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Preparation method of epitaxial structure, epitaxial structure, device and equipment

A technology of epitaxial structures and power devices, which is applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problem that the resistivity of the gallium nitride buffer layer cannot be further improved, so as to improve the carbon doping ability, The effect of increasing the breakdown voltage and increasing the resistivity

Pending Publication Date: 2022-04-29
TANG OPTOELECTRONICS EQUIPMENT (SHANGHAI) CORPORATION LIMITED
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  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is that the existing method for preparing GaN-on-Si epitaxial structure cannot further improve the resistivity of the GaN buffer layer

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  • Preparation method of epitaxial structure, epitaxial structure, device and equipment
  • Preparation method of epitaxial structure, epitaxial structure, device and equipment

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Embodiment Construction

[0034] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Apparently, the described embodiments are only some of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of this application.

[0035] Reference herein to "one embodiment" or "an embodiment" refers to a specific feature, structure or characteristic that may be included in at least one implementation of the present application. In the description of the present application, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "top", "bottom" etc. is based on the orientation or positional relationship shown in the drawings, and is only for It ...

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Abstract

The invention relates to the technical field of semiconductor device preparation, in particular to a preparation method of an epitaxial structure, the epitaxial structure, a device and equipment. The preparation method comprises the following steps: obtaining a supporting substrate; preparing a base layer on the supporting substrate; preparing a carbon-doped gallium nitride buffer layer on the base layer; wherein when the gallium nitride buffer layer is prepared, a carbon source is introduced to perform carbon doping on the gallium nitride buffer layer; the carbon source comprises a first carbon source, and the first carbon source is trimethylaluminum. According to the preparation method, a process doping scheme is provided, and the resistivity of the gallium nitride buffer layer can be further improved. In the growth process of the gallium nitride buffer layer, trimethylaluminum is introduced as a carbon source, so that the carbon doping capability of the gallium nitride buffer layer can be remarkably improved, the resistivity of the gallium nitride buffer layer is further remarkably improved, and the breakdown voltage of the silicon-based gallium nitride buffer layer is remarkably improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor device preparation, in particular to a method for preparing an epitaxial structure, an epitaxial structure, a device and equipment. Background technique [0002] At present, high-voltage, high-temperature, high-frequency and high-power gallium nitride (GaN) electronic devices are a research hotspot in the international semiconductor field and one of the strategic commanding heights in today's microelectronics field. Compared with the first-generation semiconductor materials represented by silicon and the second-generation semiconductor materials represented by gallium arsenide, the third-generation semiconductor materials represented by gallium nitride have high electron mobility, high voltage resistance, and High temperature and other advantages, especially suitable for the preparation of high-voltage power devices. In high-voltage power devices, the GaN buffer layer is often required to h...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/18C30B25/16C30B29/40H01L21/02
CPCC30B25/18C30B29/406C30B25/183C30B25/16H01L21/02381H01L21/02458H01L21/02505H01L21/0254H01L21/0262
Inventor 吕越陈爱华
Owner TANG OPTOELECTRONICS EQUIPMENT (SHANGHAI) CORPORATION LIMITED