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Boron-doped nano polycrystalline diamond taking nano graphite as carbon source and preparation method of boron-doped nano polycrystalline diamond

A technology of polycrystalline diamond and nano-graphite, which is applied in the field of high-precision machining and cutting, and high-precision cutting abrasives, can solve the problems that the reaction mechanism has not been fully explained, and achieve the goal of changing surface activity, excellent cutting materials, and improving toughness Effect

Pending Publication Date: 2022-05-13
HENAN UNIVERSITY OF TECHNOLOGY
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  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Using nano-graphite as a carbon source to synthesize nano-polycrystalline diamond is a promising approach, but in fact its reaction mechanism has not been fully explained, and whether the raw materials have an impact on the assembly of synthetic blocks remains to be further explored

Method used

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  • Boron-doped nano polycrystalline diamond taking nano graphite as carbon source and preparation method of boron-doped nano polycrystalline diamond
  • Boron-doped nano polycrystalline diamond taking nano graphite as carbon source and preparation method of boron-doped nano polycrystalline diamond

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Embodiment 1

[0026] A kind of preparation method of the boron-doped nano-polycrystalline diamond of carbon source as carbon source comprises the following steps:

[0027] 1) Nano-graphite is subjected to surface purification treatment, followed by high-temperature and high-pressure sintering. The obtained material has high strength and wear resistance; The concentration is 3mol / L dilute sulfuric acid in the solution prepared according to the ratio of 1:3, stir, let stand for a period of time, rinse with deionized water until neutral, dry and put it in a dry container for later use;

[0028] 2) Weigh the mass fraction of 80-90wt% nano-graphite and 15-20wt% nano-boron obtained in step 1), and add polyvinylpyrrolidone dispersant to nano-graphite and nano-boron respectively and disperse them in ethanol by ultrasonic , remove the solvent, and fully dry to obtain dispersed nano-graphite and nano-boron. Mix the treated nano-graphite and nano-boron evenly under a high-energy ball mill. The ball m...

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Abstract

The invention discloses a preparation method of boron-doped nano polycrystalline diamond by taking nano graphite as a carbon source. The boron-doped nano polycrystalline diamond is synthesized by taking nano graphite and nano boron as raw materials in a domestic hinge type cubic press by an infiltration method. Compared with the traditional nano polycrystalline diamond prepared from nano diamond, the boron-doped nano polycrystalline diamond has the advantages of high hardness and high impact toughness, reduces the production cost and better conforms to the industrial production mode, and can be used as a new-generation high-precision cutting tool.

Description

technical field [0001] The patent of the present invention relates to the field of high-precision cutting abrasives, specifically a preparation method for the synthesis of boron-doped nano-polycrystalline diamond by infiltration method in a domestic hinged six-sided top press using nano-graphite and nano-boron as raw materials, mainly It is used in high-precision machining and cutting fields. Background technique [0002] Diamond is currently the most ideal cutting tool, but natural diamonds are difficult to mine and their reserves are scarce. Therefore, the commonly used diamonds are manufactured synthetically. Since the artificial diamond particles are too small to be directly used as cutting tools, they need to be sintered to form larger blocks before they can be used to make tools. People generally sinter diamond micropowder by powder sintering to prepare isotropic diamond polycrystals. , but the preparation of polycrystalline diamond needs to add sintering aids such as...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J3/06
CPCB01J3/062B01J3/067B01J2203/061B01J2203/0655
Inventor 李跃吴昊承刘宇龙栗正新
Owner HENAN UNIVERSITY OF TECHNOLOGY
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