Preparation method for regulating and controlling morphology of two-dimensional VA family layered material by using solution polarity

Abstract

The invention relates to a preparation method for regulating and controlling the morphology of a two-dimensional VA family layered material by using solution polarity and relates to the technical field of material preparation, and aims to solve the problem that existing preparation cannot balance growth speed and morphology control. The preparation method comprises the following steps that: step 1, the two-dimensional VA family layered material is prepared by using an electrochemical stripping method, a solute of an electrolyte is tetrapropylammonium bromide powder, and a solvent is an organic solvent, a VA group material is used as a cathode, a platinum sheet is used as a counter electrode, and Ag / AgCl is used as a reference electrode; step 2, the two-dimensional VA family layered material obtained by stripping in the electrolyte is separated, and then the two-dimensional VA family layered material is washed; and step 3, a second solution with polarity is selected to wash the two-dimensional VA family layered material obtained in the step 2 to obtain the morphology-regulated two-dimensional VA family layered material. According to the method, the electrochemical stripping method has low requirement for growth conditions, realizes high growth rate, can achieve rapid stripping, and does not damage the material; and the morphology of the two-dimensional VA-family layered material can be regulated and controlled by changing the polarity of the second solution.

Description

technical field [0001] The invention relates to the technical field of preparation of two-dimensional VA group layered materials, in particular to a preparation method for regulating the morphology of two-dimensional VA group layered materials by using the polarity of a solution. Background technique [0002] With the vigorous development of industrial technology, all walks of life have higher and higher requirements for electronic devices, and the demand for information continues to increase. Microelectronics technology is facing its "limit" challenge, which will inevitably change the current status of the semiconductor industry. The development and innovation of materials science is one of the driving forces for such industrial progress. Finding new alternative semiconductor materials is the focus of current material science research, thereby driving the development of future science and technology, and two-dimensional crystalline nanomaterials are considered to be one of ...

AI Technical Summary

Problems solved by technology

[0005] 1. In the process of preparing two-dimensional VA layered materials by molecular beam epitaxy (MBE), it has the following disadvantages: the control of ultra-high operating conditions is required, the growth conditions are extremely harsh, the growth rate is slow, and the preparation cost is extremely high. high;

[0006] 2. The problems existing in the preparation of two-dimensional VA group layered materials by liquid phase exfoliation are: other auxiliary exfoliation methods are required outside, it is difficult to control the number of layers of two-dimensional materials, and it is impossible to realize the exfoliation of single-layer two-dimensional VA group layered materials

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