Quantum dot light-emitting diode, preparation method of quantum dot light-emitting diode

A quantum dot light-emitting and diode technology, applied in semiconductor/solid-state device manufacturing, nanotechnology for materials and surface science, organic semiconductor devices, etc., can solve problems such as poor conductivity, reduce the impact of device performance, and improve performance. , the effect of improving electrical conductivity

Active Publication Date: 2021-06-11
TCL CORPORATION
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a quantum dot light-emitting diode and its preparation method, aiming to solve the problem of poor electrical conductivity when NiO is used as a hole transport material in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quantum dot light-emitting diode, preparation method of quantum dot light-emitting diode
  • Quantum dot light-emitting diode, preparation method of quantum dot light-emitting diode
  • Quantum dot light-emitting diode, preparation method of quantum dot light-emitting diode

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0031] Correspondingly, such as image 3 As shown, the second aspect of the present invention provides a method for preparing a quantum dot light-emitting diode, comprising the following steps:

[0032] S01. Provide the substrate;

[0033]S02. A mixed solution is provided, the mixed solution includes nickel oxide nanoparticles and carbon quantum dots, wherein the surface of the nickel oxide nanoparticles is connected to a hydroxyl group, and the surface of the carbon quantum dots is connected to a carboxyl group;

[0034] S03. After depositing the mixed solution on the surface of the substrate, perform annealing treatment to obtain a hole transport layer.

[0035] In the method for preparing a quantum dot light-emitting diode provided in the embodiment of the present invention, a mixed solution of nickel oxide nanoparticles and carbon quantum dots is deposited on the surface of a substrate and then annealed to prepare a hole transport layer. The material of the obtained hole...

Embodiment 1

[0067] A preparation method of nickel oxide nanomaterials, comprising the following steps:

[0068] Add an appropriate amount of nickel chloride to 50ml of methanol to form a nickel chloride solution with a total concentration of 1mol / L, stir and dissolve at 60°C, add sodium hydroxide dropwise to dissolve in lye of 10ml of methanol (OH - : Ni 2+ The molar ratio is 2:1 ratio), continue stirring at 60°C for 3h to obtain a homogeneous transparent solution.

[0069] Dissolve an appropriate amount of benzoic acid in 50ml ODE to form a benzoic acid solution with a concentration of 1mol / L; transfer the benzoic acid solution to a polytetrafluoroethylene liner, and place it in a reactor. In a preheated oven, react at a reaction temperature of 250° C. for 3 hours. After the reaction, precipitate and wash with acetone, and centrifuge to prepare carbon quantum dots.

[0070] Disperse an appropriate amount of carbon quantum dots in 50ml of mixed acid (volume ratio of concentrated sulfur...

Embodiment 2

[0074] A preparation method of nickel oxide nanomaterials, comprising the following steps:

[0075] Add an appropriate amount of nickel nitrate to 50ml propanol to form a nickel nitrate solution with a total concentration of 1mol / L, stir and dissolve at 80°C, add ethanolamine dropwise to dissolve in 10ml propanol lye (OH - : Ni 2+ The molar ratio is 2:1); continue to stir at 80° C. for 3 h to obtain a homogeneous transparent solution.

[0076] Dissolve an appropriate amount of phthalic acid in 50ml 1-hexadecene to form a phthalic acid solution with a concentration of 1mol / L; transfer the phthalic acid solution to a polytetrafluoroethylene liner and place it in a reaction kettle , after tightening and sealing the reactor, put it into a preheated oven, and react for 3 hours at a reaction temperature of 250°C. After the reaction, precipitate and wash with acetone, and centrifuge to prepare carbon quantum dots.

[0077] Disperse an appropriate amount of carbon quantum dots in 5...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a quantum dot light-emitting diode, comprising an anode and a cathode arranged oppositely, a quantum dot light-emitting layer arranged between the anode and the cathode, and a quantum dot light-emitting layer arranged between the anode and the quantum dot light-emitting layer The material of the hole transport layer is nickel oxide nanoparticles and carbon quantum dots, and the nickel oxide nanoparticles and carbon quantum dots are connected through ester groups.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a quantum dot light emitting diode and a preparation method of the quantum dot light emitting diode. Background technique [0002] As a p-type semiconductor material, NiO has an adjustable band gap (band gap is 3.6eV ~ 4.0eV, HOMO energy level is -5.4eV ~ -5.0eV, LUMO energy level is -1.6eV), in the ultraviolet Light region, visible light region and near-infrared light region have high light transmission performance, excellent chemical stability and unique optical, electrical, magnetic properties and other advantages, widely used in electrochromic devices, organic light-emitting diodes, gas sensors , Dye-sensitized solar cells and p-n heterojunctions. [0003] Compared with organic hole transport materials, inorganic hole transport materials have more advantages. The use of inorganic materials effectively solves the problem of degradation of device performance cause...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/54H01L51/50H01L51/56B82Y30/00
CPCB82Y30/00H10K50/155H10K2102/00H10K71/00
Inventor 何斯纳吴龙佳吴劲衡
Owner TCL CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap