Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of thin film and light emitting diode

A technology for light-emitting diodes and thin films, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, and electrical solid-state devices. , The effect of improving the interface contact performance and reducing the interface resistance

Pending Publication Date: 2022-03-18
TCL CORPORATION
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of this application is to provide a preparation method of a thin film, a preparation method of a light-emitting diode and a light-emitting diode, aiming at solving the problem of the imbalance between the hole transport efficiency and the electron transport rate of the existing light-emitting diodes

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of thin film and light emitting diode
  • Preparation method of thin film and light emitting diode
  • Preparation method of thin film and light emitting diode

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0029] Such as figure 1 As shown, the embodiment of the present application provides a method for preparing a thin film, comprising the following steps:

[0030] S01, provide a dry film and an inert atmosphere, the inert atmosphere is doped with aromatic compounds, and the aromatic compounds can dissolve the dry film;

[0031] S02, subjecting the dry film to static treatment, heat treatment or ultraviolet light irradiation treatment under an inert atmosphere to obtain the film.

[0032] In the preparation method of the film provided in the examples of the present application, the inert atmosphere is doped with aromatic compounds capable of dissolving the dry film, and the dry film is left to stand under the inert atmosphere doped with aromatic compounds, so that the aromatic compounds are wetted In the process of dry film, it can further dissolve and disperse the large particles on the surface of the dry film, thereby improving the uniformity of the particles on the film surf...

Embodiment 1

[0075] This embodiment provides a top-emitting positive quantum dot light-emitting diode, and its preparation method includes:

[0076] (1) On the ITO substrate, spin-coat PEDOT:PSS at a speed of 5000 for 30 seconds, then heat at 150°C for 15 minutes;

[0077] (2) Spin-coat TFB (8mg / mL) on the PEDOT:PSS layer at a speed of 3000 for 30 seconds, then heat at 80°C for 10 minutes;

[0078] (3) The device prepared in step (2) is put into an airtight container and left to stand for 50min, and the atmosphere environment in the airtight container is Ar atmosphere (volume concentration is 95%) and gaseous chlorobenzene (volume concentration 5%) ,Such as Figure 4 shown;

[0079] (4) the device prepared by step (3) is transferred to a glove box full of Ar atmosphere;

[0080] (5) Spin-coat quantum dots (20mg / mL) on the TFB layer at a speed of 2000 for 30 seconds;

[0081] (6) Spin-coat ZnO (30mg / mL) on the quantum dot layer at a speed of 3000 for 30 seconds, then heat at 80°C for 30...

Embodiment 2

[0085]This embodiment provides a top-emitting upright quantum dot light-emitting diode, the preparation method of which is basically the same as that of Embodiment 1, the difference is that in step (2), in the mixed atmosphere filled with gaseous chlorobenzene and Ar gas TFB was spin-coated on the PEDOT:PSS layer in a glove box, where the volume concentration of gaseous chlorobenzene in the mixed atmosphere was 0.5%.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to the technical field of display, and provides a preparation method of a thin film and a light emitting diode. The preparation method of the thin film comprises the steps that a dry film and an inert atmosphere are provided, the inert atmosphere is doped with an aromatic compound, and the aromatic compound can dissolve the dry film; and carrying out standing treatment, heating treatment or ultraviolet irradiation treatment on the dry film in an inert atmosphere. Through the method, the aromatic compound can further dissolve and disperse large-particle substances on the surface of the dry film in the infiltration process, so that the uniformity of particles on the surface of the film is improved, the roughness of the surface of the film is reduced, and the film with the flat surface is obtained. When the compound is applied to a hole function layer of a light-emitting diode, film morphology of the hole function layer can be improved, interface resistance of the hole function layer and a light-emitting layer can be reduced, hole transmission efficiency of a device can be improved, hole transmission efficiency and electron transmission efficiency of the device can be effectively balanced, photoelectric performance of the device can be improved, and service life of the device can be prolonged.

Description

technical field [0001] The present application belongs to the field of display technology, and in particular relates to a thin film preparation method and a light emitting diode. Background technique [0002] QLED (Quantum Dots Light-Emitting Diode, Quantum Dot Light-Emitting Diode), is an emerging display device, the structure is similar to OLED (Organic Light-Emitting Diode, Organic Light-Emitting Display), that is, it mainly consists of a hole transport layer, a light-emitting layer and Sandwich structure composed of electron transport layer. This is a new technology between liquid crystal and OLED. The core technology of QLED is "Quantum Dot (quantum dot)". Atoms make up. As early as 1983, scientists at Bell Laboratories in the United States conducted in-depth research on it, and a few years later, physicist Mark Reed of Yale University officially named it "quantum dots". This substance has a very special property: when the quantum dot is stimulated by light, it will ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L51/56H01L51/50
CPCH10K71/15H10K71/12H10K50/155
Inventor 敖资通严怡然杨帆赖学森洪佳婷张建新
Owner TCL CORPORATION
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com