Direct induction heating device and heating method for wafer
A heating device and wafer technology, applied in the direction of induction heating device, ohmic resistance heating device, electric heating device, etc., can solve the problems of uncontrollable heating depth and slow heating speed, so as to avoid heating failure, reduce time, and improve section process Effect
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Embodiment 1
[0053] This embodiment provides a direct induction heating device for a wafer, see Figure 1 to Figure 2 , comprising an alternating magnetic flux generating component, using the alternating current of the alternating magnetic beam generating component to generate an alternating magnetic flux 9, the wafer 1 is placed in the alternating magnetic beam 9 generated by the alternating magnetic beam generating component, and the wafer placed in the alternating magnetic beam 9 1 generates an eddy current 10, and the eddy current 10 passes through the wafer 1 to generate Joule heat to heat the wafer 1.
[0054]Compared with the prior art, the direct induction heating device of the wafer provided in this embodiment adopts the direct induction heating method, and uses the alternating magnetic beam generating component to generate the alternating magnetic beam 9. Due to the existence of the induced current, it is placed in the alternating magnetic beam The wafer 1 in 9 will generate eddy...
Embodiment 2
[0078] This embodiment provides a method for direct induction heating of a wafer, comprising the following steps:
[0079] Using alternating current to generate alternating magnetic beams, placing the wafer in the alternating magnetic beams, eddy currents are generated in the wafers, and the eddy currents pass through the wafers to generate Joule heat to heat the wafers.
[0080] Compared with the prior art, the beneficial effects of the method for direct induction heating of wafers provided in this embodiment are basically the same as those of the device for direct induction heating of wafers provided in Embodiment 1, and will not be repeated here.
[0081] Specifically, due to the skin effect, the surface of the wafer will be heated intensively. By adjusting the frequency of the alternating magnetic beam 9, the penetration depth can be adjusted. The higher the frequency of the alternating current, the lower the penetration depth. Therefore, the above heating method also inclu...
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