Method for forming image sensor

A technology for image sensors and pixel areas, applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., to achieve the effects of improving image quality, reducing production costs, and reducing manufacturing processes

Pending Publication Date: 2022-03-01
HUA HONG SEMICON WUXI LTD
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  • Description
  • Claims
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Problems solved by technology

[0004] However, there are still many problems in the

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  • Method for forming image sensor

Examples

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[0027] As in the context of the background, prior art CMOS image sensors still have many problems during formation. Specific description will be described below.

[0028] In theory, the CMOS image sensor does not produce optical current when there is no light. However, during the existing CIS product manufacturing process, since the photoelectric region is formed by using high-energy ion implantation process, the crystal lattice of the substrate is damaged during ion implantation, which in turn makes a subsequent portion of the pixel point when there is no illumination. The charge is also generated, while the accumulation of charge will produce dark current. For a pixel unit, if its dark current value exceeds the photocurrent generated by capturing light electrons, the pixel unit will be considered white Pixel, so white noise is a pixel unit that is too large.

[0029] On the basis of this, the present invention provides a method of forming an image sensor, by injecting the first ...

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Abstract

A forming method of an image sensor comprises the following steps: providing a substrate which comprises a pixel region and a logic region; first ions are injected into the pixel region, and a plurality of photoelectric regions are formed in the pixel region; a plurality of active regions are formed in the logic region, and grooves are formed between the adjacent active regions; an isolation layer is formed in the groove, a heat treatment process is carried out in the process of forming the isolation layer, and the heat treatment process is used for repairing lattice damage to the substrate when the first ions are injected. First ions are injected into a pixel region, and a plurality of photoelectric regions are formed in the pixel region; and then a heat treatment process in the process of forming the isolation layer is utilized, and the heat treatment process is used for repairing lattice damage to the substrate when the first ions are injected, so that white noise is reduced, and the image quality is improved. In addition, heat treatment processes adopted for lattice damage repair are conventional processes, so that the processes can be effectively reduced, and the production cost is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming an image sensor. Background technique [0002] An image sensor is a semiconductor device that converts an optical image into an electrical signal. Since a CMOS image sensor (CMOS Image Sensor, CIS) has the advantages of low power consumption and high signal-to-noise ratio, it has been widely used in various fields. [0003] The most commonly used Pixel unit in a CMOS image sensor includes a photodiode PD and four MOS transistors, including a transfer transistor TX, a reset transistor RST, a source follower transistor SF, a row selection transistor RS, and a floating diffusion region FD, which can realize photoelectric Control of selection, reset, signal output, signal amplification and readout of diode PD. The principle is that when light irradiates the photodiode PD, the accumulation of photo-generated carriers will occur in the photodio...

Claims

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Application Information

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IPC IPC(8): H01L27/146
CPCH01L27/14689H01L27/14698H01L27/1463
Inventor 李金鹏张栋郑晓辉
Owner HUA HONG SEMICON WUXI LTD
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