Positive photoresist composition and preparation method and application thereof

A technology of positive photoresist and composition, which is applied in the direction of optomechanical equipment, photosensitive materials for optomechanical equipment, optics, etc., and can solve the problems of limiting the application range of photoresist, reducing production efficiency, and a large amount of light energy , achieve excellent physical and chemical properties, improve production efficiency, and have strong photosensitivity

Pending Publication Date: 2022-02-25
SUNTIFIC MATERIALS WEIFANG LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this type of system is a non-chemically amplified photoresist, and the photosensitivity of diazonaphthoquinone (DNQ) is poor, so it requires a large amount of light energy to complete the transformation of the DNQ structure from diss

Method used

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  • Positive photoresist composition and preparation method and application thereof
  • Positive photoresist composition and preparation method and application thereof
  • Positive photoresist composition and preparation method and application thereof

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preparation example Construction

[0055] According to a second aspect of the present invention, a kind of preparation method of above-mentioned positive photoresist composition is provided, comprises the steps:

[0056] Each component is dissolved by a solvent to obtain a positive photoresist composition.

[0057] In a preferred embodiment, the present invention further includes filtration after dissolution.

[0058] The present invention uses a solvent to dissolve each component, and then filters to obtain a positive photoresist composition; wherein, filtering includes but is not limited to filtering with a filter membrane, and the pore size of the filter membrane is 0.01-1 micron, which is typical but not limited The pore size is, for example, 0.01 micron, 0.02 micron, 0.05 micron, 0.1 micron, 0.2 micron, 0.5 micron, 1 micron.

[0059] The preparation method of the positive photoresist composition provided by the invention has simple process and high excellent rate.

[0060] According to a third aspect of ...

Embodiment 1

[0064] The weight ratio of the components of the positive photoresist composition of this embodiment is as follows: After mixing the components, they are fully dissolved with the solvent propylene glycol methyl ether acetate, and then filtered through a filter membrane with a pore size of 0.2 microns to obtain a positive photoresist composition. Photoresist composition, wherein, the structure of the phenolic resin of the present embodiment is: Mw is 3000.

[0065]

[0066]

Embodiment 2

[0068] The weight ratio of the components of the positive photoresist composition of this embodiment is as follows: After mixing the components, they are fully dissolved with the solvent propylene glycol methyl ether acetate, and then filtered through a filter membrane with a pore size of 0.2 microns to obtain a positive photoresist composition. Photoresist composition, wherein, the structure of the phenolic resin of the present embodiment is: Mw is 3000.

[0069] Phenolic Resin 50g Benzomelamine 5g Ethylsulfonic acid 0.5g Acetophenone O-benzoyl oxime 1g Propylene glycol methyl ether acetate 100g

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Abstract

The invention provides a positive photoresist composition and a preparation method and application thereof, and relates to the technical field of photoresist preparation, the positive photoresist composition comprises phenolic resin, a cross-linking agent, an acid catalyst, a photoinduced deactivator and an optional solvent, and the photoinduced deactivator comprises an anionic initiator. The positive photoresist composition belongs to chemical amplification photoresist, the phenolic resin in the positive photoresist composition has excellent physical and chemical properties, proper dissolution rate and good film-forming property, in a non-exposure area, an acid catalyst catalyzes a cross-linking agent to be subjected to a cross-linking reaction with the phenolic resin, and after the positive photoresist composition is exposed by ultraviolet light with the wavelength of 365 nm or 436 nm in an exposure area, the compound generated by the anionic initiator deactivates the acidic catalyst and does not catalyze the cross-linking reaction any more. According to the invention, the technical problem of large exposure dose demand caused by poor photosensitivity of the photoresist is solved, and the technical effects of high photosensitivity of the photoresist, small exposure dose demand, improvement of production efficiency and reduction of production cost are achieved.

Description

technical field [0001] The invention relates to the technical field of photoresist preparation, in particular to a positive photoresist composition and a preparation method and application thereof. Background technique [0002] At present, positive photoresist based on phenolic resin is widely used in the field of 365nm or 436nm photolithography in the market. For example, in the fields of LED chip manufacturing and liquid crystal display, the amount of phenolic positive photoresist is particularly large. [0003] Traditional phenolic positive photoresists generally include the following components: phenolic resin, photosensitizer, solvent and additives, etc., wherein the most common photosensitizer (PAC) is diazonaphthoquinone (DNQ). In the case of exposure, it inhibits dissolution, and promotes dissolution after exposure to 365nm or 436nm ultraviolet light, thereby forming a positive photoresist image. However, this type of system is a non-chemically amplified photoresist...

Claims

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Application Information

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IPC IPC(8): G03F7/039G03F7/004H01L21/027
CPCG03F7/039G03F7/004H01L21/0271
Inventor 周元基
Owner SUNTIFIC MATERIALS WEIFANG LTD
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