Preparation method of thin film and light emitting diode

A technology for light-emitting diodes and thin films, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, and electrical solid-state devices. , The effect of improving the interface contact performance and reducing the interface resistance

Pending Publication Date: 2022-03-18
TCL CORPORATION
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of this application is to provide a preparation method of a thin film, a preparation method of a light-emitting diode and a light-emitting d

Method used

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  • Preparation method of thin film and light emitting diode
  • Preparation method of thin film and light emitting diode
  • Preparation method of thin film and light emitting diode

Examples

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Example Embodiment

[0029] Such as figure 1 As shown, the present application embodiment provides a method of preparing a film, comprising the steps of:

[0030] S01, providing dry films and inert atmospheres, inert atmospheres are doped with aromatic compounds, and aromatic compounds can dissolve dry film;

[0031] S02, the dry film is allowed to stand in an inert atmosphere, heat treatment or ultraviolet light irradiation treatment to obtain the film.

[0032] The preparation method of the film provided by the present application, the inert atmosphere is doped with an aromatic compound that dissolves the dry film, and the dry film is allowed to stand in an inert atmosphere doped with an aromatic compound, so that the aromatic compound is infiltrating The large particulate matter of the dispersed dry film can be further dissolved during the dry film, thereby increasing the uniformity of the surface particles of the film, reducing the roughness of the surface of the film, and then obtaining a surface...

Example Embodiment

[0074] Example 1

[0075] This embodiment provides a top-emitted main quantum dot light emitting diode, and the preparation method thereof comprises:

[0076] (1) On the ITO substrate, spin coating PEDOT: PSS, rotational speed 5000, time 30 seconds, then heated 150 ° C for 15 minutes;

[0077] (2) In the PEDOT: PSS layer, TFB (8 mg / ml), rotation speed 3000, time 30 seconds, and heated at 80 ° C for 10 minutes;

[0078] (3) Put the device prepared by step (2) in a closed container to stand for 50 min, and the atmosphere environment in the sealed container is an Ar atmosphere (volume concentration of 95%) and gaseous chlorobenzene (volume concentration 5%) ,Such as Figure 4 Indicated;

[0079] (4) Transfer the device prepared by step (3) to a glove box full of Ar atmosphere;

[0080] (5) Spin coating in the TFB layer (20 mg / ml), speed 2000, and time 30 seconds;

[0081] (6) Spin ZnO (30 mg / ml), rotational speed 3000, and 30 minutes after heating at 80 ° C after 30 minutes.

[...

Example Embodiment

[0084] Example 2

[0085]This embodiment provides a top-emitted atrial quantum point light emitting diode, which is the substantially identical method of Example 1, and the difference is that in step (2), in the mixed atmosphere filled with gaseous chlorobenzene and Ar gas. In a glove box, a TFB was spin coated on the PEDOT: PSS layer, wherein the volume concentration of gaseous chlorobenzene in a mixed atmosphere was 0.5%.

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Abstract

The invention relates to the technical field of display, and provides a preparation method of a thin film and a light emitting diode. The preparation method of the thin film comprises the steps that a dry film and an inert atmosphere are provided, the inert atmosphere is doped with an aromatic compound, and the aromatic compound can dissolve the dry film; and carrying out standing treatment, heating treatment or ultraviolet irradiation treatment on the dry film in an inert atmosphere. Through the method, the aromatic compound can further dissolve and disperse large-particle substances on the surface of the dry film in the infiltration process, so that the uniformity of particles on the surface of the film is improved, the roughness of the surface of the film is reduced, and the film with the flat surface is obtained. When the compound is applied to a hole function layer of a light-emitting diode, film morphology of the hole function layer can be improved, interface resistance of the hole function layer and a light-emitting layer can be reduced, hole transmission efficiency of a device can be improved, hole transmission efficiency and electron transmission efficiency of the device can be effectively balanced, photoelectric performance of the device can be improved, and service life of the device can be prolonged.

Description

technical field [0001] The present application belongs to the field of display technology, and in particular relates to a thin film preparation method and a light emitting diode. Background technique [0002] QLED (Quantum Dots Light-Emitting Diode, Quantum Dot Light-Emitting Diode), is an emerging display device, the structure is similar to OLED (Organic Light-Emitting Diode, Organic Light-Emitting Display), that is, it mainly consists of a hole transport layer, a light-emitting layer and Sandwich structure composed of electron transport layer. This is a new technology between liquid crystal and OLED. The core technology of QLED is "Quantum Dot (quantum dot)". Atoms make up. As early as 1983, scientists at Bell Laboratories in the United States conducted in-depth research on it, and a few years later, physicist Mark Reed of Yale University officially named it "quantum dots". This substance has a very special property: when the quantum dot is stimulated by light, it will ...

Claims

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Application Information

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IPC IPC(8): H01L51/56H01L51/50
CPCH10K71/15H10K71/12H10K50/155
Inventor 敖资通严怡然杨帆赖学森洪佳婷张建新
Owner TCL CORPORATION
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