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Growth method of Si NWs (at) ZIF-8 core-shell structure

A growth method and core-shell structure technology are applied in the growth field of SiNWs@ZIF-8 core-shell structure to achieve the effects of complete coating, simple preparation process and mild reaction conditions

Active Publication Date: 2022-07-22
KUNMING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The difficulty of this method is that it is difficult for ZIF-8 material to form a heterogeneous structure with good interfacial contact with Si NWs, so it is necessary to explore a method to make ZIF-8 well attached to the surface of Si NWs

Method used

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  • Growth method of Si NWs (at) ZIF-8 core-shell structure
  • Growth method of Si NWs (at) ZIF-8 core-shell structure
  • Growth method of Si NWs (at) ZIF-8 core-shell structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0065] A growth method of Si NWs@ZIF-8 core-shell structure, comprising the following steps:

[0066] S1, silicon wafer cleaning

[0067] S11. Put the silicon wafers into methanol (CH 3 OH) and absolute ethanol (C 2 H 5 OH) in ultrasonic cleaning for 2min to remove oil and organic matter;

[0068] S12, put the above-mentioned silicon wafer into concentrated sulfuric acid (H 2 SO 4 ): hydrogen peroxide (H 2 O 2 )=3:1 (volume ratio) in the mixed solution for 2h, until no more bubbles are generated in the beaker, rinse with deionized water after the end;

[0069] S13, put the above silicon wafer into hydrofluoric acid (HF): deionized water (H 2 O)=1:3 (volume ratio) in the mixed solution for 1min to remove the oxide layer; rinse with deionized water after finishing;

[0070] S14, put the above silicon wafers into methanol (CH 3 OH) and absolute ethanol (C 2 H 5 OH) in ultrasonic cleaning for 2min;

[0071] S15, take out the above-mentioned silicon wafer and put it in...

Embodiment 2

[0092] A growth method of Si NWs@ZIF-8 core-shell structure, comprising the following steps:

[0093] S1, silicon wafer cleaning

[0094] S11. Put the silicon wafers into methanol (CH 3 OH) and absolute ethanol (C 2 H 5 OH) in ultrasonic cleaning for 4min to remove oil and organic matter;

[0095] S12, put the above-mentioned silicon wafer into concentrated sulfuric acid (H 2 SO 4 ): hydrogen peroxide (H 2 O 2 )=3:1 (volume ratio) in the mixed solution for 2h, until no more bubbles are generated in the beaker, rinse with deionized water after the end;

[0096] S13, put the above silicon wafer into hydrofluoric acid (HF): deionized water (H 2 O)=1:3 (volume ratio) in the mixed solution of immersion for 2min to remove the oxide layer; rinse with deionized water after finishing;

[0097] S14, put the above silicon wafers into methanol (CH 3 OH) and absolute ethanol (C 2 H 5 OH) in ultrasonic cleaning for 4min;

[0098] S15, take out the above-mentioned silicon wafer ...

Embodiment 3

[0118] A growth method of Si NWs@ZIF-8 core-shell structure, comprising the following steps:

[0119] S1, silicon wafer cleaning

[0120] S11. Put the silicon wafers into methanol (CH 3 OH) and absolute ethanol (C 2 H 5 OH) in ultrasonic cleaning for 5min to remove oil and organic matter;

[0121] S12, put the above-mentioned silicon wafer into concentrated sulfuric acid (H 2 SO 4 ): hydrogen peroxide (H 2 O 2 )=3:1 (volume ratio) in the mixed solution for 2h, until no more bubbles are generated in the beaker, rinse with deionized water after the end;

[0122] S13, put the above silicon wafer into hydrofluoric acid (HF): deionized water (H 2 O)=1:3 (volume ratio) in the mixed solution of immersion for 2min to remove the oxide layer; rinse with deionized water after finishing;

[0123] S14, put the above silicon wafers into methanol (CH 3 OH) and absolute ethanol (C 2 H 5 OH) in ultrasonic cleaning for 5min;

[0124] S15, take out the above-mentioned silicon wafer ...

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Abstract

The invention discloses a growth method of a Si NWs (at) ZIF-8 core-shell structure. The growth method comprises the following steps: S1, cleaning a silicon wafer; s2, etching a silicon wafer to prepare a Si nanowire; S21, standing the silicon wafer in a mixed solution of silver nitrate and hydrofluoric acid; s22, washing the silicon wafer by-product with distilled water; s23, putting the silicon wafer into concentrated nitric acid to obtain Si NWs; s3, preparing Si NWs (at) ZnO: S31, heating a heating plate, and placing the etched silicon wafer on the heating plate; s32, dropwise adding a zinc acetate solution on the silicon wafer, and heating and evaporating to dryness; s33, the materials are placed in a muffle furnace to be annealed; s34, preparing a mixed solution of a zinc acetate solution, a hexamethylenetetramine solution and polyethyleneimine; s35, putting the etched silicon wafer and the mixed solution into a hydrothermal kettle for heat preservation; s36, the materials are taken out and cleaned; s37, the cleaned material is placed in a muffle furnace for heat preservation, and Si NWs (at) ZnO is obtained; and S4, synthesizing Si NWs (at) ZIF-8. According to the preparation method disclosed by the invention, the ZIF-8 is well attached to the surface of the Si NWs by adopting two-part growth of coating and hydrothermal combination, so that the Si NWs-ZIF-8 core-shell structure is successfully prepared.

Description

technical field [0001] The invention relates to the field of semiconductor energy storage and conversion, in particular to a growth method of a Si NWs@ZIF-8 core-shell structure. Background technique [0002] Silicon (Si) is abundant on Earth and is an ideal candidate for optoelectronic applications. The band gap width of Si is 1.12eV, so it has excellent light absorption properties, which can absorb sunlight from ultraviolet to near-infrared. Si has suitable band gap width and band edge position, but using planar Si as photoelectrode still poses great challenges due to slow kinetics and low active surface area. In particular, one-dimensional silicon nanostructures (Si NWs) or silicon microwires (SiMWs) show great application prospects in the field of semiconductor energy storage and conversion. Compared with bulk materials and zero-dimensional nanostructures, one-dimensional nanostructures not only have a larger specific surface area, but more importantly, they can shorte...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J13/02
CPCB01J13/02
Inventor 胡素娟谢冬雪
Owner KUNMING UNIV
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