Super-junction trapezoidal groove silicon carbide MOSFET device and manufacturing method thereof

Abstract

The invention relates to a super-junction trapezoidal groove silicon carbide MOSFET device and a manufacturing method thereof. The manufacturing method comprises the following steps: providing a silicon carbide substrate; a silicon carbide epitaxial layer is formed on the silicon carbide substrate, the silicon carbide epitaxial layer comprises an epitaxial main body layer, a channel body layer and a source electrode conduction connection layer from bottom to top, and a plurality of body layer extension columns are formed in the epitaxial main body layer; forming a plurality of gate trenches in the upper surface of the silicon carbide epitaxial layer; forming a redefined channel layer on the contour surface of the gate trench and the upper surface of the silicon carbide epitaxial layer; injecting ions into the same side wall of the gate trench in an oblique angle injection mode with a fixed inclination angle to form a reversed polarity conducting section, wherein the upper surface of the reversed polarity conducting section is higher than the upper surface of the channel body layer; arranging a gate structure in the gate trench; and ions are injected into the upper surface of the silicon carbide epitaxial layer to form a shunt junction. According to the invention, the length of the conductive channel formed under the action of the electric field of the gate structure can be adjusted, so that the on-resistance between the source electrode and the drain electrode is lower.

Description

technical field [0001] The present application relates to the field of silicon carbide MOSFET devices, in particular to a super junction trapezoidal groove silicon carbide MOSFET device and a manufacturing method. Background technique [0002] Silicon carbide MOSFET (Metal Oxide Semiconductor Field Effect Transistor, Metal Oxide Semiconductor Field Effect Transistor) is the most concerned device in the research of silicon carbide power electronic devices. Today, when Si (silicon) materials are close to the theoretical performance limit, silicon carbide power devices have always been regarded as "ideal devices" because of their high withstand voltage, low loss, and high efficiency. Silicon carbide MOSFET has great advantages in the application of medium and high power power systems such as photovoltaics, wind power, electric vehicles and rail transit. [0003] The development of silicon carbide power MOSFET device structure is from LDMOS (lateral planar double-diffused MOSFE...

AI Technical Summary

Problems solved by technology

The length of the conductive channel affects the on-resistance of SiC MOSFET devices, and the conductive channel is also limited by the base region

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