Composite material and its preparation method and quantum dot light-emitting diode

A composite material, nitrogen atom technology, applied in the field of materials, can solve problems such as unsatisfactory hole transport effect

Active Publication Date: 2021-06-11
TCL CORPORATION
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to overcome the above-mentioned shortcomings of the prior art, provide a composite material and its preparation method and quantum dot light-emitting diodes, aiming at solving the technical problem that the hole transport effect of the existing hole transport materials is not ideal

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Composite material and its preparation method and quantum dot light-emitting diode
  • Composite material and its preparation method and quantum dot light-emitting diode

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0026] On the other hand, the embodiment of the present invention also provides a method for preparing a composite material, such as figure 1 shown, including the following steps:

[0027] S01: Provide nitrogen-doped graphyne and p-type metal oxides;

[0028] S02: dissolving the nitrogen-doped graphyne and p-type metal oxide in a solvent to obtain a precursor solution;

[0029] S03: Depositing the precursor solution on a substrate to obtain the composite material.

[0030] The preparation method of the composite material provided by the embodiment of the present invention is obtained by directly dissolving nitrogen-doped graphyne and p-type metal oxide in a solvent, and then depositing it on a substrate and annealing it. The preparation method has simple process and low cost, and the finally obtained composite material can significantly improve the charge transport performance, and the use of the compound material in the hole transport material can improve the hole transport...

Embodiment 1

[0046] The following uses α-graphyne (α-GY) nano-microsphere powder, n-butanol solvent, and nickel oxide nanoparticles as examples for a detailed introduction:

[0047] 1) Evenly spread the α-graphyne powder on a watch glass, place it in an argon atmosphere and heat it to a certain temperature of 250 degrees Celsius;

[0048] 2) 5% ammonia gas (95% argon balance) is slowly passed into the graphyne powder, and the heating and ventilation are continued for 30 minutes to obtain a nitrogen-doped graphyne material;

[0049] 3) Disperse nitrogen-doped graphyne and nickel oxide particles in n-butanol solvent and stir for a certain period of time to obtain a mixed colloidal solution of hole transport materials;

[0050] 4) Depositing the mixed solution of the nitrogen-doped graphyne hybridized nickel oxide hole transport material on the anode substrate to prepare a hole transport material layer.

[0051] 5) sequentially depositing a quantum dot light-emitting layer, an electron trans...

Embodiment 2

[0053] The following uses δ-graphyne (δ-GY) nano-microsphere powder, ethanol solvent, and molybdenum oxide nanoparticles as examples for a detailed introduction:

[0054] 1) Evenly spread the δ-graphyne powder on a watch glass, place it in an argon atmosphere and heat it to a certain temperature of 250 degrees Celsius;

[0055] 2) 5% ammonia gas (95% argon balance) is slowly passed into the graphyne powder, and the heating and ventilation are continued for 30 minutes to obtain a nitrogen-doped graphyne material;

[0056] 3) Disperse nitrogen-doped graphyne and molybdenum oxide particles in an ethanol solvent and stir for a certain period of time to obtain a mixed colloidal solution of hole transport materials;

[0057] 4) Depositing the mixed solution of the nitrogen-doped graphyne hybridized molybdenum oxide hole transport material on the anode substrate to prepare a hole transport material layer.

[0058] 5) sequentially depositing a quantum dot light-emitting layer, an ele...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
hole mobilityaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention belongs to the technical field of materials, and in particular relates to a composite material, a preparation method thereof, and a quantum dot light-emitting diode. The composite material includes p-type metal oxide nanoparticles and nitrogen-doped graphyne dispersed in the p-type metal oxide nanoparticles. The nitrogen-doped graphyne is dispersed in p-type metal oxide nanoparticles, and the composite material formed is used as a hole transport material, which can improve the hole transport efficiency, thereby improving the luminous efficiency of the device.

Description

technical field [0001] The invention belongs to the technical field of materials, and in particular relates to a composite material, a preparation method thereof, and a quantum dot light-emitting diode. Background technique [0002] Quantum dot light-emitting diode (QLED) has become a new generation of excellent display technology due to its advantages of high luminous efficiency, high color purity, narrow luminous spectrum, and adjustable emission wavelength. However, the main problem that currently limits the large-scale commercial application of QLED is its device. The lifespan is low and the stability is poor. The main problem is that the efficiency of the hole injection layer and the hole transport layer in the device structure is too low to balance with the electron transport efficiency. [0003] At present, the transport performance of the hole transport layer material is generally much lower than that of the electron transport layer. The charge transport of the devic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K50/115H10K50/155H10K71/00
Inventor 吴劲衡吴龙佳何斯纳
Owner TCL CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap