3D NAND memory based on two-dimensional material and preparation method thereof

A 3DNAND, two-dimensional material technology, applied in the semiconductor field, can solve the problems of different memory cell threshold voltage fluctuations, memory cell on-state current reduction, easy to cause reliability problems, etc., to achieve improved storage density, high on-state current, high The effect of integration

Pending Publication Date: 2022-03-18
SHANXI UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0004] However, polysilicon material is used as the channel layer because there are crystal boundaries in polysilicon, which will generate charge traps in the channel layer, so that as the number of stacked layers of word lines increases, the on-state current of the memory cell will increase with the number of stacked layers. increase and decrease rapidly, which can lead to dyslexia
[0005] When pol

Method used

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  • 3D NAND memory based on two-dimensional material and preparation method thereof
  • 3D NAND memory based on two-dimensional material and preparation method thereof
  • 3D NAND memory based on two-dimensional material and preparation method thereof

Examples

Experimental program
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Example Embodiment

[0035] Example 1

[0036] Such as figure 1 , figure 2 As shown, a 3D NAND memory based on a two-dimensional material comprising a substrate 101, a laminated structure 102, a first cyclic channel 105, a second cyclic channel 106, a channel hole 107, a circular hole 108 ;

[0037] The laminated structure 102 is located on the upper surface of the substrate, which is composed of a plurality of alternating insulating layers 104 and conductive layer 103, such as 32 layers, 64 layers, 256 layers, and the like.

[0038] The conductive layer 103 is located on the upper surface of the substrate 101, and the first cyclic channel 105, the second cyclic channel 106, the channel hole 107, and The second cyclic channel 106 is in communication with the channel hole 107, the first loop channel 105, the second cyclic channel 106 filled an insulative medium, the channel hole 107 filled a semiconductor two-dimensional material. The circular hole 108 is etched on the semiconductor two-dimensional mat...

Example Embodiment

[0043] Example 2

[0044] Such as image 3 As shown, a method of preparing a 3D NAND memory based on a two-dimensional material, comprising the steps of:

[0045] Step 1, prepare the substrate 101, in the upper surface of the substrate 101, the metal Mo is grown, and the Mote of 1T metal phase is generated by the hormone. 2 The conductive layer 103 is constituted, and then a layer of silicon oxide layer is prepared by depositing a thin film deposition process in the conductive layer 103. As the insulating layer 104, it is sequentially grown, and the laminated structure 102 between the conductive layer 103 and the insulating layer 104 is obtained. Such as Figure 4 The structure shown;

[0046] Step 2, the obtained laminated structure 102 performs the first annular etching, and fill the insulating medium in the etching channel to obtain 1T Mote in the horizontal direction. 2 Gate layer and barrier layer of metal properties;

[0047] This step is to etch in the vertical direction of t...

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Abstract

The invention belongs to the technical field of semiconductors, and particularly relates to a 3D NAND memory based on a two-dimensional material and a preparation method thereof. In order to solve the problem that an existing 3D NAND memory is poor in electrical performance, a stacked structure of the memory is located on the upper surface of a substrate and is composed of a plurality of insulating layers and conductive layers which are alternately stacked, the conductive layers are located on the upper surface of the substrate, and the conductive layers are located on the upper surface of the substrate. A first annular channel, a second annular channel and a channel hole are concentrically etched on the laminated structure from outside to outside, the second annular channel is communicated with the channel hole, the first annular channel and the second annular channel are filled with insulating media, the channel hole is filled with a semiconductor two-dimensional material, a round hole is etched on the semiconductor two-dimensional material, and the round hole is filled with insulating media. The preparation method comprises the following steps: taking a substrate as a base to obtain a laminated structure with alternate conducting layers and insulating layers, then carrying out two times of annular etching and circular hole etching, and filling corresponding materials in corresponding channels.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a 3D NAND memory based on two-dimensional materials and a preparation method thereof. Background technique [0002] 3D NAND memory is a flash memory device with a three-bit stacked structure. Multi-layer data storage units are stacked vertically, and its storage core area is composed of vertical channel tubes with alternately stacked metal gate layers and insulating layers. This technology can construct a storage device with a higher storage capacity, which can accommodate a higher storage capacity in a smaller space. Under the same area condition, the more vertically stacked metal gates, the higher the storage density and capacity of the device. bigger. [0003] Existing 3D NAND memory has problems of poor electrical performance, for example, the on-state current is small and unstable, and the threshold voltage fluctuates greatly. The reason why the 3D NAND ...

Claims

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Application Information

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IPC IPC(8): H01L27/1157H01L27/11575H01L27/11582
CPCH10B43/50H10B43/35H10B43/27
Inventor 韩拯陈茂林任乃杰
Owner SHANXI UNIV
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