A quantum dot light-emitting diode and its preparation method

A quantum dot light-emitting and diode technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of low hole transmission efficiency, poor device performance, and uneven hole-electron charge transmission, etc., to achieve Effects of improving hole transport efficiency, improving luminous efficiency, and improving hole mobility

Active Publication Date: 2021-07-16
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a quantum dot light-emitting diode and its preparation method, aiming at solving the problems of the existing metal oxides as hole-transport materials, which have low hole-transport efficiency and hole- Poor device performance due to uneven electron charge transport

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  • A quantum dot light-emitting diode and its preparation method

Examples

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Effect test

Embodiment 1

[0048] Embodiment 1: The following takes the preparation of a hole transport layer using molybdenum oxide and initial black phosphorus nanomaterials as an example for a detailed introduction:

[0049] Put the initial black phosphorus nanomaterials in the air and irradiate them with ultraviolet light for 4 minutes to prepare black phosphorus nanomaterials, then disperse molybdenum oxide with a particle size below 100nm in ethanol (80mg / mL) and stir well, and take the thickness Black phosphorus nanomaterials with a size below 10nm are uniformly dispersed in molybdenum oxide ethanol solution, wherein the mass ratio of black phosphorus nanomaterials to molybdenum oxide is 2.0%, stirred at a rate of 3000rpm / min for 30 minutes until the solution is completely uniform, and prepared mixed solution;

[0050] The mixed solution was spin-coated on the anode substrate, heated to 150° C. on a heating platform and kept for 15 minutes to form a hole transport layer.

Embodiment 2

[0051] Embodiment 2: The following uses tungsten oxide and initial black phosphorus nanomaterials to prepare a black hole transport layer as an example for detailed introduction:

[0052] Place the initial black phosphorus nanomaterials in the air and irradiate them with ultraviolet light for 3 minutes to prepare black phosphorus nanomaterials, then disperse tungsten oxide with a particle size below 100nm in methanol (100mg / mL) and stir thoroughly, and take the thickness Black phosphorus nanomaterials below 10nm are uniformly dispersed in tungsten oxide methanol solution, wherein the mass ratio of black phosphorus nanomaterials to tungsten oxide is 2.0%, stirred at a rate of 3000rpm / min for 30 minutes until the solution is completely uniform, and a mixed liquid;

[0053] The mixed solution was spin-coated on the anode substrate, heated to 150° C. on a heating platform and kept for 15 minutes to form a hole transport layer.

Embodiment 3

[0054] Embodiment 3: The following takes the use of nickel oxide and initial black phosphorus nanomaterials to prepare a hole transport layer as an example for detailed introduction:

[0055] Put the initial black phosphorus nanomaterials in the air and irradiate them with ultraviolet light for 5 minutes to prepare the black phosphorus nanomaterials, then disperse nickel oxide with a particle size below 100nm in ethanol (60mg / mL) and stir well, take Black phosphorus nanomaterials with a thickness of less than 10nm are uniformly dispersed in a nickel oxide solution, wherein the mass ratio of black phosphorus nanomaterials to nickel oxide is 2.0%, and stirred at a rate of 3000rpm / min for 30 minutes until the solution is completely uniform. mixed solution;

[0056] The mixed solution was spin-coated on the anode substrate, heated to 110° C. on a heating platform and kept for 15 minutes to form a hole transport layer.

[0057] In summary, the present invention provides a quantum ...

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Abstract

The invention discloses a quantum dot light-emitting diode and a preparation method thereof. The quantum dot light-emitting diode comprises: an anode, a cathode, a quantum dot light-emitting layer arranged between the anode and the cathode, and a quantum dot light-emitting layer arranged between the anode and the quantum dot. A hole transport layer between layers, wherein the hole transport layer includes metal oxide nanoparticles and black phosphorus nanomaterials, the surface of the black phosphorus nanomaterials contains P-O-P bonds, and the black phosphorus nanomaterials The oxygen element in the P‑O‑P bond on the surface coordinates with the metal element in the metal oxide nanoparticles. In the hole transport layer of the present invention, by dispersing the black phosphorus nanomaterial between the metal oxide nanoparticles, the hole mobility of the metal oxide nanoparticles can be significantly improved, thereby improving the hole transport efficiency of the hole transport layer, and further Improve the luminous efficiency of quantum dot light-emitting diodes.

Description

technical field [0001] The invention relates to the field of quantum dot light emitting devices, in particular to a quantum dot light emitting diode and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diodes have the advantages of continuously adjustable spectrum, narrow luminous spectrum, and high quantum efficiency. They are a display technology with great potential and have great application potential in the display field. At present, the efficiency and service life of quantum dot light-emitting diodes are limited by materials, and there is no major breakthrough. Among them, the materials of electron transport layer and hole transport layer have an important impact on the luminous efficiency of quantum dot light-emitting diodes. [0003] In the current common quantum dot light-emitting diodes, commonly used organic polymers (such as PEDOT:PSS) and metal oxides (such as NiO, MoO 3 , V 2 o 5 、WO 3 etc.) as hole transport layer mate...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K50/115H10K50/15H10K71/00
Inventor 吴劲衡吴龙佳何斯纳
Owner TCL CORPORATION
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