High-performance rare earth alloy tungsten cutting wire

Abstract

The high-performance rare earth alloy tungsten cutting wire comprises a tungsten wire, the tungsten wire is made of a material synthesized by 99.75%-99.15% by weight of tungsten and 0.25%-0.85% by weight of rare earth, and the rare earth contains more than 99.99% by weight of lanthanum; the surface of the tungsten filament is provided with a plurality of tree-shaped pits, the surface of the tungsten filament and the tree-shaped pits are covered with a metal coating, and diamond particles are solidified on the surface of the metal coating. In the tungsten filament forming process, the tree-shaped concave resistance is formed in the surface of the tungsten filament, the tree-shaped concave resistance is easy to machine, and the binding force of a metal coating and the tungsten filament can be improved, so that the solidification quality of diamond particles is guaranteed, and the purpose of prolonging the service life of the cutting wire is achieved; the tungsten filament made of tungsten and lanthanum materials is adopted as a carrier, the tungsten filament can be pulled to form the tree-shaped pits, the manufactured tungsten filament has high tensile strength performance and high temperature resistance performance, silicon wafers can be cut more rapidly, and the slicing efficiency is improved.

Description

technical field [0001] The invention relates to a cutting wire, in particular to a high-performance rare earth alloy tungsten cutting wire. Background technique [0002] Since photovoltaic chip manufacturers have more aggressive requirements on the comprehensive yield rate of the chip, the broken wire rate in the process, and the single-pole wire consumption, in addition to the above indicators, customers require to increase the single-pole chip output rate to reduce production costs. At the same time, with the advancement of photovoltaic power generation technology, the size of silicon wafers has gradually changed from 158 μm to 210 μm, or even larger. At present, the field of cutting wire basically uses 92C or 100C wire as the carrier to prepare cutting wires of different specifications. Usually, the carbon steel busbar needs to go through large drawing→medium drawing→heat treatment→ISC→multi-pass drawing. Based on the above process, the busbar is prone to uneven diffusio...

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Problems solved by technology

However, the above-mentioned diamond wire saw etches the "dovetail" type pit on the surface of the busbar carrier, and impacts the nickel layer and the busbar to form a "dovetail" structure, which improves the bonding force between the plating layer and the busbar; however, the diameter of the busbar is only 10 um -40um, it is difficult to etch the "dovetail" type pit on the surface of the busbar carrier, and the processing quality is difficult to control, so the bonding force between the coating and the busbar is reduced, and the structural stability of the cutting line is poor

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