010] 1. Compared with the high back barrier of the p-type CdTe absorber, the n-type CdTe absorber is easy to form ohmic contact with the material, which solves the problem of the back barrier

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  • N-type double-sided cadmium telluride solar cell

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Embodiment Construction

[0029] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative efforts shall fall within the protection scope of the present invention.

[0030] like figure 1 As shown, an n-type double-sided cadmium telluride solar cell, from the front to the back, includes: a glass substrate 1, a light-transmitting front electrode 2, a window layer 3, an n-type CdTe absorbing layer 4, and a transparent buffer with a wide band gap layer 5 and light-transmitting back electrode 6; a built-in electric field is formed between the n-type CdTe absorbing layer 4 and the transi...

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Abstract

The invention provides an n-type double-sided cadmium telluride solar cell, and aims to solve the problems that in the prior art, an n-type CdTe solar cell is poor in light absorption effect, and the comprehensive performance of the n-type CdTe solar cell is poor. The n-type double-sided cadmium telluride solar cell sequentially comprises a glass substrate, a light-transmitting front electrode, a window layer, an n-type CdTe absorption layer, a wide-forbidden-band transparent buffer layer and a light-transmitting back electrode from the front surface to the back surface; a built-in electric field is formed between the n-type CdTe absorption layer and the transition metal oxide thin film; the work function of the transparent buffer layer is lower than that of the n-type CdTe absorption layer, and a back electric field is formed between the n-type CdTe absorption layer and the transparent buffer layer; and the window layer is a transition metal oxide thin film with a high work function. The problem of poor light absorption effect of the n-type CdTe solar cell in the prior art is solved, and the problem of high back potential barrier of the p-type CdTe absorption layer in the prior art is solved in combination with the fact that the n-type CdTe absorption layer is easy to form ohmic contact with the material.

Description

technical field [0001] The invention belongs to the technical field of solar photovoltaic power generation, and in particular relates to an n-type double-sided cadmium telluride solar cell. Background technique [0002] Solar photovoltaic power generation technology has become one of the core technologies for the innovation of renewable energy technology and the goal of carbon neutrality due to its advantages of direct energy conversion, abundant resources, and low cost per unit of electricity. Cadmium telluride (CdTe) thin-film solar cells have unique advantages such as high optical absorption coefficient, good low-light performance, small temperature coefficient, and simple production process, and have great development prospects in photovoltaic building integration and "photovoltaic +" innovative applications. , is currently the largest industrial production of thin-film solar cell technology. The working principle of the solar cell is: under the action of the built-in e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0296H01L31/0216H01L31/068
CPCH01L31/02963H01L31/02167H01L31/0684Y02E10/547
Inventor 何帆
Owner LESHAN VOCATIONAL & TECHN COLLEGE