Preparation method of thin film and light emitting diode
A technology for light-emitting diodes and thin films, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, and electrical solid-state devices. , The effect of improving the interface contact performance and reducing the interface resistance
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Example Embodiment
[0029] Such as figure 1 As shown, the present application embodiment provides a method of preparing a film, comprising the steps of:
[0030] S01, providing dry films and inert atmospheres, inert atmospheres are doped with aromatic compounds, and aromatic compounds can dissolve dry film;
[0031] S02, the dry film is allowed to stand in an inert atmosphere, heat treatment or ultraviolet light irradiation treatment to obtain the film.
[0032] The preparation method of the film provided by the present application, the inert atmosphere is doped with an aromatic compound that dissolves the dry film, and the dry film is allowed to stand in an inert atmosphere doped with an aromatic compound, so that the aromatic compound is infiltrating The large particulate matter of the dispersed dry film can be further dissolved during the dry film, thereby increasing the uniformity of the surface particles of the film, reducing the roughness of the surface of the film, and then obtaining a surface...
Example Embodiment
[0074] Example 1
[0075] This embodiment provides a top-emitted main quantum dot light emitting diode, and the preparation method thereof comprises:
[0076] (1) On the ITO substrate, spin coating PEDOT: PSS, rotational speed 5000, time 30 seconds, then heated 150 ° C for 15 minutes;
[0077] (2) In the PEDOT: PSS layer, TFB (8 mg / ml), rotation speed 3000, time 30 seconds, and heated at 80 ° C for 10 minutes;
[0078] (3) Put the device prepared by step (2) in a closed container to stand for 50 min, and the atmosphere environment in the sealed container is an Ar atmosphere (volume concentration of 95%) and gaseous chlorobenzene (volume concentration 5%) ,Such as Figure 4 Indicated;
[0079] (4) Transfer the device prepared by step (3) to a glove box full of Ar atmosphere;
[0080] (5) Spin coating in the TFB layer (20 mg / ml), speed 2000, and time 30 seconds;
[0081] (6) Spin ZnO (30 mg / ml), rotational speed 3000, and 30 minutes after heating at 80 ° C after 30 minutes.
[...
Example Embodiment
[0084] Example 2
[0085]This embodiment provides a top-emitted atrial quantum point light emitting diode, which is the substantially identical method of Example 1, and the difference is that in step (2), in the mixed atmosphere filled with gaseous chlorobenzene and Ar gas. In a glove box, a TFB was spin coated on the PEDOT: PSS layer, wherein the volume concentration of gaseous chlorobenzene in a mixed atmosphere was 0.5%.
PUM
Property | Measurement | Unit |
---|---|---|
Thickness | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2023 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap