Double-gate ferroelectric transistor, preparation method and data erasing and reading method

Abstract

The invention belongs to the technical field of transistors, and discloses a double-gate ferroelectric transistor, a preparation method and a data erasing and reading method.The double-gate ferroelectric transistor comprises a substrate and a channel, the channel is arranged above a lining body and located in the middle of the lining body, and a source electrode region and a drain electrode region are arranged on the two sides of the channel respectively; a source electrode is arranged on the source electrode region, a drain electrode is arranged on the drain electrode region, and an insulating layer, a lower gate electrode, a ferroelectric gate dielectric layer and an upper gate electrode are sequentially arranged above the channel from bottom to top. The dual-gate ferroelectric field transistor has the beneficial effects that the erasing process is realized by adding pulses between the upper gate electrode and the lower gate electrode, so that voltage is prevented from falling on the insulating layer; the breakdown of the insulating layer caused by an overlarge electric field on the insulating layer is avoided, and the anti-fatigue property of the transistor is improved; and voltage division of the insulating layer can be avoided, so that the programming and erasing voltage and the working voltage of the ferroelectric field effect transistor are reduced.

Description

technical field [0001] The invention relates to the technical field of transistors, in particular to a double-gate ferroelectric transistor, a preparation method and a data erasing and reading method. Background technique [0002] As a device for storing electronic system information, semiconductor memory is the core component to ensure the normal operation of the system, and its requirements are high storage density, fast writing speed, low power consumption, many rewritable times, and stable storage state. Among ferroelectric memories, ferroelectric field effect transistors (FeFETs) offer many distinct advantages, including non-volatile data storage, program / erase times in the nanosecond range, low operating voltages, virtually unlimited endurance, and lossless readout out. [0003] However, the anti-fatigue properties of ferroelectric field effect transistors based on HfO2 films are far behind traditional perovskite ferroelectric materials, which cannot meet the applicat...

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Problems solved by technology

[0003] However, there is a big gap in the anti-fatigue characteristics of ferroelectric field effect transistors based on HfO2 thin films compared with traditional perovskite ferroelectric materials, which cannot meet the application requirements of high-performance devices.

[0004] The traditional data erasing / reading method is to apply erasing / reading pulses on the source, drain and gate, so the insulating layer will withstand a higher electric field due to the small dielectric constant during pulse erasing, resulting in breakdown , so that the ferroelectric field effect transistor based on HfO2 thin film has limited fatigue times and poor fatigue resistance

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