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Compositions comprising silacycloalkanes for deposition of silicon-containing films and methods of use thereof

A technology of silacycloalkane and silicon-containing film, which is used in coating, gaseous chemical plating, metal material coating process, etc.

Pending Publication Date: 2022-03-11
VERSUM MATERIALS US LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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  • Compositions comprising silacycloalkanes for deposition of silicon-containing films and methods of use thereof
  • Compositions comprising silacycloalkanes for deposition of silicon-containing films and methods of use thereof
  • Compositions comprising silacycloalkanes for deposition of silicon-containing films and methods of use thereof

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Embodiment

[0067] Flowable chemical vapor deposition (FCVD) films were deposited on medium resistivity (8-12 Ωcm) single crystal silicon wafer substrates and Si patterned wafers. For patterned wafers, the preferred pattern width is 20-100 nm and has an aspect ratio of 5:1-20:1. Deposition was performed on a modified FCVD chamber on an Applied Materials Precision 5000 system using a dual chamber showerhead. The chamber is equipped with direct liquid injection (DLI) delivery capability. The precursor is a liquid and its delivery temperature depends on the boiling point of the precursor. For depositing an initial flowable silicon oxide film, typical liquid precursor flow rates range from about 100 to about 5000 mg / min, preferably 1000 to 2000 mg / min; chamber pressures range from about 0.75-12 Torr, preferably 1-3 Torr. In particular, remote power from 0 to 3000 W was provided by a MKS microwave generator with a frequency of 2.455 GHz and an operating pressure of 2 to 8 Torr. To densify t...

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Abstract

Described herein are compositions and methods of using the same for forming a silicon-containing film (e.g., but not limited to, silicon carbide, silicon oxide, silicon nitride, silicon oxynitride, carbon-doped silicon nitride, or carbon-doped silicon oxide film) on at least one surface of a substrate having surface features. In one aspect, the silicon-containing film is deposited using co-deposition of at least one first compound comprising a C-C double bond or a C-C triple bond.

Description

[0001] Cross References to Related Applications [0002] This application claims priority under 35 U.S.C. § 119(e) to U.S. Provisional Patent Application No. 62 / 878,724, filed July 25, 2019, which is hereby incorporated by reference in its entirety. technical field [0003] Described herein are methods and compositions for depositing flowable, stoichiometric or non-stoichiometric silicon carbide or silicon carbonitride films using a silicon precursor comprising at least one silacycloalkane. More specifically, described herein are deposition processes for depositing dielectric films using silacycloalkane precursors, such as, but not limited to, flowable chemical vapor deposition (FCVD), remote plasma-enhanced chemical vapor deposition (RPCVD), in-situ Assisted remote plasma-enhanced chemical vapor deposition (in-situ assisted RPCVD), plasma-enhanced chemical vapor deposition (PECVD), cyclic remote plasma-enhanced chemical vapor deposition (C-RPCVD) and compositions comprising t...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/448C23C16/04C23C16/30C23C16/32C23C16/34C23C16/40C23C16/452C23C16/50C23C16/56H01L21/02
CPCC23C16/448C23C16/452C23C16/345C23C16/308C23C16/325C23C16/401C23C16/045C23C16/50C23C16/56H01L21/02126H01L21/02167H01L21/02208H01L21/02274C23C16/511C08G77/50C09D183/16
Inventor R·N·弗蒂斯R·G·里德格韦雷新建李明萧满超
Owner VERSUM MATERIALS US LLC