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Preparation method of release-agent-free self-supporting target membrane

A self-supporting, release agent technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problems affecting the accuracy of nuclear test results, contamination impurities and other issues

Pending Publication Date: 2022-03-15
新奥(天津)能源技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the release agent will contaminate the nuclear target and bring impurities during the dissolution process, it will affect the accuracy of the nuclear test results

Method used

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  • Preparation method of release-agent-free self-supporting target membrane
  • Preparation method of release-agent-free self-supporting target membrane
  • Preparation method of release-agent-free self-supporting target membrane

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preparation example Construction

[0043] The invention provides a method for preparing a self-supporting target film without a release agent, the preparation method comprising the steps of:

[0044] Described preparation method comprises the steps:

[0045] (1) The film material is prepared and formed on the substrate by magnetron sputtering under the process conditions of a temperature not higher than 150°C and a power of 100-400 watts to obtain a film-substrate combination;

[0046] Under the above low temperature conditions, the mechanical bonding and van der Waals bonding between the film and the substrate can be mainly used, which can reduce the bonding force between the film and the substrate; under the above high power conditions, due to the increase in the stress of the film itself, it can be further reduced The bonding force between the film layer and the substrate;

[0047] (2) heating the film-substrate assembly obtained in step (1) to an annealing temperature of 400-500° C., annealing for 0.5-2 ho...

Embodiment 1

[0065] This embodiment is used to illustrate the preparation of a self-supporting carbon film with a thickness of 2 microns by the method of the present invention, which specifically includes the following steps:

[0066] (1) Clean the glass substrate with an ultrasonic cleaner.

[0067] (2) A carbon film is prepared on a glass substrate, specifically, by magnetron sputtering, and the process parameters are temperature at room temperature, power 400 watts, and air pressure 0.3 Pa.

[0068] (3) Anneal the glass substrate with the carbon film, specifically, in a vacuum tube furnace, the process parameters are 10°C / min to 400°C, annealing for 1 hour, and 8°C / min to cool down to room temperature.

[0069] (4) Detach the film from the substrate. Specifically, put the glass substrate with the carbon film into a container, slowly add 50° C. aqueous solution to soak the glass to peel off the film.

[0070] (5) Use the target frame to pick up the film layer, and obtain a self-supporti...

Embodiment 2

[0072] This embodiment is used to illustrate the preparation of a self-supporting boron film with a thickness of 0.5 micron by the method of the present invention, which specifically includes the following steps:

[0073] (1) Clean the glass substrate with an ultrasonic cleaner.

[0074] (2) A boron film is prepared on a glass substrate, specifically, by magnetron sputtering, and the process parameters are temperature 100°C, power 200 watts, and air pressure 0.5 Pa.

[0075] (3) Anneal the glass substrate with the boron film, specifically, in a vacuum tube furnace, the process parameters are 7°C / min heating up to 500°C, annealing for 2 hours, and cooling down to room temperature at 9°C / min.

[0076] (4) Detach the film from the substrate. Specifically, put the glass substrate with the boron film into a container, slowly add 70°C aqueous solution to soak the glass to peel off the film.

[0077] (5) Use the target frame to pick up the film layer, and obtain a self-supporting bo...

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Abstract

The invention relates to a membrane material preparation technology, and particularly discloses a preparation method of a release-agent-free self-supporting target membrane. According to the preparation method, the two processes of magnetron sputtering and annealing treatment in the preparation method of the self-supporting target film are adjusted, the film with weak binding force with the substrate is directly prepared on the substrate, then the film is separated from the substrate through mild stress change, participation of a release agent is not needed, the structure of the film is not damaged in the separation process, and therefore the self-supporting target film is obtained. And the preparation of the self-supporting target film without release agent pollution is realized. And the influence of pollution of a release agent in a traditional preparation method on the accuracy of a nuclear test result when the self-supporting target membrane is used as a nuclear target is avoided.

Description

technical field [0001] The invention relates to a film material preparation technology, in particular to a preparation method of a self-supporting target film without a release agent. Background technique [0002] A self-supporting target, as opposed to a lined target, refers to a target that is not supported by a carrier during use, and its thickness ranges from tens of nanometers to tens of microns. In many nuclear science researches, especially in low-energy nuclear physics, laser nuclear physics, atomic and molecular physics, astrophysical nuclear physics and nuclear chemistry experiments, self-supporting targets are required as target membranes. [0003] The preparation of a self-supporting target film is usually to prepare a layer of release agent on the substrate in advance, and then prepare a film of a certain thickness on it, and finally dissolve the release agent in the solution to peel off the film, and then use the target frame to Thin film harvesting yields a s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/58C23C14/18
CPCC23C14/35C23C14/5806C23C14/0005C23C14/185
Inventor 赵冠超魏彦存耿金峰孟垂舟陈培培
Owner 新奥(天津)能源技术有限公司