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Photoelectric device and preparation method thereof

A technology of optoelectronic devices and optical circuits, which is applied in the direction of electrical components, semiconductor devices, circuits, etc., can solve the problems of high processing cost and complicated processing technology, and achieve the effects of low processing difficulty, improved coupling efficiency, and reduced processing cost

Pending Publication Date: 2022-04-19
HUAWEI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The processing technology of this structure is complex and the processing cost is high

Method used

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  • Photoelectric device and preparation method thereof
  • Photoelectric device and preparation method thereof
  • Photoelectric device and preparation method thereof

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preparation example Construction

[0058] Based on the same inventive concept, the application provides a method for preparing an embodiment optoelectronic device, such as Figure 8 shown, including the following steps:

[0059] Step S11 ), forming inclined grooves 13 in the waveguide layer 11 .

[0060] Wherein, the structure diagram of the waveguide layer 11 of an embodiment of the present application is as follows Figure 9 As shown, the waveguide layer 11 includes a first cladding layer 111 , a waveguide core layer 112 and a second cladding layer 113 , and the waveguide core layer 112 is located between the first cladding layer 111 and the second cladding layer 113 . The waveguide core layer 112 may be, for example, a silicon nitride core layer or a silicon oxide core layer, and the first cladding layer 111 and the second cladding layer 113 may be, for example, a silicon oxide cladding layer. together with reference figure 2 and Figure 9 , the first cladding layer 111 and the second cladding layer 113...

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Abstract

The invention provides a photoelectric device and a preparation method thereof, and relates to the field of photoelectricity. The photoelectric device comprises a waveguide layer and an optical transceiver chip. The waveguide layer comprises a first wrapping layer, a second wrapping layer, a waveguide core layer located between the first wrapping layer and the second wrapping layer, and a chute penetrating through the first wrapping layer and the waveguide core layer. The chute comprises a first side surface and a second side surface, the first side surface is arranged close to the light path side of the waveguide core layer, and the second side surface is arranged far away from the light path side; the optical transceiver chip is arranged on the side, away from the waveguide core layer, of the first wrapping layer and covers an opening of the chute, and transmission light on the optical path side is transmitted between the waveguide layer and the optical transceiver chip after being reflected by the first side face. The photoelectric device has the advantages of simple processing technology and low production cost.

Description

technical field [0001] The present application relates to the field of optoelectronics, in particular to an optoelectronic device and a preparation method thereof. Background technique [0002] With the rapid development of optical communication technology, the application of optoelectronic devices is becoming more and more extensive. Taking the optical transceiver module used in the field of optical communication as an example, the receiving side is equipped with a photodetector chip, and the collected optical signal is converted into an electrical signal by the photodetector chip for information processing. [0003] In order to ensure that the bit error rate of the processed signal is lower than a certain standard value, the photodetector chip is usually designed to receive the incident light to collect the optical signal to the greatest extent and improve the accuracy of signal processing. At the same time, when the photodetector chip is mounted on the waveguide layer us...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/02H01L31/0216H01L31/0232H01L31/18
CPCH01L31/02H01L31/02327H01L31/02168H01L31/18
Inventor 廖永平李志伟曾金林王谦冀瑞强
Owner HUAWEI TECH CO LTD