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Preparation method of ceramic PTC thermistor material

A thermistor and ceramic technology, which is applied in the field of preparation of ceramic PTC thermistor materials, can solve the problems of speeding up the resistance temperature curve, disappearance of impact current, power attenuation, etc., and achieve high voltage breakdown resistance and resistance aging resistance , dense sintering, uniform grain effect

Active Publication Date: 2022-05-31
SHENZHEN JINKE SPECIAL MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For resistance aging, the most prominent problem at present is that after long-term power-on, the resistance increases a lot, the impact current disappears, and the power attenuation is serious, which affects the use of the product.
In general, increasing the temperature coefficient α can reduce the resistance aging rate, but the increase of the temperature coefficient α will accelerate the change of NTC in the latter part of the resistance-temperature curve Rmax, which will cause the PTC element to have a hidden danger of voltage breakdown

Method used

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  • Preparation method of ceramic PTC thermistor material
  • Preparation method of ceramic PTC thermistor material
  • Preparation method of ceramic PTC thermistor material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] Example 1, Curie point Tc220°C of PTC ceramic material:

[0067] First, the main raw material BaCO 3 , Pb 3 o 4 , CaCO 3 、TiO 2 Nb with two-component semiconducting agent 2 o 5 and Dy 2 o 3 According to (Ba 0.70 Pb 0.27 Ca 0.03 ) Ti 1.01 o 3 +0.0012Nb 2 o 5 +0.0003Dy 2 o 3 Calculate and weigh the molar ratio in the chemical formula, add deionized water to conduct a ball mill, in which material: ball: water = 1:1:1.5; dry and synthesize after 22 hours of wet ball milling, the synthesis temperature is 1150 ° C, and the synthesis time is 2.5 h, make a synthetic material.

[0068] In the above-mentioned primary synthesis material, the following raw materials are weighed and mixed according to the following ratio: MnO 2 : 0.10mol%, Al 2 o 3 : 1.3mol%, SiO 2 : 1.5mol%, BN: 0.3mol%, Sb 2 o 3 : 0.04mol%, Nd 2 o 3 : 0.01mol%, then add deionized water to carry out secondary ball milling, wherein material: ball: water = 1:1:0.8, after wet ball milling for ...

Embodiment 2

[0091] Example 2, Curie point Tc240°C of PTC ceramic material:

[0092] First, the main raw material BaCO 3 , Pb 3 o 4 , CaCO 3 、TiO 2 with two-component semiconducting agent Nb 2 o 5 and Dy 2 o 3 According to (Ba 0.66 Pb 0.31 Ca 0.03 ) Ti 1.01 o 3 +0.0013Nb 2 o 5 +0.0003Dy 2 o 3 Calculate and weigh the molar ratio in the chemical formula, add deionized water to conduct a ball mill, in which material: ball: water = 1:1:1.5; dry and synthesize after 22 hours of wet ball milling, the synthesis temperature is 1150 ° C, and the synthesis time is 2.5 h, make a synthetic material.

[0093] In the above-mentioned primary synthesis material, the following raw materials are weighed and mixed according to the following ratio: MnO 2 : 0.09mol%, Al 2 o 3 : 1.5mol%, SiO 2 : 1.5mol%, BN: 0.3mol%, Sb 2 o 3 : 0.04mol%, Ho 2 o 3 : 0.005mol%, Er 2 o 3 : 0.005mol%, ZnO: 0.001wt%, calculated and weighed and mixed, then added deionized water for secondary ball milling, i...

Embodiment 3

[0116] Embodiment 3, the Curie point Tc260 ℃ of PTC ceramic material

[0117] First, the main raw material BaCO 3 , Pb 3 o 4 , CaCO 3 、TiO 2 with two-component semiconducting agent Nb 2 o 5 and Dy 2 o 3 According to (Ba 0.62 Pb 0.35 Ca 0.03 ) Ti 1.01 o 3 +0.0014Nb 2 o 5 +0.0003Dy 2 o 3 Calculate and weigh the molar ratio in the chemical formula, add deionized water to conduct a ball mill, in which material: ball: water = 1:1:1.4; dry and synthesize after 22 hours of wet ball milling, the synthesis temperature is 1140 ° C, and the synthesis time is 2 hours , made into a primary compound.

[0118] In the above-mentioned primary synthesis material, the following raw materials are weighed and mixed according to the following ratio: MnO 2 : 0.08mol%, Al 2 o 3 : 1.75mol%, SiO 2 : 1.5mol%, Sb 2 o 3 : 0.04mol%, Sm 2 o 3 : 0.01mol%, calculated and weighed and mixed, then added deionized water for secondary ball milling, wherein material: ball: water = 1:1:0.8, ...

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Abstract

The invention relates to a preparation method of a ceramic PTC (Positive Temperature Coefficient) thermistor material, which is characterized in that the preparation of a primary synthetic material comprises the following steps: mixing BaCO3, Pb3O4, CaCO3 and TiO2 main raw materials with Nb2O5 and Dy2O3 double-component semiconducting agents, carrying out wet ball milling and drying, and then synthesizing; and secondary batching: mixing the primary synthetic material with a dopant, a sintering aid and the like, adding one or more compounds of Sb2O3, La2O3, Nd2O3, Sm2O3, Ho2O3 and Er2O3 to form a Curie peak broadening region regulator, and adjusting the introduction amount of the sintering aid, optimizing sintering process conditions and the like to obtain the Tc220-Tc260 DEG C high Curie point ceramic PTC material with a moderate temperature coefficient alpha and a large lift-drag ratio Rmax / Rmin. The ceramic PTC thermistor material obtained by the invention is uniform in crystal grain, compact in sintering, low in porosity, and relatively high in voltage breakdown resistance and resistance aging resistance.

Description

Technical field: [0001] The invention relates to a preparation method of a ceramic PTC thermistor material, which belongs to the technical field of electronic materials, in particular to the technical field of ceramic PTC thermistor material. Background technique: [0002] In terms of constant temperature heating applications, high-temperature PTC products have been widely used in many fields such as household air-conditioning auxiliary heaters, automotive air-conditioning auxiliary heaters, and hot air heating heaters. The performance requirements of applied products for PTC materials are increasing year by year, especially for air-conditioning auxiliary heating. The device is particularly prominent in improving the heat-resistant voltage performance of the component and solving the aging performance of the component resistance. For donor-doped BaTiO 3 For ceramics, its resistance temperature characteristic curve shows NTC effect at T<Tc and T>TRmax, and shows positi...

Claims

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Application Information

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IPC IPC(8): C04B35/468C04B35/622C04B35/64H01C7/02
CPCC04B35/468C04B35/622C04B35/64H01C7/023H01C7/025C04B2235/3224C04B2235/3251C04B2235/3294C04B2235/3227C04B2235/3217C04B2235/3418C04B2235/6562C04B2235/6567C04B2235/77C04B2235/78C04B2235/96C04B2235/386C04B2235/3284C04B2235/3267C04B2235/3215C04B2235/3296C04B2235/3208
Inventor 郜天宇郜天群龙晓琴曾金裕
Owner SHENZHEN JINKE SPECIAL MATERIALS CO LTD
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