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Preparation method of optical detection device

A light detection and device technology, applied in semiconductor devices, electrical components, final product manufacturing, etc., can solve problems such as poor photoelectric performance and not photoelectric materials, and achieve low cost, simple manufacturing method, and high repeatability of device performance.

Pending Publication Date: 2022-03-15
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the material has poor photoelectric properties and is not a good photoelectric material.

Method used

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  • Preparation method of optical detection device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Step (1) Put the cuprous phosphide powder or block into a corundum boat with a size of 0.8cm×0.6cm×6cm, then transfer it into a corundum tube with a diameter of 1 inch, and place it at the mouth of the corundum tube at an angle of 45° A silicon wafer with a size of 2.5-3.5 cm and an oxide layer grown on the surface; vacuumize, fill with argon gas of 1 atmosphere, and then seal both ends of the corundum tube;

[0021] Step (2). Heat the middle of the corundum tube to 700°C through a tube furnace, the temperature of the corundum tube mouth is 550°C, and the heating rate is 10°C / min; the holding time is 10min; then naturally cool to room temperature, and then take out the corundum tube The product of the mouth is obtained to obtain a two-dimensional cuprous phosphide film grown on the surface of the substrate.

[0022] The two-dimensional cuprous phosphide film grown on the surface of the substrate is placed on the sample holder of the thermal evaporation evaporation equip...

Embodiment 2

[0025] Step (1) Put the cuprous phosphide powder or block into a corundum boat with a size of 0.8cm×0.6cm×6cm, then transfer it into a corundum tube with a diameter of 1 inch, and place it at the mouth of the corundum tube at an angle of 45° A silicon wafer with an oxide layer grown on the surface with a size of 1.5-2.0 cm; vacuumized, filled with argon gas of 1 atmosphere, and then sealed at both ends of the corundum tube;

[0026] Step (2). Heat the middle of the corundum tube to 850°C through a tube furnace, the temperature of the corundum tube mouth is 700°C, and the heating rate is 10°C / min; the holding time is 30min; then naturally cool to room temperature, and then take out the corundum tube The product of the mouth is obtained to obtain a two-dimensional cuprous phosphide film grown on the surface of the substrate.

[0027] The two-dimensional cuprous phosphide film grown on the surface of the substrate is placed on the sample holder of the thermal evaporation evaporat...

Embodiment 3

[0029] Put the cuprous phosphide powder or block into a corundum boat with a size of 0.8cm×0.6cm×6cm, then transfer it into a corundum tube with a diameter of 1 inch, and put it into a corundum tube with a size of 1.5~ A silicon wafer with an oxide layer grown on the surface of 2.0 cm; evacuated, filled with argon gas of 1 atmosphere, and then sealed at both ends of the corundum tube;

[0030] Step (2). Heat the middle of the corundum tube to 800°C through a tube furnace, the temperature of the corundum tube mouth is 650°C, and the heating rate is 10°C / min; the holding time is 25min; then naturally cool to room temperature, and then take out the corundum tube The product of the mouth is obtained to obtain a two-dimensional cuprous phosphide film grown on the surface of the substrate.

[0031] The copper phosphide two-dimensional thin film grown on the surface of the substrate is placed on the sample holder of the thermal evaporation evaporation equipment, and the vacuum is pum...

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Abstract

The preparation method comprises the following steps: placing a cuprous phosphide two-dimensional film growing on the surface of a substrate on a sample seat of a thermal evaporation instrument, and depositing a silver electrode on the surface of cuprous phosphide through a mask method; a silver electrode is deposited on the surface of cuprous phosphide through a mask method, and the method specifically comprises the steps that firstly, vacuumizing is conducted, and when the vacuum degree of a cavity is lower than 10 pa, a substrate is heated to 150-350 DEG C; when the reading of the vacuum gauge is lower than 4.0 * 10 <-3 > Pa, starting to evaporate the silver film; the evaporation rate is controlled by adjusting the evaporation current, and the evaporation rate is adjusted to 1.8-2.2 A / s; and when the thickness of the thin film is increased to 200-500 nanometers, evaporation is stopped, and when the thin film is cooled to the room temperature, the device is obtained. The Schottky diode is formed by combining the cuprous phosphide and the metal material, and the Schottky diode is rich in required raw materials, simple to prepare, low in cost and good in visible light and near-infrared light effect rate.

Description

technical field [0001] The invention belongs to the technical field of materials and devices, and in particular relates to a preparation method of a photodetection device. Background technique [0002] Cuprous phosphide is often used in copper solder, and the research on its optical, thermal and electrical properties is relatively lagging behind. Research on the photothermoelectric properties of this material will expand its application field. Cuprous phosphide is a p-type semiconductor material that can absorb light and produce photoconductivity. Schottky diodes made of it or pn-junction diodes made with n-type materials can produce photoelectric effects and generate photovoltaics when illuminated. Phenomenon. However, the material has poor photoelectric properties and is not a good photoelectric material. After the cuprous phosphide is illuminated, the energy that can absorb light is converted into heat energy. This patent uses this property and combines the performance...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/032H01L31/0352H01L31/102H01L31/18
CPCH01L31/022408H01L31/032H01L31/035272H01L31/102H01L31/18Y02P70/50
Inventor 彭雪吕燕飞蔡庆锋赵士超
Owner HANGZHOU DIANZI UNIV
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