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Shield gate groove type field effect transistor based on charge compensation and preparation method thereof

A technology of field effect transistor and charge compensation, which is applied in the field of shielded gate trench type field effect transistor and its preparation, can solve the problems of reducing transmission capacitance, achieve low on-resistance, prevent breakdown, and reduce on-resistance Effect

Pending Publication Date: 2022-04-12
无锡先瞳半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, its shielded gate structure significantly reduces the transfer capacitance by effectively isolating the coupling from the control gate to the drain

Method used

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  • Shield gate groove type field effect transistor based on charge compensation and preparation method thereof
  • Shield gate groove type field effect transistor based on charge compensation and preparation method thereof
  • Shield gate groove type field effect transistor based on charge compensation and preparation method thereof

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Effect test

Embodiment 1

[0051]In a traditional SGT device, when the SGT device is off, the drift region is a withstand voltage region. When the device is at withstand voltage, the electric force lines generated by the ionized donor positive charges in the drift region are terminated to the trench shielded gate. At this time, due to the electric field concentration effect, the electric field lines in the drift region are concentrated near the shield gate, and the corners of the trench region bear a strong electric field, which often causes the transistor to be broken down between the drift region and the trench region. Therefore, in order to avoid the generation of a strong electric field at the corner of the trench region due to the electric field concentration effect and improve the breakdown voltage of the transistor, it is urgent to design a new shielded gate trench field effect transistor. An embodiment of the present application provides a shielded gate trench field effect transistor based on ch...

Embodiment 2

[0067] Based on the shielded gate trench field effect transistor based on charge compensation described in Embodiment 1, since the base region is short-circuited with the N-type source region connected to the channel through the heavily doped P-type source region, when the SGT is in the forward direction When blocking or when the voltage between the drain and the source is high, the transistor generates holes due to the avalanche effect, and flows through the channel in the base region to form a hole current that prompts the parasitic triode to turn on. The hole current flows through the channel of the body region, causing the parasitic triode to be turned on, and the turning on of the parasitic triode will lead to avalanche failure of the transistor.

[0068] In order to delay the turn-on of the parasitic transistor, the embodiment of the present application also provides another shielded gate trench field effect transistor based on charge compensation.

[0069] figure 1 It ...

Embodiment 3

[0086] Corresponding to the shielded gate trench field effect transistor based on charge compensation shown in Embodiment 1, the present application also provides a preparation method of a shielded gate trench field effect transistor based on charge compensation and the corresponding embodiment .

[0087] figure 2 It is a schematic flowchart of a method for manufacturing a shielded gate trench field effect transistor based on charge compensation shown in an embodiment of the present application.

[0088] see figure 2 , the preparation method of the shielded gate trench type field effect transistor, comprising:

[0089] 201. Prepare a substrate region with a semiconductor material;

[0090] In the embodiment of the present application, the substrate region is prepared with an N-type heavily doped semiconductor material, that is, the doping type of the substrate region is N-type doping, and the doping concentration of the substrate region is a heavily doped concentration. ...

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Abstract

The invention relates to a shield gate groove type field effect transistor based on charge compensation. The shield gate groove type field effect transistor comprises a substrate region, a drift region, a base body region, a source region, a groove region, a drain electrode and a source electrode, the drift region is connected with the substrate region, and the base region and the source region are sequentially arranged above the drift region by taking the direction of the substrate region pointing to the drift region as the upper part; a charge compensation region is also arranged between the shield grid and the drift region, and the shield grid is connected with the drift region through the insulating layer and the charge compensation region in sequence; and the charge compensation region surrounds the shielding grid through the insulating layer below and on the side of the shielding grid. According to the shield gate groove type field effect transistor based on charge compensation provided by the embodiment of the invention, the breakdown voltage of a device is improved through the charge compensation region, and the transistor obtains lower on-resistance under the same breakdown voltage.

Description

technical field [0001] The present application relates to the field of semiconductor technology, in particular to a shielded gate trench type field effect transistor based on charge compensation and a preparation method thereof. Background technique [0002] Shielded gate trench field effect transistors (Split Gate Trench, SGT) have been widely used in important low-voltage fields such as power management. SGT has high channel density and good charge compensation effect. In addition, its shielded gate structure significantly reduces transfer capacitance by effectively isolating the coupling from the control gate to the drain. [0003] Therefore, SGT has lower specific on-resistance, smaller conduction loss and switching loss, and higher operating frequency. [0004] However, in the traditional SGT device, when the SGT device is turned off, the drift region is a withstand voltage region, and the electric force line generated by the ionized donor positive charge in the withs...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/423H01L29/78H01L21/336
Inventor 张子敏王宇澄虞国新吴飞钟军满
Owner 无锡先瞳半导体科技有限公司
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