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Chemical machine polishing method combined with rotary coating

A chemical-mechanical and spin-coating technology, applied in the direction of grinding devices, grinding machine tools, machine tools suitable for grinding workpiece planes, etc., can solve the silicon dioxide layer pollution of the wafer, the relative effect is not as expected, and it does not have self-flatness Problems such as chemical function, to achieve the effect of thin grinding sacrificial layer thickness

Inactive Publication Date: 2004-03-17
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Moreover, both the recessed area and the component area are covered, so the relative effect is not as expected
Also, in some cases, unnecessary contamination of the silicon dioxide layer of the wafer
And usually, the slow removal rate material layer deposited by deposition method has poorer fluidity than the slow removal rate material layer formed by spin coating (Spin Coating), and does not have self-planarization function

Method used

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  • Chemical machine polishing method combined with rotary coating
  • Chemical machine polishing method combined with rotary coating
  • Chemical machine polishing method combined with rotary coating

Examples

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Effect test

Embodiment 1

[0030] Figure 2A to Figure 2C It is a schematic cross-sectional view of a chemical mechanical polishing method combined with spin coating according to the first preferred embodiment of the present invention.

[0031] Taking the formation of shallow trench isolation regions as an example, please refer to Figure 2A, forming an insulating layer on the semiconductor substrate 100, this step is, for example, depositing a silicon nitride layer by chemical vapor deposition. Secondly, the shallow trench isolation method is carried out, that is, the component area and the isolation area are defined through lithography and etching steps, and one or two layers are deposited by chemical vapor deposition on the recessed isolation area and the stop layer 112 on the component area. Silicon oxide layer 114 . Next, on the entire semiconductor substrate 100 , a spin-coating material layer 116 is formed by spin-coating and cured, so that the height difference between the device area and the ...

Embodiment 2

[0035] Figure 3A to Figure 3C It is a schematic cross-sectional view of a chemical mechanical polishing method combined with spin coating according to the second preferred embodiment of the present invention.

[0036] To form a dielectric layer between conductive layers as an example, please refer to Figure 3A , on the semiconductor substrate 200 to be planarized and on the conductive layer 213, a silicon dioxide layer 214 is deposited by chemical vapor deposition. Then, on the entire semiconductor substrate 200 , a spin coating material layer 216 is formed by spin coating and cured, so that the height difference between the conductive layers 213 and the conductive layers 213 will not be too large. The spin coating is preferably made of silica glass or silica glass or polymer doped with a polymer, and the thickness of the formed spin coating material layer is about 2000 angstroms to 7000 angstroms.

[0037] Please refer to Figure 3B , transfer the wafer to a polishing pa...

Embodiment 3

[0040] Figure 4A to Figure 4C It is a schematic cross-sectional view of a chemical mechanical polishing method combined with spin coating according to the third preferred embodiment of the present invention.

[0041] To form a dielectric layer between conductive layers as an example, please refer to Figure 4A , on the semiconductor substrate 300 to be planarized and on the conductive layer 313, a silicon dioxide layer 314 is deposited by chemical vapor deposition. Then on the whole semiconductor substrate 300, after forming a first spin coating material layer 316 by spin coating and curing, and then forming a second spin coating material layer 318 by spin coating and curing, the conductive layer The height difference between 313 and the conductive layer 313 will not be too large. The spin coating is preferably made of silica glass or silica glass or polymer doped with a polymer, and the thickness of the formed spin coating material layer is about 2000 angstroms to 7000 ang...

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Abstract

A chemicomechanical grinding method combining rotary coating includes such steps as generating a dielectric layer on a semiconductor substrate with a rough surface, coating a layer composed of silicon glass layer and polymer layer by the rotary coating method, and finally, chemicomechanical grinding for flatness treatment.

Description

technical field [0001] The present invention relates to a chemical mechanical polishing method (Chemical Mechanical Polishing; CMP), in particular to a chemical mechanical polishing method combined with spin coating. Background technique [0002] Chemical mechanical polishing is one of the most commonly used processes in the manufacture of Ultra Large Scale Integration (ULSI) components. During one or more stages of the process of fabricating an integrated circuit component, it is often necessary to remove some material from the surface of the component and planarize the various material layers before performing subsequent steps. Chemical mechanical polishing has become more and more frequent as a method of removing and planarizing material. This method is to contact the surface of the wafer to be polished with the polishing pad (the wafer is not necessarily fixed, it may be "limited suspension"), and the slurry (Slurry) is added to the grinding surface along the rotating p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B7/22B24B37/00H01L21/302
Inventor 林启发
Owner WINBOND ELECTRONICS CORP
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