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Diamond wire and preparation method thereof

A technology of diamond wire and line speed, applied in the field of diamond wire and its preparation, can solve the problems of liquid carrying, chip removal, cooling effect reduction, etc., and achieve the effects of improving liquid carrying, reducing steel wire wear, and increasing specific surface area

Active Publication Date: 2022-05-31
LONGI GREEN ENERGY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, during the slicing process, due to the continuous increase in the size of the silicon wafer, the path of the steel wire passing through the silicon wafer continues to increase, resulting in a gradual decrease in the effective liquid carrying, chip removal, and cooling effects.

Method used

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  • Diamond wire and preparation method thereof
  • Diamond wire and preparation method thereof
  • Diamond wire and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0048] The application provides a method for preparing diamond wire, comprising the steps of:

[0049] Step 1: Provide steel wire substrate;

[0050] Step 2: forming a first nickel layer by electroplating on the surface of the steel wire substrate;

[0051] Step 3: forming a sandy nickel layer on the surface of the first nickel layer;

[0052] Step 4: forming a second nickel layer by electroplating on the surface of the sand nickel layer;

[0053] Step 5: forming a plurality of concave holes on the surface of the second nickel layer, thereby forming diamond wires;

[0054] Wherein, the opening diameter of the concave hole is 0.1-3 μm, and the depression depth thereof is 0.1-1 μm.

[0055] Specifically, the opening diameter of the concave hole may be 0.1 μm, 0.5 μm, 1 μm, 1.5 μm, 2 μm, 2.5 μm or 3 μm. The concave hole may have a depression depth of 0.1 μm, 0.2 μm, 0.3 μm, 0.4 μm, 0.5 μm, 0.6 μm, 0.7 μm, 0.8 μm, 0.9 μm or 1.0 μm.

[0056] Step 1 includes a pretreatment step...

Embodiment 1

[0087] The application provides a method for preparing diamond wire, comprising the steps of:

[0088] Step 1: Provide steel wire substrate;

[0089] The specific steps are as follows:

[0090] 1a: Alkali cleaning + ultrasonic: Under ultrasonic conditions, the temperature is controlled at about 60°C, and the oil on the surface of the steel wire substrate is cleaned with NaOH solution, and the cleaning time is 50 minutes. Thus completing the first cleaning.

[0091] 1b: Hot water washing + cold water washing: First use hot water at a temperature of about 60°C to clean the steel wire substrate after the first cleaning. The cleaning time is 10 minutes, and then place the cleaned steel wire substrate at a temperature of 25°C. Wash in cold water for 10 minutes to complete the second wash.

[0092] 1c: pickling: use sulfamic acid (pH value controlled at 2.5) to activate the surface of the steel wire substrate after the second cleaning, so as to complete the pickling and facilitat...

Embodiment 21

[0117] The difference between embodiment 21 and embodiment 3 is that step five, in step five of embodiment 21, uses chemical etching to form concave holes, specifically: soak the second nickel layer in a strong acid hot solution, so that The concave holes are formed on the surface of the second nickel layer. The take-up speed for forming the concave hole is 15% of the take-up speed for forming the second nickel layer. The take-up speed for forming the second nickel layer was 10 m / min. The take-up speed for forming the concave holes was 1.5 m / min. The strong acid solution is concentrated nitric acid with a volume percentage of 25-30%. The various parameters of the diamond wire are shown in Table 1.

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Abstract

A plurality of concave holes are formed in the peripheral surface of the diamond wire, the aperture of an opening of each concave hole ranges from 0.1 micrometer to 3 micrometers, and the concave depth of each concave hole ranges from 0.1 micrometer to 1 micrometer. According to the diamond wire, due to the fact that the concave holes are evenly distributed in the peripheral surface of the diamond wire, the specific surface area of the diamond wire can be increased, in the slicing process, the diamond wire can improve the liquid carrying effect, the chip removal effect and the cooling effect, and the diamond wire has the advantages of reducing wire breakage, reducing steel wire abrasion, reducing wire consumption and the like.

Description

technical field [0001] The present application relates to the technical field of photovoltaic equipment manufacturing, in particular to a diamond wire and a preparation method thereof. Background technique [0002] With the development of the photovoltaic industry, technological transformation, cost reduction, and green production have become part of the vitality of enterprises. The increase in the size of silicon wafers is a product of continuous selection in the market, and it is also an effective way to increase production capacity and reduce costs. However, during the slicing process, due to the continuous increase in the size of the silicon wafer, the path of the steel wire passing through the silicon wafer continues to increase, resulting in a gradual decrease in the effective liquid entrainment, chip removal, and cooling effects. Contents of the invention [0003] In view of the above problems, the present application proposes a diamond wire and a preparation metho...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/04B24B27/06C25D7/06C25D5/12C25D15/00
CPCB28D5/045B24B27/0633C25D7/06C25D5/12C25D5/605C25D15/00Y02P70/50
Inventor 刘晓东迪大明刘海涛
Owner LONGI GREEN ENERGY TECH CO LTD