Nanometer material and preparation method thereof, and quantum dot light emitting diode

A technology of quantum dot light-emitting and nanomaterials, which is applied in the field of flat panel display to achieve the effects of simple method, high stability and improved electron transmission efficiency

Active Publication Date: 2021-02-26
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The main purpose of the present invention is to provide a preparation method of nanomaterials and the nanomaterials obtained therefrom, aiming at improving the hole capacity of existing metal oxide nanomaterials transmission efficiency

Method used

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  • Nanometer material and preparation method thereof, and quantum dot light emitting diode
  • Nanometer material and preparation method thereof, and quantum dot light emitting diode
  • Nanometer material and preparation method thereof, and quantum dot light emitting diode

Examples

Experimental program
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preparation example Construction

[0022] A kind of preparation method of above-mentioned nano material, please refer to figure 1 , including the following steps:

[0023] S01, providing a nickel precursor, a phosphorus precursor, a polymer and a solvent, dissolving the nickel precursor, the phosphorus precursor and the polymer in the solvent to prepare a spinning solution;

[0024] S02. Spinning the spinning solution to prepare precursor fibers;

[0025] S03. Sintering the precursor fiber at a high temperature in an oxygen-containing atmosphere to obtain phosphorus-doped nickel oxide nanofibers.

[0026] The preparation method of the above-mentioned nanomaterials provided in the embodiments of the present invention combines spinning processing and high-temperature sintering techniques to synthesize a nickel oxide nanofiber, which has the characteristics of elongated fibers and a staggered morphology, and during the synthesis process Phosphorus atoms replace part of the oxygen sites of nickel oxide, and simul...

Embodiment 1

[0056] A kind of nanometer material is prepared in this embodiment, and the specific technological process is as follows:

[0057] S11. Dissolving nickel nitrate in ethanol to prepare a nickel precursor solution with a concentration of 200mg / mL; then, adding phosphorus powder to the nickel precursor solution so that the molar ratio of nickel to phosphorus is 1:0.005; after that, Add PP accounting for about 20% of the ethanol volume into the mixed solution, and stir until the PP is evenly dispersed in the mixed solution to prepare a spinning solution;

[0058] S12. Spinning the spinning solution by air-spinning method to obtain cotton-like flocs and obtain precursor fibers;

[0059] S13, drying the above-mentioned precursor fiber, and then, under an oxygen atmosphere, sintering the precursor fiber at 400° C. for 2 hours at a high temperature, and then grinding the sintered product until the fiber length is 10-100 μm after cooling down to room temperature, With a diameter of 5-...

Embodiment 2

[0062] A kind of nanometer material is prepared in this embodiment, and the specific technological process is as follows:

[0063] S21. Dissolving nickel sulfate in ethanol to prepare a nickel precursor solution with a concentration of 200mg / mL; then, adding phosphorus powder to the nickel precursor solution so that the molar ratio of nickel to phosphorus is 1:0.005; after that, Add PVC accounting for about 20% of the volume of ethanol to the mixed solution, and stir until the PVC is evenly dispersed in the mixed solution to prepare a spinning solution;

[0064] S22. Spinning the spinning solution by using an air spinning method to obtain cotton-like flocs and obtain precursor fibers;

[0065] S23. Dry the above-mentioned precursor fibers, and then, under an oxygen atmosphere, sinter the precursor fibers at 400° C. for 2 hours at a high temperature, and then grind the sintered products until the fiber length is 10-100 μm after cooling down to room temperature. With a diameter...

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Abstract

The invention belongs to the technical field of panel display, and particularly relates to a nanometer material and a preparation method thereof, and a quantum dot light emitting diode. The preparation method of the nanometer material provided by the invention comprises the following steps: providing a nickel precursor, a phosphorus precursor, a polymer and a solvent, and dissolving the nickel precursor, the phosphorus precursor and the polymer in the solvent to prepare a spinning solution; carrying out spinning treatment on the spinning solution to prepare precursor fibers; and in an oxygen-containing atmosphere, carrying out high-temperature sintering treatment on the precursor fibers to obtain phosphorus-doped nickel oxide nanofibers. The nickel oxide nanofiber is synthesized by combining spinning treatment and high-temperature sintering technologies, the nickel oxide nanofiber has the characteristics of slender shape and staggered morphology, phosphorus doping modification is synchronously conducted on nickel oxide in a synthesis process, and the electron transmission efficiency of the nickel oxide nanometer material is greatly improved.

Description

technical field [0001] The invention belongs to the technical field of flat panel display, and in particular relates to a nanometer material, a preparation method thereof and a quantum dot light-emitting diode. Background technique [0002] Quantum Dot Light Emitting Diodes (QLED) is an electroluminescent device, which has become a new generation of excellent display technology due to its advantages such as high luminous efficiency, high color purity, narrow luminous spectrum, and adjustable emission wavelength. At present, the main problem limiting the large-scale commercial application of QLED is its low device life and poor stability. The main problem is that the hole transport efficiency in the device structure is too low to balance with the electron transport efficiency, which affects the hole in the The quantum dot light-emitting layer is effectively recombined with electrons. [0003] QLED nanomaterials include organic polymers and metal oxides. Compared with organic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): D01F9/08H01L51/50H01L51/54H01L51/56B82Y30/00
CPCD01F9/08B82Y30/00H10K50/115H10K50/155H10K71/00
Inventor 吴劲衡吴龙佳何斯纳
Owner TCL CORPORATION
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