Semiconductor optical amplifier chip

Abstract

The invention discloses a semiconductor optical amplifier chip which comprises a lower (N-face) electrode layer, a substrate, a buffer layer, a passive waveguide layer, a buried heterogeneous active region, a buried inclined waveguide layer, a cover layer and an upper (P-face) electrode layer which are sequentially stacked. The buried inclined waveguide layer comprises a strip-shaped inclined waveguide and a conical inclined waveguide, and the conical inclined waveguide is optically connected with the strip-shaped inclined waveguide. Due to the fact that the strip-shaped inclined waveguide and the conical inclined waveguide with the gradually-changed width in the buried inclined waveguide layer are arranged in an inclined mode and have a certain inclination angle, resonance of light waves in the semiconductor optical amplifier is avoided, and the light waves only generate one-way optical gain amplification in the semiconductor optical amplifier. The width of the tapered inclined waveguide is gradually changed, so that the tapered inclined waveguide has a relatively large transverse size at the end face of the chip, and the semiconductor optical amplifier and the optical fiber have relatively large mode field overlapping, thereby having relatively high coupling efficiency and alignment allowance.

Description

Technical field [0001] The present invention belongs to the field of semiconductor optoelectronic technology, in particular to a semiconductor optical amplifier chip. Background [0002] Semiconductor optical amplifier (SOA) is accompanied by the emergence of semiconductor lasers, it is very similar to semiconductor lasers in structure, there is no essential difference in the working principle, is the photon caused by stimulated radiation and amplified. The main difference between SOA and lasers is that SOA is used to amplify the photons of external inputs, usually with two ports of input and output, while semiconductor lasers are photons that amplify internal spontaneous radiation, and generally have only one output port. WITH THE CHARACTERISTICS OF MULTIPLE FUNCTIONS, SMALL SIZE, LOW COST, EASY INTEGRATION WITH OTHER OPTOELECTRONIC DEVICES, ETC. IT HAS A UNIQUE AND IMPORTANT ROLE IN OPTICAL SIGNAL AMPLIFICATION, OPTICAL SIGNAL PROCESSING AND OPTICAL SWITCHING APPLICATIONS, AND ...

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Problems solved by technology

[0003] In the prior art, SOA mostly adopts a wide contact structure. The waveguide generally adopts ridge waveguide or curved waveguide to reduce noise and optical feedback. There are problems such as low gain efficiency and poor quality of side beams. The optical fiber used in the field of optical communication is single-mode Optical fiber, the core diameter of single-mode fiber is only 5-10μm, while the size of the light-emitting surface of existing semiconductor optical amplifiers is much larger than the core diameter of single-mode fiber

Therefore, the difference in the size and shape of the eigenmode field between the SOA and the external fiber leads to a large mode mismatch between the two, the coupling efficiency between the two is extremely low, and the alignment tolerance is poor. Small

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