Preparation method of diamond-loaded graphene thermal interface material for heat dissipation of electronic device

A technology of thermal interface materials and electronic devices, applied in the field of heat conduction materials, can solve problems such as reducing the service life of equipment, affecting the efficiency and reliability of electronic equipment, and increasing the operating temperature of electronic devices, so as to meet the needs of use and achieve high isotropic heat conduction Features, low cost effect

Active Publication Date: 2022-04-15
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

If there is no effective means to dissipate the waste heat, the operating temperature of the electronic device will increase, which will affect the efficiency and reliability of the electronic device, and even reduce the service life of the device

Method used

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  • Preparation method of diamond-loaded graphene thermal interface material for heat dissipation of electronic device
  • Preparation method of diamond-loaded graphene thermal interface material for heat dissipation of electronic device

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Effect test

Embodiment 1

[0024] In this embodiment, the graphene-diamond mixed solution is suction-filtered to prepare the graphene thermally conductive framework precursor, and the graphene thermally conductive framework is obtained by high-temperature annealing, and the thermally conductive framework is compounded with epoxy resin to obtain the final thermal interface material. The specific preparation method is as follows:

[0025] 1) Take 100 mg of graphene sheets with an average sheet diameter of 18 μm, and perform ultrasonic treatment in absolute ethanol for 2 hours, so that the graphene is fully dispersed in ethanol, so that the average sheet diameter is reduced to 7 μm.

[0026] 2) Take 300 mg of diamond powder with a particle size of 2 μm and mix it with the ultrasonicated graphene solution for 1 hour.

[0027] 3) Suction-filter the sonicated solution in step 2) to remove the suction-filtered product, air-dry it naturally at room temperature, and perform high-temperature annealing treatment at...

Embodiment 2

[0033] In this embodiment, the graphene-diamond mixed solution is suction-filtered to prepare the graphene thermally conductive framework precursor, and the graphene thermally conductive framework is obtained by high-temperature annealing. After the thermally conductive framework is compounded with epoxy resin, the final thermal interface material is obtained. The specific preparation method is as follows:

[0034] 1) Take 550 mg of graphene sheets with an average sheet diameter of 18 μm, and perform ultrasonic treatment in absolute ethanol for 6 hours, so that the graphene is fully dispersed in ethanol, so that the average sheet diameter is reduced to 7 μm.

[0035] 2) Take 1650 mg of diamond powder with a particle size of 2 μm and mix it with the ultrasonicated graphene solution for 5 hours.

[0036] 3) Suction-filter the sonicated solution in step 2) to remove the suction-filtered product, air-dry it naturally at room temperature, and perform high-temperature annealing treat...

Embodiment 3

[0044] In this embodiment, the graphene-diamond mixed solution is suction-filtered to prepare the graphene thermally conductive framework precursor, and the graphene thermally conductive framework is obtained by high-temperature annealing. After the thermally conductive framework is compounded with epoxy resin, the final thermal interface material is obtained. The specific preparation method is as follows:

[0045] 1) Take 1000 mg of graphene sheets with an average sheet diameter of 18 μm, and perform ultrasonic treatment in absolute ethanol for 10 h, so that the graphene is fully dispersed in ethanol, so that the average sheet diameter is reduced to 7 μm.

[0046] 2) Take 3000 mg of diamond powder with a particle size of 2 μm and mix it with the ultrasonicated graphene solution for 3 hours.

[0047] 3) Suction-filter the sonicated solution in step 2) to remove the suction-filtered product, air-dry it naturally at room temperature, and perform high-temperature annealing treatme...

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Abstract

The invention discloses a preparation method of a diamond-loaded graphene thermal interface material for heat dissipation of an electronic device, and relates to a heat conduction material. The graphene sheets are subjected to ultrasonic treatment in absolute ethyl alcohol, and diamond powder and the graphene solution subjected to ultrasonic treatment are mixed and subjected to ultrasonic treatment; performing suction filtration to obtain a suction filtration product, taking down, performing natural air drying at room temperature, and performing high-temperature annealing treatment; soaking the product in absolute ethyl alcohol containing a coupling agent, taking out, and air-drying at room temperature to obtain a heat-conducting framework; the preparation method comprises the following steps: mixing epoxy resin with a catalyst neodymium acetylacetonate (III) hydrate, mixing with a curing agent methylhexahydrophthalic anhydride, and stirring and mixing at room temperature to obtain a mixed solution; soaking the heat-conducting framework into the mixed solution, and removing bubbles in a vacuum oven; and performing two-step treatment in a common drying oven to obtain the graphene thermal interface material. The method is low in cost, simple in process, capable of meeting different use requirements, capable of being produced on a large scale and good in repeatability. The high longitudinal thermal conductivity, the high isotropic thermal conductivity, the shape and the size can be dynamically adjusted according to the device structure.

Description

technical field [0001] The invention relates to a heat conduction material for heat dissipation of electronic devices, in particular to a method for preparing a diamond-supported graphene thermal interface material for heat dissipation of electronic devices. Background technique [0002] With the advent of the 5G era and the rise of third-generation semiconductors, various electronic devices are developing towards multi-functional integration, high packaging density, miniaturization, high computing rate, and high transmission rate, which inevitably leads to increased power density and buildup of waste heat. If there is no effective way to dissipate the waste heat, the operating temperature of electronic devices will increase, thereby affecting the efficiency and reliability of electronic equipment, and even reducing the service life of the equipment. Therefore, it is necessary to introduce materials with high thermal conductivity as a medium to transfer waste heat from loca...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08L63/00C08K7/00C08K3/04C08K9/06C08K9/12
Inventor 张学骜李轶乐林明源
Owner XIAMEN UNIV
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