LED chip and preparation method thereof

Abstract

The invention discloses an LED chip and a preparation method thereof. The LED chip comprises a substrate and a first type semiconductor layer, a multi-quantum well active layer and a second type semiconductor layer which are sequentially stacked on the substrate, wherein the multi-quantum well active layer comprises quantum barrier layers and quantum well layers which are alternately arranged in the direction away from the substrate, the quantum barrier layers are InGaN quantum barrier layers, the quantum well layer comprises at least one lamination unit, and the lamination unit comprises a first InGaN quantum well layer, an InN layer and a second InGaN quantum well layer which are sequentially arranged in the direction away from the substrate, that is to say, the LED chip introduces at least one InN layer into the quantum well layer, so the InGaN quantum well layer with a higher In component on the whole is obtained at a relatively higher growth temperature; therefore, dislocation density and impurity incorporation of the InGaN quantum well layer are effectively reduced, the crystal quality of the multi-quantum well active layer is improved, and luminous efficiency of the LED chip is further improved.

Description

technical field [0001] The present application relates to the technical field of semiconductor optoelectronics, in particular to an LED chip and a preparation method thereof. Background technique [0002] In recent years, III-V nitrides have been widely used in optoelectronic technology due to their excellent physical and chemical properties, such as large band gap, high breakdown electric field, and high electron saturation mobility. Among them, InGaN material has become the main luminescent material because its bandgap can cover the whole band from infrared to ultraviolet. At present, InGaN-based blue-green LEDs have been widely used in lighting, display and other fields. With the development of full-spectrum lighting technology and Micro LED With the continuous development of color display technology, InGaN-based yellow and red LEDs are also placed on high expectations, which has caused extensive research. [0003] Although the current yellow and red LEDs are mainly made...

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Problems solved by technology

[0004] In order to change the luminous wavelength of InGaN-based LEDs from blue-green light to yellow light and red light, it is necessary to increase the In composition of the InGaN quantum well layer in the multi-quantum well active layer of InGaN-based LEDs. At present, the method of reducing the growth temperature is mainly used. Increase the In composition of the InGaN quantum well layer in the InGaN-based LED, but the lower growth temperature makes the InGaN quantum well layer introduce more dislocation density during the growth process, increase the incorporation of impurities, and seriously deteriorate the performance of multiple quantum wells. The crystal quality of the source layer leads to a sharp increase of non-radiative recombination centers in the multi-quantum well active layer, which affects the luminous efficiency of InGaN-based LEDs

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