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Organic g-CNQDs modified CVD single-layer TMDs photoelectric detector and preparation method thereof

A photodetector and single-layer technology, which is applied in photovoltaic power generation, electric solid-state devices, semiconductor/solid-state device manufacturing, etc., can solve problems such as complex integration processes, improve photoresponsivity, broaden spectral response range, and photoresponsivity Improved effect

Pending Publication Date: 2022-04-22
XIAN TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current integration process of quantum dot-enhanced photodetectors is complicated, and the quantum dots mostly contain heavy metals Cd and Pb. Therefore, it is urgent to develop quantum dot materials with simple integration process, environmental friendliness and excellent performance.

Method used

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  • Organic g-CNQDs modified CVD single-layer TMDs photoelectric detector and preparation method thereof
  • Organic g-CNQDs modified CVD single-layer TMDs photoelectric detector and preparation method thereof
  • Organic g-CNQDs modified CVD single-layer TMDs photoelectric detector and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] Example 1 A kind of organic g-CNQDs modified CVD monolayer MoS 2 Fabrication method of photodetector

[0046] The detector prepared in this example includes a CVD single-layer TMDs film and g-CNQDs covering the surface of the TMDs film, and the single-layer TMDs film is MoS 2 Two-dimensional materials, g-CNQDs are zero-dimensional materials, and the two form a heterojunction to construct a photodetector with a TMDs / g-CNQDs heterostructure. Its preparation method is carried out successively according to the following steps:

[0047] (1) CVD monolayer MoS 2 Photodetector Fabrication

[0048] Ⅰ. Use an analytical balance to weigh 0.8g S powder and 0.002g MoO respectively 3 The powder is placed in two ceramic boats, and placed in the center of the low-temperature zone and high-temperature zone of the CVD tube furnace respectively, and the temperature zone is separated by a temperature isolation plug; the cleaned sapphire growth substrate is placed on the MoO 3 10cm dow...

Embodiment 2

[0063] Example 2 A kind of organic g-CNQDs modified CVD monolayer WS 2 Fabrication method of photodetector

[0064] (1) CVD monolayer WS 2 Photodetector Fabrication

[0065] Ⅰ. Use an analytical balance to weigh 0.8g S powder and 0.02g WO respectively 3 The powder is placed in two ceramic boats, and placed in the center of the low-temperature zone and high-temperature zone of the CVD tube furnace respectively. The temperature zone is separated by a temperature isolation plug, and the cleaned sapphire growth substrate is placed 3 10cm downstream, and put a thermal insulation plug.

[0066] Ⅱ. Seal both sides of the quartz tube, turn on the vacuum pump to extract the air in the tube until the pressure in the tube drops to 8Pa, open the intake valve, fill the quartz tube with high-purity argon to normal pressure, repeat this process 5 times to discharge the residual air in the tube, After the aeration is completed, the gas flow rate is adjusted to 100 sccm until the reaction ...

Embodiment 3-6

[0080] Example 3-6 Preparation method of organic g-CNQDs modified CVD monolayer TMDs photodetector

[0081] Example 3-6 Preparation of g-CNQDs modified CVD monolayer MoS 2 Photodetector, the preparation method is similar to Example 1, the only difference is: g-CNQDs modified CVD monolayer MoS 2 The corresponding technical parameters in the photodetector preparation process are different, see the table below for details.

[0082] Table 1 Technical parameter list

[0083]

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Abstract

The invention discloses an organic g-CNQDs modified CVD single-layer TMDs photoelectric detector, which comprises a CVD single-layer TMDs thin film and g-CNQDs covering the surface of the TMDs thin film, the single-layer TMDs thin film is a two-dimensional material, the g-CNQDs are a zero-dimensional material, and the single-layer TMDs thin film and the g-CNQDs form a TMDs / g-CNQDs heterostructure photoelectric detector by forming a heterojunction. The invention further provides a preparation method of the g-CNQDs modified CVD single-layer TMDs photoelectric detector, the g-CNQDs modified CVD single-layer TMDs photoelectric detector is prepared through the steps of cleaning, doping and drying in sequence, the preparation method is simple, the process is easy to control, environment-friendly and excellent in performance, and compared with the unmodified g-CNQDs modified CVD single-layer TMDs photoelectric detector, the spectral response range is widened, and the photoelectric detector can be applied to the field of photodetectors. And the light responsivity is also greatly improved.

Description

technical field [0001] The invention belongs to the field of two-dimensional materials and devices, and relates to an organic g-CNQDs modified CVD single-layer TMDs photodetector and a preparation method thereof. Background technique [0002] The strong light absorption of TMDs, combined with their good mobility and the possibility to fabricate ultrathin crystalline films, has aroused great interest in this material for photodetection applications in the past decade. However, limited by the intrinsic bandgap width of TMDs, the photoresponse of single-layer or multi-layer TMDs is limited to the visible and near-infrared regions, and wider-band detection cannot be realized. Therefore, the development of broad-spectrum two-dimensional TMDs photodetectors is a research hotspot in this field. [0003] Quantum dots (Quantum Dots, QDs) have the characteristics of spectral tunability and solution processing. The spectral absorption range of quantum dots can affect the spectral abs...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/42C23C16/30
CPCC23C16/305H10K71/12H10K30/20Y02E10/549
Inventor 坚佳莹南亚新董芃凡龙伟张曦冯浩坚增运
Owner XIAN TECH UNIV