38results about How to "Improve hole transport efficiency" patented technology

The invention discloses a perovskite solar cell based on a PVA modified hole transport layer. The perovskite solar cell comprises a lower transparent electrode layer and an upper electrode layer, wherein five functional layers are clamped between the lower transparent electrode layer and the upper electrode layer; the five functional layers comprise a hole transport layer, a PVA interface modification layer, a perovskite active layer, an electron transfer layer and a buffer layer from bottom to top in sequence; and the hole transport layer, the PVA interface modification layer, the perovskiteactive layer and the electron transfer layer are prepared into a film through a low-temperature solution method. The thin film is prepared by using the low-temperature solution method, the technological conditions are reasonably controlled, and the PVA modification layer is added between a PEDOT:PSS layer and a perovskite layer, the perovskite surface wettability is improved effectively, the holetransport efficiency is improved, the perovskite thin film is obtained continuously and uniformly, the quality of a perovskite absorbed layer is improved, and the obtained perovskite solar cell is high in photovoltaic conversion efficiency and high in stability.

The invention provides an aromatic amine compound and an organic light-emitting device thereof, and relates to the technical field of organic photoelectric materials. An aromatic amine main body structure is connected with three substituted or non-substituted 3,5-diphenylbenzene group to obtain the aromatic amine compound, the aromatic amine compound has good hole transport ability, and is high inreflectivity, good in film-forming property and good in thermal stability, synthesis is simple and is easy to operate, the aromatic amine compound can be applied to the organic light-emitting deviceand serves as a hole transport layer and/or a covering layer, the problems that the organic light-emitting device is severe in light loss and low in light emitting efficiency, heat of the device is accumulated, the efficiency of the device is severe in roll-off, and the service life is short are solved, and the organic light-emitting device has the advantages of high light-emitting efficiency andlong service life.

The invention discloses a light-emitting auxiliary material. The structural general formula of the light-emitting auxiliary material is shown as a chemical formula I. The invention also discloses a preparation method of the light-emitting auxiliary material and an application of the light-emitting auxiliary material in an organic light-emitting device. The organic light-emitting device prepared from the light-emitting auxiliary material provided by the invention has the characteristics of low driving voltage, high light-emitting efficiency and long service life.

Belonging to the technical field of photoelectric material applied science and technology, the invention in particular relates to a triarylamine derivative, a preparation method and application thereof. The triarylamine derivative provided by the invention adopts triarylamine and fluorenocarbazole as the basic structural unit, and after modification, an asymmetric structure can be obtained so as to compose compounds rich in holes and with high glass transition temperature. When the compounds are used as a hole transport material, compared with the commonly used hole transport material like N,N'-diphenyl-N, N'-bis(3-methylphenyl)-1, 1'-biphenyl-4, 4'-diamine (TPD) in the prior art, the hole transport ability is significantly improved, in OLEDs, the series of compounds have significantly improved starting voltage and glass transition temperature compared with the traditional hole transport materials, and are ideal hole transport materials. In addition, when the series of compounds are used as a light-emitting layer, the efficiency of OLEDs is greatly improved, and the series of compounds are ideal light-emitting layer materials.

The invention relates to a nitrogen-containing compound, and an electronic component and an electronic device comprising the same. The nitrogen-containing compound contains fluorenyl, benzocycloalkyl with rich electron density is introduced to the 9 site of the fluorenyl, and the nitrogen-containing compound is applied to the organic electroluminescent device and can remarkably improve the performance of the device.

The invention discloses a nanometer material and a preparation method thereof, and a quantum dot light emitting diode. The nanometer material comprises MoO3 nanoparticles and MoS2 nanosheets, and theMoS2 nanosheets are combined on the surfaces of the MoO3 nanoparticles. The MoS2 nanosheets and the MoO3 nanoparticles have a synergistic effect, so that the hole transport efficiency can be improved,and the light emitting efficiency and performances of the quantum dot light emitting diode are improved.

The invention provides an organic hole transport material, a preparation method and applications thereof. The organic hole transport material is one or a plurality of materials selected from triarylamine-thiophene system compounds, wherein the structure is represented by a formula I, R<1>, R<2>, R<3>, R<4>, R<5>, R<6>, R<7>, R<8> and R<9> are respectively and independently selected from a hydrogenatom, a halogen atom, a formyl group, a carboxyl group, a C1-C6 substituted or unsubstituted alkyl group, a C2-C5 substituted or unsubstituted alkenyl group, a C3-C10 substituted or unsubstituted cycloalkyl group and a C6-C10 aryl group. By adopting the organic hole transport material, the problems of poor hole transport capacity, low glass-transition temperature and poor film-forming property ofthe hole transport material in the prior art are solved.

The invention provides a quantum dot light-emitting diode, which comprises an anode and a cathode which are oppositely arranged, a quantum dot luminescent layer arranged between the anode and the cathode, and a hole transport layer arranged between the anode and the quantum dot luminescent layer, wherein the hole transport layer is made of nickel oxide nanoparticles and carbon quantum dots, and the nickel oxide nanoparticles and the carbon quantum dots are connected through ester groups.

The invention relates to the technical field of display, and provides a preparation method of a thin film and a light emitting diode. The preparation method of the thin film comprises the steps that dispersion liquid, a matrix and a first inert gas atmosphere are provided, the dispersion liquid comprises a p-type semiconductor material, the first inert gas atmosphere is doped with an aromatic compound, and the aromatic compound can disperse or dissolve the p-type semiconductor material; and performing film forming treatment on the dispersion liquid on a substrate in a first inert gas atmosphere to form a thin film. The thin film prepared by the method has a flat and compact surface, and when the thin film is applied to a hole function layer of a light-emitting diode, the thin film morphology of the hole function layer can be improved, and the interface resistance of the hole function layer and a light-emitting layer can be reduced, so that the hole transmission efficiency of a device is improved, and the hole transmission efficiency and electron transmission efficiency of the device are effectively balanced; and the photoelectric property and the service life of the device are improved.

The invention discloses a D-A-pi-A-D type fluorescent compound and a preparation method thereof, wherein the structural formula of the D-A-pi-A-D type fluorescent compound is shown in the specification, wherein methoxytriphenylamine is used as an electron donor D, benzothiadiazole is used as an electron acceptor A, and carbazole is a pi bridge. The D-A-pi-A-D type fluorescent compound disclosed by the invention has the advantages that the energy level is easy to adjust and the pi conjugate length is easy to prolong so as to improve the charge transport property, has good symmetry and higher thermal stability and morphological stability, is an excellent fluorescent compound, and can be applied to perovskite solar cells (PSCs) as a hole transport material.

The invention discloses a quantum dot light emitting diode and a preparation method thereof. The preparation method comprises the following steps: forming a hole transport layer on an anode, wherein the hole transport layer comprises a TFB; covering the hole transport layer with a layer of treatment liquid, and carrying out heating treatment; wherein the treatment liquid comprises a halogen element-containing compound; forming a quantum dot light-emitting layer on the processed hole transport layer; and forming a cathode on the quantum dot light-emitting layer to obtain the quantum dot light-emitting diode. The surface of the TFB hole transport layer is post-processed by using the halogen element-containing compound, and due to the existence of halogen, the HOMO energy level of the TFB can be reduced, so that the interface potential barrier between the TFB and the quantum dots is reduced, the transmission capability of holes from the TFB to the quantum dots is improved, the overall hole transport efficiency of the device is improved, and the luminous efficiency of the device is improved; meanwhile, damage to a functional layer in the device is reduced, and the service life of the device is prolonged.

The invention discloses an organic electroluminescence device and a preparation method thereof. The organic electroluminescence device comprises a substrate layer, an anode layer, an organic functional layer and a cathode layer which are laminated and combined in turn. The organic functional layer comprises a hole transmission layer and a light-emitting layer which is driven to emit light by an external power supply. The hole transmission layer is laminated and combined between the anode layer and the light-emitting layer. Mass percentage of 12-10% of cuprous iodide is doped in the hole transmission layer. The preparation method of the organic electroluminescence device comprises steps that a substrate is acquired, the anode layer is prepared, the organic functional layer is prepared and the cathode layer is prepared, etc. The organic electroluminescence device is high in light emission efficiency, low in starting voltage and long in the service life. The preparation method of the organic electroluminescence device is simple in technology, conditions are easy to control and product qualified rate is high so that production efficiency is effectively enhanced, and thus the organic electroluminescence device is suitable for industrialized production.