Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Defect-rich metal bismuth and preparation method and application thereof

A defect-rich, metal-rich technology, applied in the field of defect-rich metals and their preparation, can solve problems such as low current density, danger, and selectivity decline, and achieve excellent stability, large electrochemically active surface area, and low cost.

Active Publication Date: 2022-04-01
CENT SOUTH UNIV
View PDF14 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Similarly, the preparation of this material requires oil bath heating and inert atmosphere protection, and the device is complicated and dangerous; and although the obtained catalyst achieves a formic acid selectivity greater than 90% at a low potential, the current density is very low, and the potential After the selectivity decreased significantly (Angew. Chem.Int. Ed. et al. Phase-dependent electrocatalytic CO 2 reduction on Pd 3 Binanocrystals. Angew. Chem. Int. Ed. 2021, 60, 21741)

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Defect-rich metal bismuth and preparation method and application thereof
  • Defect-rich metal bismuth and preparation method and application thereof
  • Defect-rich metal bismuth and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0063] Example 1 of a preparation method of defect-rich metal bismuth (Bi-D)

[0064] (1) Add 1 mmol of bismuth neododecanoate and 300 mg of polyvinylpyrrolidone into 35 mL of ethylene glycol, and stir for 1 h at room temperature at a speed of 500 r / min until uniform to obtain solution A;

[0065] (2) Add 2 mmol of ascorbic acid to the solution A obtained in step (1), and stir for 1 h at room temperature at a rotation speed of 500 r / min until uniform to obtain solution B;

[0066] (3) Place the solution B obtained in step (2) in a 50 mL polytetrafluoroethylene-lined airtight reaction kettle, and in a constant temperature drying oven, heat up to 150°C at a heating rate of 6°C / min for solvothermal After reacting for 4 hours and cooling to room temperature naturally, the black precipitate was centrifuged and washed at a speed of 10,000 r / min (alternatively washed with deionized water and ethanol three times each), and dried in vacuum at 60°C and a vacuum of -0.04 MPa. After 12 h...

Embodiment 2

[0079]The defect-rich metal bismuth is flaky nano-particles with defect-containing amorphous phase distributed on the metal bismuth crystal phase; the crystal plane index of the main exposed crystal plane of the metal bismuth crystal phase is (012); the defects include vacancies, Dislocations and grain boundaries; the average thickness of the defect-rich metal bismuth is 130 nm; the defect-containing amorphous phase in the defect-rich metal bismuth accounts for 18% of the total area.

[0080] Example 3 of a defect-rich metal bismuth (Bi-D3)

[0081] The defect-rich metal bismuth is flaky nano-particles with defect-containing amorphous phase distributed on the metal bismuth crystal phase; the crystal plane index of the main exposed crystal plane of the metal bismuth crystal phase is (012); the defects include vacancies, Dislocations and defects; the average thickness of the defect-rich metal bismuth is 150 nm; the defect-containing amorphous phase in the defect-rich metal bismu...

Embodiment 3

[0091] (1) Add 2 mmol of bismuth neododecanoate and 300 mg of polyvinylpyrrolidone into 30 mL of ethylene glycol, and stir for 1 hour at room temperature at a speed of 600 r / min until uniform, to obtain solution A;

[0092] (2) Add 3 mmol of ascorbic acid to solution A obtained in step (1), and stir for 1 hour at room temperature with a rotation speed of 600 r / min until uniform to obtain solution B;

[0093] (3) Place the solution B obtained in step (2) in a 50 mL polytetrafluoroethylene-lined airtight reaction kettle, and in a constant temperature drying oven, heat up to 140°C at a heating rate of 4°C / min for solvothermal After reacting for 5 hours and cooling to room temperature naturally, the black precipitate was centrifuged and washed at a speed of 8000 r / min (alternatively washed with deionized water and ethanol 4 times each), and vacuum-dried at 50°C and vacuum degree of -0.03MPa for 14 hours , to get rich defect metal bismuth Bi-D3.

[0094] Application examples 2 and...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses defect-rich metal bismuth as well as a preparation method and application thereof. The defect-rich metal bismuth is flaky nanoparticles containing defect amorphous phases, wherein the flaky nanoparticles are distributed in a region on a metal bismuth crystal phase; the crystal face index of the main exposed crystal face of the metal bismuth crystal phase is (012); the defects include one or more of vacancies, dislocations or grain boundaries. The preparation method comprises the following steps: (1) adding bismuth neolaurate and a surfactant into an organic solution, and uniformly stirring to obtain a solution A; (2) adding a reducing agent into the solution A, and uniformly stirring to obtain a solution B; and (3) putting the solution B into a closed reaction kettle, carrying out solvothermal reaction, naturally cooling to room temperature, centrifugally washing, and drying to obtain the defect-rich metal bismuth. The CO2RR formic acid production selectivity of the defect-rich metal bismuth is high, the current density is high, the electrochemical active surface area is large, the charge transfer resistance is low, and the stability is good. The method is simple in process, safe, low in cost and suitable for industrial production.

Description

technical field [0001] The invention relates to a defect-rich metal and its preparation method and application, in particular to a defect-rich metal bismuth and its preparation method and application. Background technique [0002] CO powered by renewable electricity 2 Reduction reaction (CO 2 RR) can not only reduce atmospheric CO 2 content, and carbon-containing fuels can be produced to deal with energy shortages. However, the current electrocatalytic CO 2 RR is facing challenges such as high overpotential, poor selectivity, low current density, and competitive hydrogen evolution reaction (HER), and it is necessary to develop low-cost, high-activity, high-selectivity, and stable non-precious metal catalysts to promote their industrial applications. . [0003] Metal bismuth and its compounds have the advantages of low toxicity, low cost, stable chemical properties at room temperature, etc., and they have an inhibitory effect on the adsorption of H*, which is not conduci...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B22F1/054B22F1/08B22F9/24C25B3/07C25B3/26C25B11/075B82Y30/00B33Y40/00
Inventor 雷永鹏王裕超吴姣黄子晟
Owner CENT SOUTH UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com